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Autor:
Mitsuaki Honma, S. Hoshi, Mark Murin, T. Shimizu, T. Kawaai, Michio Nakagawa, K. Nagaba, K. Kanebako, K. Kanazawa, Y. Komatsu, Arik Eyal, Hiroshi Maejima, K. Imamiya, H. Tabata, Menahem Lasser, K. Iwasa, T. Shano, M. Kosakai, Mark Shlick, Noboru Shibata, Masaki Fujiu, Hiroto Nakai, A. Inoue, Katsuaki Isobe, S. Yoshikawa, Avraham Meir, T. Takahashi, N. Motohashi
Publikováno v:
IEEE Journal of Solid-State Circuits. 43:929-937
A 16 Gb 16-level-cell (16LC) NAND flash memory using 70 nm design rule has been developed . This 16LC NAND flash memory can store 4 bits in a cell which enabled double bit density comparing to 4-level-cell (4LC) NAND flash, and quadruple bit density