Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Arighna Basak"'
Autor:
Arighna Basak, Angsuman Sarkar
Publikováno v:
Optical Switching. :317-334
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::571679f7c4635d649a164567ffc971fb
https://doi.org/10.1002/9781119819264.ch16
https://doi.org/10.1002/9781119819264.ch16
Publikováno v:
2023 IEEE Devices for Integrated Circuit (DevIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7272c78676e5b4927f38427cc51ad02
https://doi.org/10.1109/devic57758.2023.10134836
https://doi.org/10.1109/devic57758.2023.10134836
Publikováno v:
2023 IEEE Devices for Integrated Circuit (DevIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::985d19a496d6bb907b2b0768a09dc3ac
https://doi.org/10.1109/devic57758.2023.10134835
https://doi.org/10.1109/devic57758.2023.10134835
Publikováno v:
Nanoelectronics : Physics, Materials and Devices ISBN: 9780323918329
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a532c163555598811913496abd5a37d
https://doi.org/10.1016/b978-0-323-91832-9.00017-8
https://doi.org/10.1016/b978-0-323-91832-9.00017-8
Autor:
Zahra Ahangari, Muhammed Ahosan Ul Karim, Navjeet Bagga, Writam Banerjee, Biswajit Baral, Ratul K. Baruah, Arighna Basak, Sriyanka Behera, Sekhar Bhattacharya, D.K. Bhattacharyya, Sudhansu Mohan Biswal, Avik Chakraborty, Manash Chanda, Joy Chowdhury, Jitendra Kumar Das, Sanghamitra Das, Shyamal K. Das, Gananath Dash, Taraprasanna Dash, Papiya Debnath, Arpan Deyasi, Shashank Kumar Dubey, Md Salim Equbal, Abhigyan Ganguly, Rupam Goswami, Richa Gupta, Anisul Haque, Hadi Heidari, N. Hoque, Aminul Islam, Raisul Islam, Devika Jena, Manasa Ranjan Jena, Chinmay Kumar Maiti, Eleena Mohapatra, Kamalakanta Mohapatra, Shamma Nasrin, Satya Ranjan Pattanaik, Vivek Raghuwanshi, Hafizur Rahman, Shubham Sahay, Angsuman Sarkar, Saheli Sarkhel, Nabin Sarmah, Ashok Kumar Sharma, Preeti Sharma, Rajnish Sharma, Santosh Sharma, Avtar Singh, Shree Prakash Tiwari, Rakesh Vaid, Zheng Wang
Publikováno v:
Nanoelectronics : Physics, Materials and Devices ISBN: 9780323918329
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c199005adc0e872d1db3b11981ba1bb
https://doi.org/10.1016/b978-0-323-91832-9.00022-1
https://doi.org/10.1016/b978-0-323-91832-9.00022-1
Publikováno v:
Nanoelectronics : Physics, Materials and Devices ISBN: 9780323918329
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b271e014710092bd392d12c75d43b93
https://doi.org/10.1016/b978-0-323-91832-9.00014-2
https://doi.org/10.1016/b978-0-323-91832-9.00014-2
Autor:
Arighna Basak, Angsuman Sarkar
Publikováno v:
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba8258ee8e7684a5c4901660dbeba427
https://doi.org/10.1109/edkcon56221.2022.10032874
https://doi.org/10.1109/edkcon56221.2022.10032874
Publikováno v:
Next Generation Smart Nano-Bio-Devices ISBN: 9789811971068
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dae1f9bceba314804b71169de7967b6c
https://doi.org/10.1007/978-981-19-7107-5_6
https://doi.org/10.1007/978-981-19-7107-5_6
Publikováno v:
Physica Scripta. 98:054003
The current manuscript for Asymmetric Junctionless Dual Material Double Gate MOSFET (AJDMDG MOSFET) biosensor reports improved sensitivity for both threshold voltage and ON-current. In the presence of high-K dielectric material, the device was built
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c297a11c5ec7c987891e7cfb7c0f5aa
https://doi.org/10.1088/1402-4896/accbf3
https://doi.org/10.1088/1402-4896/accbf3
Autor:
Arighna Basak, Angsuman Sarkar
Publikováno v:
Solid State Electronics Letters, Vol 2, Iss, Pp 117-123 (2020)
In this work, the impact of back gate work function on analog/RF performance of Asymmetric Junctionless Dual Material Double Gate MOSFET with high K gate Stack (AJDMDG Stack MOSFET) has been studied. The impact of back gate work function on analog/RF
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2b945ba1f892c723224dbec55ba9999a
https://doi.org/10.1016/j.ssel.2020.12.005
https://doi.org/10.1016/j.ssel.2020.12.005