Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Arghyadeep Sarkar"'
Autor:
ARGHYADEEP SARKAR, 亞吉安
104
Enhancement mode (E-Mode) GaN HEMT has recently started replacing conventional depletion mode devices due to additional safety in high power switching applications as it is always in normally off condition. Gate recess is one of the ways to
Enhancement mode (E-Mode) GaN HEMT has recently started replacing conventional depletion mode devices due to additional safety in high power switching applications as it is always in normally off condition. Gate recess is one of the ways to
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/u98njn
Autor:
Arghyadeep Sarkar, Yaser M. Haddara
Publikováno v:
Solid-State Electronics. 196:108420
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86f51ae3bf27b1b256bc2d726b097a49
https://doi.org/10.1016/j.sse.2022.108420
https://doi.org/10.1016/j.sse.2022.108420
The electrical and optical properties of One Dimension-Single Walled Boron Nitride Nanotube (1D-SWBNNT) doped with transition metal Iron are studied using the Quantum ATK. Highest direct bandgap obtained for S1 as 5.3167eV and S3 as 3.5328eV depicted
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86898af44bc33059024f6645a91dbddc
https://doi.org/10.21203/rs.3.rs-599265/v1
https://doi.org/10.21203/rs.3.rs-599265/v1
In this chapter, we present the analytical model of a gate-engineered dielectric modulated junctionless nanowire transistor to efficiently detect biomolecules electrically and in a label-free manner. The change in the threshold voltage of the device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfc7f916c468fcedc06106720ee47e1d
https://doi.org/10.1016/b978-0-323-85172-5.00008-3
https://doi.org/10.1016/b978-0-323-85172-5.00008-3
Autor:
J. Ajayan, S.S. Ashraf, Neeta Awasthy, Sandip Bag, S. Baskaran, Soumyadeepa Bhaumik, Shilpi Birla, Preethika Immaculate Britto, Avik Chakraborty, Joy Chowdhury, J.K. Das, Sourav Das, Ananya Dastidar, Ningthoujam Dinita Devi, Pijush Dutta, Souvik Ganguli, Karabi Ganguly, Anil Kumar Gautam, Pratik Ghosh, Vishnuvardhanan Govindaraj, Saumyadip Hazra, Satyaranjan Jena, Harsimran Jit Kaur, Kakarla Hari Kishore, P. Rama Krishna, Rajasree G. Krishnan, Kanak Kumar, Abhimanyu Kumar, Asok Kumar, Raushan Kumar, Rajesh Kumbhakar, Suman Lata Tripathi, Swanirbhar Majumder, A. Mohanbabu, Sushanta Kumar Mohapatra, Pallikonda Rajasekaran Murugan, V. Nikhila, Damodar Panigrahy, Monika Parmar, Rajesh Kumar Patjoshi, P.K. Patra, Shobhandeb Paul, T. Poongodi, S. Prithi, G. Boopathi Raja, Shasanka Sekhar Rout, Nirmal Kumar Rout, Pradeep Kumar Sahu, Sakthivel Sankaran, A. Santhy, Beena Saraswathyamma, M. Saravanan, Arghyadeep Sarkar, Angsuman Sarkar, Shubham Saxena, Tripurari Sharan, Aanchal Sharma, N.K. Shukla, Swati Sikdar, Sinam Ajitkumar Singh, Tejender Singh, Neha Singh, Sinam Ashinikumar Singh, Nagavarapu Sowmya, Tanya Srivastava, Yashonidhi Srivastava, D. Sumathi, P. Suresh, M. Swathi, Arunprasath Thiyagarajan, Sahil Virk, Rohit Yadav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3a66f606abc16c5850e21d7a007e840
https://doi.org/10.1016/b978-0-323-85172-5.01002-9
https://doi.org/10.1016/b978-0-323-85172-5.01002-9
Publikováno v:
2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS).
The impact of two different fin cross-sectional shape on the performance of Silicon junctionless bulk FinFET was investigated through TCAD simulations at different channel doping concentrations. Different electrical performance parameters have been e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c6686d99276627ee93ae2d12a73fb1f
https://doi.org/10.1109/vlsidcs47293.2020.9179912
https://doi.org/10.1109/vlsidcs47293.2020.9179912
Publikováno v:
Superlattices and Microstructures. 150:106753
Low-dimensional (LD) forms of HfO2, Al2O3, La2O3 and h-BN have been used as dielectric layer in the proposed MTJ memory device. Subsequently, DFT and NEGF model based atomistic computation were performed for the device using Quantum ESPRESSO. Self-co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4162a1db28a901b107bc55af158bc954
https://doi.org/10.1016/j.spmi.2020.106753
https://doi.org/10.1016/j.spmi.2020.106753
Autor:
Jawhara M. Karam, Ashley E. Mathew, Pooja D. Patel, Shika Veera, Nicole E. Cox, Matthew T. McDonald, Bhavya T. Thuremella, Kevin P. W. Smith, Pauline M. Good, Ramnik S. Gill, Niteesha Betini, Katy S. Vieira, Pratik Pradhan, Priyanka Shah, Shelby Jain, Esther J. Han, Mallika Kodavatiganti, Joy L. Little, Karima Rai, Arghyadeep Sarkar, Kevin C. Fitzpatrick, David Bollivar, Esha A. Gajjar, Matthew C. Erlich, Leila M. Haddad, Shivani Patel, Maanasa Natrajan, Justina Toma, Trinh Tran, Ravi K. Tata, Andrew M. Devaney, Clara R. White, Ritu R. Dalia, Vamsee K. Vemulapalli, Catherine E. MacDonald, Nirali Patel, Nishtha Gupta, Brianna M. Wong, Brenna K. Doyle, Andrew D. Jurgielewicz, Dharman Anandarajan, Shivangi D. Bhatt, Bela P. Delvadia, Lavanya S. Aluri, Anjali Ganguly, Arden O. Edgerton, Trevor V. Vidas, Tru A. Walor, Aishwary S. Desai, Gayathri Vijayakumar, Sinja J. Kriete, Andrew S. Jiang, Shu L. Zhao, Andrew Tawfik, Nusrat M. Nishu, Kaustav Patra, Susan M. R. Gurney, Devneet K. Kainth, Josh P. Maret, Swetha Chengalvala, Sprikena Nako
Publikováno v:
Genome Announcements
Mycobacteriophage Superphikiman is a cluster J bacteriophage which was isolated from soil collected in Philadelphia, PA. Superphikiman has a 109,799-bp genome with 239 predicted genes, including 2 tRNA genes.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4adc3d29c8557193051ea8084cd386e
http://europepmc.org/articles/PMC5794948
http://europepmc.org/articles/PMC5794948
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789811085840
Orthogonal Latin square (OLS) codes are one type of one-step majority logic decodable (OS-MLD) error correcting code. These codes provide fast and simple decoding procedure. The OLS codes are used for correcting multiple cell upsets (MCU) which occur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f6f66040ec95a7cef76ac083d56127d
https://doi.org/10.1007/978-981-10-8585-7_14
https://doi.org/10.1007/978-981-10-8585-7_14
Autor:
Sudhansu Kumar Pati, Sarosij Adak, Arghyadeep Sarkar, Chandan Kumar Sarkar, Sanjit Kumar Swain, Hemant Pardeshi
Publikováno v:
Superlattices and Microstructures. 75:347-357
In the present work, we propose and perform extensive simulation study of the novel device structure having a p-GaN back barrier layer inserted in the conventional AlInN/AlN/GaN Gate-Recessed Enhancement-Mode HEMT device for reducing the short channe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e945753ef74aadffe8e27752774e9d4
https://doi.org/10.1016/j.spmi.2014.07.036
https://doi.org/10.1016/j.spmi.2014.07.036