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pro vyhledávání: '"Arghya Singha Roy"'
Publikováno v:
IEEE Transactions on Electron Devices. 69:3163-3168
Publikováno v:
Japanese Journal of Applied Physics. 62:SC1040
High-speed write/read operation and low energy consumption along with a lower footprint are prerequisites for one transistor (1 T) embedded DRAM (eDRAM). This work evaluates the suitability of two different reconfigurable transistors (RFET) architect