Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Arghavan Salimi"'
Publikováno v:
RENEWABLE ENERGY
A thin intrinsic hydrogenated amorphous silicon carbide ((i) a-SiCx:H) layer with a wide band gap attracts attention as an alternative passivation layer instead of intrinsic hydrogenated amorphous silicon ((i) a-Si:H) for heterojunction photovoltaic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::73715d3b6043804ce6d7fe60be731696
https://doi.org/10.1016/j.renene.2021.11.065
https://doi.org/10.1016/j.renene.2021.11.065
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:1092-1104
In this work, the electrical and charge conduction characteristics of a contact structure featuring thermally evaporated MoOx, deposited on n- and p-type crystalline silicon (c-Si), are extensively investigated by room temperature current–voltage (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb0fe2b110700a77d9a20be6423c2dc3
https://doi.org/10.1007/s10854-020-04884-5
https://doi.org/10.1007/s10854-020-04884-5
Publikováno v:
2015 23rd Iranian Conference on Electrical Engineering.
Accurate and efficient diagnosis in a short time period is an important part of brain magnetic resonance imaging (MRI) classification. In this paper, we use multi-cluster feature selection (MCFS) method to select efficient features from the primary f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fcd635f6a4d4b7b23bb29670f80bffa
https://doi.org/10.1109/iraniancee.2015.7146189
https://doi.org/10.1109/iraniancee.2015.7146189