Zobrazeno 1 - 10
of 184
pro vyhledávání: '"Ares N"'
Autor:
Craig, D. L., Moon, H., Fedele, F., Lennon, D. T., Van Straaten, B., Vigneau, F., Camenzind, L. C., Zumbühl, D. M., Briggs, G. A. D., Osborne, M. A., Sejdinovic, D., Ares, N.
The discrepancies between reality and simulation impede the optimisation and scalability of solid-state quantum devices. Disorder induced by the unpredictable distribution of material defects is one of the major contributions to the reality gap. We b
Externí odkaz:
http://arxiv.org/abs/2111.11285
Autor:
Severin, B., Lennon, D. T., Camenzind, L. C., Vigneau, F., Fedele, F., Jirovec, D., Ballabio, A., Chrastina, D., Isella, G., de Kruijf, M., Carballido, M. J., Svab, S., Kuhlmann, A. V., Braakman, F. R., Geyer, S., Froning, F. N. M., Moon, H., Osborne, M. A., Sejdinovic, D., Katsaros, G., Zumbühl, D. M., Briggs, G. A. D., Ares, N.
The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, witho
Externí odkaz:
http://arxiv.org/abs/2107.12975
Autor:
Mergenthaler, M., Schupp, F. J., Nersisyan, A., Ares, N., Baumgartner, A., Schönenberger, C., Briggs, G. A. D., Leek, P. J., Laird, E. A.
A supercurrent transistor is a superconductor-semiconductor hybrid device in which the Josephson supercurrent is switched on and off using a gate voltage. While such devices have been studied using DC transport, radio-frequency measurements allow for
Externí odkaz:
http://arxiv.org/abs/2103.16256
Autor:
Nguyen, V., Orbell, S. B., Lennon, D. T., Moon, H., Vigneau, F., Camenzind, L. C., Yu, L., Zumbühl, D. M., Briggs, G. A. D., Osborne, M. A., Sejdinovic, D., Ares, N.
Deep reinforcement learning is an emerging machine learning approach which can teach a computer to learn from their actions and rewards similar to the way humans learn from experience. It offers many advantages in automating decision processes to nav
Externí odkaz:
http://arxiv.org/abs/2009.14825
Autor:
Pearson, A. N., Guryanova, Y., Erker, P., Laird, E. A., Briggs, G. A. D., Huber, M., Ares, N.
Publikováno v:
Phys. Rev. X 11, 021029 (2021)
All clocks, in some form or another, use the evolution of nature towards higher entropy states to quantify the passage of time. Due to the statistical nature of the second law and corresponding entropy flows, fluctuations fundamentally limit the perf
Externí odkaz:
http://arxiv.org/abs/2006.08670
Autor:
van Esbroeck, N. M., Lennon, D. T., Moon, H., Nguyen, V., Vigneau, F., Camenzind, L. C., Yu, L., Zumbühl, D. M., Briggs, G. A. D., Sejdinovic, D., Ares, N.
Quantum devices with a large number of gate electrodes allow for precise control of device parameters. This capability is hard to fully exploit due to the complex dependence of these parameters on applied gate voltages. We experimentally demonstrate
Externí odkaz:
http://arxiv.org/abs/2001.04409
Autor:
Moon, H., Lennon, D. T., Kirkpatrick, J., van Esbroeck, N. M., Camenzind, L. C., Yu, Liuqi, Vigneau, F., Zumbühl, D. M., Briggs, G. A. D., Osborne, M. A, Sejdinovic, D., Laird, E. A., Ares, N.
Device variability is a bottleneck for the scalability of semiconductor quantum devices. Increasing device control comes at the cost of a large parameter space that has to be explored in order to find the optimal operating conditions. We demonstrate
Externí odkaz:
http://arxiv.org/abs/2001.02589
Publikováno v:
Nature Physics volume 16, pages 75-82 (2020)
A single-electron transistor incorporated as part of a nanomechanical resonator represents an extreme limit of electron-phonon coupling. While it allows for fast and sensitive electromechanical measurements, it also introduces backaction forces from
Externí odkaz:
http://arxiv.org/abs/1903.04474
Publikováno v:
Sci. Rep. 10, 1654 (2020)
On-chip actuation and readout of mechanical motion is key to characterize mechanical resonators and exploit them for new applications. We capacitively couple a silicon nitride membrane to an off resonant radio-frequency cavity formed by a lumped elem
Externí odkaz:
http://arxiv.org/abs/1903.01423
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