Zobrazeno 1 - 10
of 89
pro vyhledávání: '"Arend M. Van Der Zande"'
Autor:
Jong-Young Lee, Jong Hun Kim, Yeonjoon Jung, June Chul Shin, Yangjin Lee, Kwanpyo Kim, Namwon Kim, Arend M. van der Zande, Jangyup Son, Gwan-Hyoung Lee
Publikováno v:
Communications Materials, Vol 2, Iss 1, Pp 1-10 (2021)
Desulfurization of MoS2 alters its chemical and physical properties by breaking structural symmetry. Here, the atomic-scale mechanistic pathway by which this occurs is investigated during plasma etching, and changes in chemical structure and physical
Externí odkaz:
https://doaj.org/article/ed299cd15c9141ce92bfacd76719fb4d
Autor:
Sihan Chen, Jangyup Son, Siyuan Huang, Kenji Watanabe, Takashi Taniguchi, Rashid Bashir, Arend M. van der Zande, William P. King
Publikováno v:
ACS Omega, Vol 6, Iss 5, Pp 4013-4021 (2021)
Externí odkaz:
https://doaj.org/article/a39728a6b13742d48aeb73657c8a259c
Autor:
Michael Taeyoung Hwang, Mohammad Heiranian, Yerim Kim, Seungyong You, Juyoung Leem, Amir Taqieddin, Vahid Faramarzi, Yuhang Jing, Insu Park, Arend M. van der Zande, Sungwoo Nam, Narayana R. Aluru, Rashid Bashir
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-11 (2020)
Field effect transistors based on graphene hold promise for sensing applications. Here, the authors report a millimeter-sized transistor based on deformed graphene as a biosensor that can detect nucleic acid molecules having detection limit of ~18 mo
Externí odkaz:
https://doaj.org/article/0a110dbfc3c94886aa1f75a27c37a285
Autor:
Jangyup Son, Junyoung Kwon, SunPhil Kim, Yinchuan Lv, Jaehyung Yu, Jong-Young Lee, Huije Ryu, Kenji Watanabe, Takashi Taniguchi, Rita Garrido-Menacho, Nadya Mason, Elif Ertekin, Pinshane Y. Huang, Gwan-Hyoung Lee, Arend M. van der Zande
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-9 (2018)
Fabrication methods to pattern thin materials are a critical tool to build molecular scale devices. Here the authors report a selective etching method using XeF2 gas to pattern graphene based heterostructures with multiple active layers and achieve 1
Externí odkaz:
https://doaj.org/article/9e00e5db8f0e48bf96f67c820d1c2ba7
Autor:
Jangyup Son, Junyoung Kwon, SunPhil Kim, Yinchuan Lv, Jaehyung Yu, Jong-Young Lee, Huije Ryu, Kenji Watanabe, Takashi Taniguchi, Rita Garrido-Menacho, Nadya Mason, Elif Ertekin, Pinshane Y. Huang, Gwan-Hyoung Lee, Arend M. van der Zande
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-1 (2018)
The original version of this Article contained an error in the second sentence of the second paragraph of the ‘Electrical properties of fluorinated graphene contacts’ section of the Results, which incorrectly read ‘The mobility was calculated b
Externí odkaz:
https://doaj.org/article/9675e54df30045d2bf6179117e19652b
Autor:
Gwan-Hyoung Lee, Chul-Ho Lee, Arend M. van der Zande, Minyong Han, Xu Cui, Ghidewon Arefe, Colin Nuckolls, Tony F. Heinz, James Hone, Philip Kim
Publikováno v:
APL Materials, Vol 2, Iss 9, Pp 092511-092511-7 (2014)
The two-dimensional limit of layered materials has recently been realized through the use of van der Waals (vdW) heterostructures composed of weakly interacting layers. In this paper, we describe two different classes of vdW heterostructures: inorgan
Externí odkaz:
https://doaj.org/article/d599e010ca9742348cf59bdb4b99e7e4
Autor:
Edmund Han, Shahriar Muhammad Nahid, Tawfiqur Rakib, Gillian Nolan, Paolo F. Ferrari, M. Abir Hossain, André Schleife, SungWoo Nam, Elif Ertekin, Arend M. van der Zande, Pinshane Y. Huang
Publikováno v:
ACS Nano. 17:7881-7888
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7751e0d02a03d59c76faf3fed3410e1c
https://doi.org/10.1021/acsnano.3c01311
https://doi.org/10.1021/acsnano.3c01311
Autor:
Prapti Kafle, Siyuan Huang, Kyung Sun Park, Fengjiao Zhang, Hao Yu, Caroline E. Kasprzak, Hyunchul Kim, Charles M. Schroeder, Arend M. van der Zande, Ying Diao
Publikováno v:
Langmuir. 38:6984-6995
Development of graphene-organic hybrid electronics is one of the most promising directions for next-generation electronic materials. However, it remains challenging to understand the graphene-organic semiconductor interactions right at the interface,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f3db1e051f4dfd67f77ad699c9a7c2e0
https://doi.org/10.1021/acs.langmuir.2c00570
https://doi.org/10.1021/acs.langmuir.2c00570
Autor:
Sihan Chen, Michael T. Hwang, Jiaojiao Wang, Anurup Ganguli, Insu Park, Yongdeok Kim, Enrique Valera, SungWoo Nam, Narayana R. Aluru, Arend M. Van Der Zande, Rashid Bashir
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::961b648ca084ae3b7d2570845bfd2163
https://doi.org/10.1109/iedm45625.2022.10019512
https://doi.org/10.1109/iedm45625.2022.10019512
Publikováno v:
Nano Letters. 21:8058-8065
A unique feature of two-dimensional (2D) materials is the ultralow friction at their van der Waals interfaces. A key question in a new generation of 2D heterostructure-based nanoelectromechanical systems (NEMS) is how the low friction interfaces will
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0835a207167ec9c63030d581802b6a12
https://doi.org/10.1021/acs.nanolett.1c02369
https://doi.org/10.1021/acs.nanolett.1c02369