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Autor:
Arenas, Mario Moreno, Arturo Torres-Sánchez, Pedro Rosales, Alfredo Morales, Alfonso Torres, Javier Flores, Luis Hernández, Carlos Zúñiga, Carlos Ascencio, Alba
Publikováno v:
Electronic Materials; Volume 4; Issue 3; Pages: 110-123
In this work, we report on the deposition of microcrystalline silicon (µc-Si:H) films produced from silane (SiH4), hydrogen (H2), and argon (Ar) mixtures using the plasma-enhanced chemical vapor deposition (PECVD) technique at 200 °C. Particularly,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=multidiscipl::30915f6ebd60cb0ba37d5d1dd3ffbacc
