Zobrazeno 1 - 10
of 3 064
pro vyhledávání: '"Arehart, A."'
Publikováno v:
In Resources, Conservation & Recycling July 2024 206
Autor:
D’Amico, Bernardino, Arehart, Jay H.
Publikováno v:
In Journal of Building Engineering 1 October 2024 94
Autor:
Christopher H. Arehart, John D. Sterrett, Rosanna L. Garris, Ruth E. Quispe-Pilco, Christopher R. Gignoux, Luke M. Evans, Maggie A. Stanislawski
Publikováno v:
mSystems, Vol 9, Iss 1 (2024)
ABSTRACTInflammatory bowel disease (IBD) is characterized by complex etiology and a disrupted colonic ecosystem. We provide a framework for the analysis of multi-omic data, which we apply to study the gut ecosystem in IBD. Specifically, we train and
Externí odkaz:
https://doaj.org/article/25f4da1db4b34af2973aca4ff183f560
Autor:
Kalarickal, Nidhin Kurian, Feng, Zixuan, Bhuiyan, A F M Anhar Uddin, Xia, Zhanbo, McGlone, Joe F., Moore, Wyatt, Arehart, Aaron R., Ringel, Steven A., Zhao, Hongping, Rajan, Siddharth
The performance of ultra-wide band gap materials like $\beta$-Ga$_\mathrm{2}$O$_\mathrm{3}$ is critically dependent on achieving high average electric fields within the active region of the device. In this report, we show that high-k gate dielectrics
Externí odkaz:
http://arxiv.org/abs/2006.02349
Autor:
Feng, Zixuan, Bhuiyan, A F M Anhar Uddin, Xia, Zhanbo, Moore, Wyatt, Chen, Zhaoying, McGlone, Joe F., Daughton, David R., Arehart, Aaron R., Ringel, Steven A., Rajan, Siddharth, Zhao, Hongping
A new record-high room temperature electron Hall mobility (${\mu}_{RT} = 194\space cm^{2}/V\space s$ at $n\sim 8\times 10^{15}\space cm^{-3}$) for ${\beta}$-Ga2O3 is demonstrated in the unintentionally doped thin film grown on (010) semi-insulating s
Externí odkaz:
http://arxiv.org/abs/2004.13089
Autor:
Hemant Ghadi, Joe F. McGlone, Evan Cornuelle, Alexander Senckowski, Shivam Sharma, Man Hoi Wong, Uttam Singisetti, Ymir Kalmann Frodason, Hartwin Peelaers, John L. Lyons, Joel B. Varley, Chris G. Van de Walle, Aaron Arehart, Steven A. Ringel
Publikováno v:
APL Materials, Vol 11, Iss 11, Pp 111110-111110-9 (2023)
The ability to achieve highly resistive beta-phase gallium oxide (β-Ga2O3) layers and substrates is critical for β-Ga2O3 high voltage and RF devices. To date, the most common approach involves doping with iron (Fe), which generates a moderately dee
Externí odkaz:
https://doaj.org/article/ebff1caf478145fab8f899b2351bdd6f
Autor:
Adolfo Correa, Annie Green Howard, Kari E North, Jerome I Rotter, Stephen S Rich, Ulrike Peters, Zhe Wang, Michael Y Tsai, Penny Gordon-Larsen, Christie Ballantyne, Shia T Kent, Ruth J F Loos, Christy L Avery, Xiuqing Guo, Jie Yao, Yao Hu, Mariaelisa Graff, Paul S de Vries, Keri L Monda, Moa P Lee, Sofia F Dimos, Laura M Raffield, Anna F Ballou, Carolina G Downie, Christopher H Arehart, Zhaohui Du, Christopher R Gignoux, Jeffrey Haessler, Helina Kassahun, J Antonio G Lopez, Michael H Preuss, Shannon L Rhodes, Rina Yarosh, Charles L Kooperberg
Publikováno v:
Open Heart, Vol 10, Iss 2 (2023)
Introduction The independent and causal cardiovascular disease risk factor lipoprotein(a) (Lp(a)) is elevated in >1.5 billion individuals worldwide, but studies have prioritised European populations.Methods Here, we examined how ancestrally diverse s
Externí odkaz:
https://doaj.org/article/1a269fc98b7043cc85c2bdef81e77451
Autor:
Xia, Zhanbo, Chandrasekar, Hareesh, Moore, Wyatt, Wang, Caiyu, Lee, Aidan, McGlone, Joe, Kalarickal, Nidhin Kurian, Arehart, Aaron, Ringel, Steven, Yang, Fengyuan, Rajan, Siddharth
Wide and ultra-wide band gap semiconductors can provide excellent performance due to their high energy band gap, which leads to breakdown electric fields that are more than an order of magnitude higher than conventional silicon electronics. In materi
Externí odkaz:
http://arxiv.org/abs/1911.02068
Autor:
Kalarickal, Nidhin Kurian, Xia, Zhanbo, Mcglone, Joe, Liu, Yumo, Moore, Wyatt, Arehart, Aaron, Ringel, Steve, Rajan, Siddharth
We report on the design and demonstration of ${\beta}-(Al_{0.18}Ga_{0.82})_2O_3/Ga_2O_3$ modulation doped heterostructures to achieve high sheet charge density. The use of a thin spacer layer between the Si delta-doping and heterojunction interface w
Externí odkaz:
http://arxiv.org/abs/1910.11521
Autor:
Kalarickal, Nidhin Kurian, Xia, Zhanbo, McGlone, Joe, Krishnamoorthy, Sriram, Moore, Wyatt, Brenner, Mark, Arehart, Aaron R., Ringel, Steven A., Rajan, Siddharth
We report on the origin of high Si flux observed during the use of Si as a doping source in plasma assisted MBE growth of \b{eta}-Ga2O3. We show on the basis of secondary ion mass spectroscopy (SIMS) analysis that Si flux is not limited by the vapor
Externí odkaz:
http://arxiv.org/abs/1908.01101