MÉTABOLISME ÉNERGÉTIQUE CELLULAIRE CHEZ DES RATS RECEVANT UN RÉGIME CONTAMINÉ PAR DU LINDANE

Autor: GRIFFATON, G., LOWY, R., ARDOUIN, B., DUPUY, F., PLUMAS, B.

Publikováno v: Annales de la nutrition et de l'alimentation, 1978 Jan 01. 32(1), 111-128.

Externí odkaz: https://www.jstor.org/stable/45123313

MÉTABOLISME LIPIDIQUE CHEZ LE RAT RECEVANT UN RÉGIME RICHE EN CERTAINS GLUCIDES: I. Résultats obtenus après injection I.P. de précurseurs lipogéniques

Autor: ROZEN, R., GRIFFATON, G., ARDOUIN, B., BRIGANT, L., LOWY, R., DUPUY, F., NAON, R.

Publikováno v: Annales de la nutrition et de l'alimentation, 1975 Jan 01. 29(2), 79-101.

Externí odkaz: https://www.jstor.org/stable/45124724

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A 300 GHz InP/GaAsSb/InP HBT for high data rate applications

Autor: Maher, H., Delmouly, V., Rouchy, U., Renvoise, M., Frijlink, P., Smith, D., Zaknoune, M., Ducatteau, D., Avramovic, V., Scavennec, A., Godin, J., Riet, M., cristell maneux, Ardouin, B.

Publikováno v: Conference Proceedings-International Conference on Indium Phosphide and Related Materials
Conference Proceedings-International Conference on Indium Phosphide and Related Materials, Dec 2011, Berlin, Germany. pp.Art n°68
Proceedings of 23rd International Conference on Indium Phosphide and Related Materials, IPRM 2011
23rd International Conference on Indium Phosphide and Related Materials, IPRM 2011
23rd International Conference on Indium Phosphide and Related Materials, IPRM 2011, 2011, Berlin, Germany. pp.1-4
Scopus-Elsevier

International audience; In this paper, a fully passivated InP/GaAsSb/InP DHBT on InP substrate with excellent DC and RF performance is developed. The epi-layers are grown by the MOCVD technique, with a base layer of 25nm and a collector layer of 130n

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::d94857a2fc201b366a2a5204f9bebd86
https://hal.archives-ouvertes.fr/hal-00671674

Compact Model Validation Strategies Based on Dedicated and Benchmark Circuit Blocks for the mm-Wave Frequency Range.

Autor: Ardouin, B., Schroter, M., Zimmer, T., Aufinger, K., Pfeiffer, U., Raya, C., Mukherjee, A., Malz, S., Fregonese, S., D'Esposito, R., De Matos, M.

Publikováno v: 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS); 2015, p1-4, 4p