Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Ardavan Niroomand"'
Autor:
Ziyang Wang, Mark John Maslow, Claire van Lare, Nadia Zuurbier, Andreas Frommhold, Rik Hoefnagels, Jo Finders, Eric Hendrickx, Zoi Dardani, Shih-Hsiang Liu, Scott L. Light, Ardavan Niroomand, Roberto Fallica, Willem van Mierlo, Dorothe Oorschot, Gijsbert Rispens
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XI.
In this paper we show experimental verification of the feasibility of printing pitch 40x70nm hexagonal holes using EUV single patterning. We show that at a local CDU (LCDU) of 2.7nm and an exposure dose of 54 mJ/cm2 a defect rate smaller than 7x10-9
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2019.
After an initial introduction into logic fabrication, EUV lithography is finally moving into memory fabrication, and now memory companies must untangle the complex physics required to create an aerial image with this next generation technology. The o
Autor:
Ardavan Niroomand, Ivan Pollentier, Dieter Van den Heuvel, Philippe Foubert, Kohei Hosokawa, Anne-Marie Goethals, Frieda Van Roey
Publikováno v:
Journal of Photopolymer Science and Technology. 25:559-567
Autor:
C. F. Lurusso, F. Van Roey, Fumio Iwamoto, R. Jockheere, Ardavan Niroomand, Alan Myers, A. M. Goethal, Kurt G. Ronse, N. Stepenenko, Insung Kim, Jan Hermans
Publikováno v:
Journal of Photopolymer Science and Technology. 20:383-392
IMEC has started an EUV lithography research program based on ASMLs EUV full field scanner, the Alpha Demo Tool (ADT). The intent of this program is to help improve and establish the necessary mask and resist infrastructure, and achieve learning to p
Autor:
Ardavan Niroomand, Peter Trefonas, Dan B. Millward, Dung Quach, Gurpreet S. Lugani, Valeriy V. Ginzburg, Scott L. Light, Phillip D. Hustad
Publikováno v:
Alternative Lithographic Technologies VII.
Block copolymer directed self-assembly (BCP-DSA) may provide a less costly method of forming sub-38nm pitch line-space patterns relative to proven HVM methods, but DSA needs to provide equivalent or improved defect density and pattern quality to warr
Autor:
Chris Maloney, Eric Hendrickx, Rik Jonckheere, Germain Fenger, Bruce W. Smith, Ardavan Niroomand, James Word, Gian Lorusso
Publikováno v:
SPIE Proceedings.
As EUV Lithography (EUVL) continues to evolve, it offers a possible solution to the problems of additional masks and lithography steps that drive up the cost and complexity of 193i multiple patterning. EUVL requires a non-telecentric reflective optic
Autor:
Shih-Wei Chang, Dan B. Millward, Phillip D. Hustad, Gurpreet S. Lugani, Scott L. Light, Ranjan Khurana, Ardavan Niroomand, Christopher Nam Lee, Peter Trefonas, Dung Quach
Publikováno v:
SPIE Proceedings.
Block co-polymer directed self-assembly (BCP DSA) has become an area of fervent research activity as a potential alternative or adjunct to EUV lithography or self-aligned pitch multiplication strategies. This presentation will evaluate two DSA strate
Publikováno v:
SPIE Proceedings.
Although extreme ultraviolet lithography (EUVL) remains a promising candidate for semiconductor device manufacturing of the 1x nm half pitch node and beyond, many technological burdens have to be overcome. The “field edge effect” in EUVL is one o
Autor:
David Laidler, Yongmei Chen, Jan Hermans, Huixiong Dai, Chris Ngai, Ming Mao, Philippe Leray, Ardavan Niroomand, Shaunee Cheng
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IV.
For device manufacturing at the 10nm node (N10) and below, EUV lithography is one of the technology options to achieve the required resolution. Besides high throughput and extreme resolution, excellent wafer CD, overlay and defect control are also re
Autor:
Jan Hermans, Gian Lorusso, Kurt G. Ronse, Rik Jonckheere, Eric Hendrickx, Anne-Marie Goethals, F. Van Roey, Bart Baudemprez, Ardavan Niroomand
Publikováno v:
SPIE Proceedings.
One of the main experimental setups for EUV lithography is the ASML EUV Alpha-Demo Tool (ADT), which achieves the first full-field EUV exposures at a wavelength of 13.6nm and a numerical aperture of 0.25. We report on the assessment of the baseline i