Zobrazeno 1 - 10
of 370
pro vyhledávání: '"Arciprete F"'
Autor:
Favaro, G., Amato, A., Arciprete, F., Bazzan, M., Cesarini, E., De Matteis, F., Dao, T. H., Granata, M., Honrado-Benítez, C., Gutiérrez-Luna, N., Larruquert, J. I., Lorenzin, G., Lumaca, D., Maggioni, G., Magnozzi, M., Placidi, E., Prosposito, P., Puosi, F.
In this work We report on the extensive characterization of amorphous silicon carbide (a-SiC) coatings prepared by physical deposition methods. We compare the results obtained on two different sputtering systems (a standard RF magnetron sputtering an
Externí odkaz:
http://arxiv.org/abs/2202.04458
Autor:
Diez, L. Herrera, Konuma, M., Placidi, E., Arciprete, F., Rushforth, A. W., Campion, R. P., Gallagher, B. L., Honolka, J., Kern, K.
We present the manipulation of magnetic and electrical properties of (Ga,Mn)As by the adsorption of dye-molecules as a first step towards the realization of light-controlled magnetic-semiconductor/dye hybrid devices. A significant lowering of the Cur
Externí odkaz:
http://arxiv.org/abs/1006.3174
Extensive Kerr microscopy studies reveal a strongly temperature dependent domain wall dynamics in Hall-bars made from compressively strained GaMnAs. Depending on the temperature magnetic charging of domain walls is observed and nucleation rates depen
Externí odkaz:
http://arxiv.org/abs/0908.4210
Autor:
Diez, L. Herrera, Kremer, R. K., Enders, A., Rössle, M., Arac, E., Honolka, J., Kern, K., Placidi, E., Arciprete, F.
Publikováno v:
Phys. Rev. B 78, 155310 (2008)
The domain wall induced reversal dynamics in compressively strained GaMnAs was studied employing the magneto-optical Kerr effect and Kerr microscopy. Due to the influence of an uniaxial part in the in-plane magnetic anisotropy (90+/-Delta) domain wal
Externí odkaz:
http://arxiv.org/abs/0805.2593
Mulheran and Blackman have provided a simple and clear explanation of the scale invariance of the island size distribution at the early stage of film growth [Phil. Mag. Lett. 72, 55 (1995)]. Their theory is centered on the concept of capture zone pro
Externí odkaz:
http://arxiv.org/abs/cond-mat/0610118
The two- to three-dimensional growth transition in the InAs/GaAs(001) heterostructure has been investigated by atomic force microscopy. The kinetics of the density of three dimensional quantum dots evidences two transition thresholds at 1.45 and 1.59
Externí odkaz:
http://arxiv.org/abs/cond-mat/0510353
Akademický článek
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Akademický článek
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Autor:
Tisbi E., Placidi E., Magri R., Prosposito P., Francini R., Zaganelli A., Cecchi S., Zallo E., Calarco R., Luna E., Honolka J., Vondracek M., Colonna S., Arciprete F.
Publikováno v:
Physical Review Applied 14 (2020). doi:10.1103/PhysRevApplied.14.014028
info:cnr-pdr/source/autori:Tisbi, E.; Placidi, E.; Magri, R.; Prosposito, P.; Francini, R.; Zaganelli, A.; Cecchi, S.; Zallo, E.; Calarco, R.; Luna, E.; Honolka, J.; Vondrá?ek, M.; Colonna, S.; Arciprete, F./titolo:Increasing Optical Efficiency in the Telecommunication Bands of Strain-Engineered Ga (As,Bi) Alloys/doi:10.1103%2FPhysRevApplied.14.014028/rivista:Physical Review Applied/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:14
info:cnr-pdr/source/autori:Tisbi, E.; Placidi, E.; Magri, R.; Prosposito, P.; Francini, R.; Zaganelli, A.; Cecchi, S.; Zallo, E.; Calarco, R.; Luna, E.; Honolka, J.; Vondrá?ek, M.; Colonna, S.; Arciprete, F./titolo:Increasing Optical Efficiency in the Telecommunication Bands of Strain-Engineered Ga (As,Bi) Alloys/doi:10.1103%2FPhysRevApplied.14.014028/rivista:Physical Review Applied/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:14
The search for semiconducting materials with improved optical properties relies on the possibility to manipulate the semiconductors band structure by using quantum confinement, strain effects, and by the addition of diluted amounts of impurity elemen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::487ecaf96007bfeac238ec1afaff856b