Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Archit Bhardwaj"'
Autor:
Prince Sharma, Archit Bhardwaj, Rahul Sharma, V. P. S. Awana, Tharangattu N. Narayanan, Karthik V. Raman, Mahesh Kumar
Publikováno v:
The Journal of Physical Chemistry C. 126:11138-11147
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d624d02084c1b88d39d98149e3555dd5
https://doi.org/10.1021/acs.jpcc.2c00767
https://doi.org/10.1021/acs.jpcc.2c00767
Autor:
Subramanian Mathimalar, Archit Bhardwaj, Biswarup Satpati, Saurabh Chaudhary, Satyaki Sasmal, Rajasekhar Pothala, Sekar Abhaya, Karthik V. Raman
Publikováno v:
npj Quantum Materials, Vol 5, Iss 1, Pp 1-6 (2020)
Proximity of a topological insulator (TI) surface with a magnetic insulator (MI) can open an exchange gap at the Dirac point leading to exploration of surface quantum anomalous Hall effect. An important requirement to observe the above effect is to p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee6150543dcdb9868b3b7b0b882248de
http://link.springer.com/article/10.1038/s41535-020-00267-5
http://link.springer.com/article/10.1038/s41535-020-00267-5
Planar Hall effect (PHE) in topological insulators (TIs) is discussed as an effect that stems mostly from conduction due to topologically protected surface states. Although surface states play a critical role and are of utmost importance in TIs, our
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::907cb6d23db888c96be41b9b5cad4707
http://arxiv.org/abs/2104.05246
http://arxiv.org/abs/2104.05246
Autor:
Satyaki Sasmal, Archit Bhardwaj, Janmey Jay Panda, Karthik V. Raman, Suman Mundlia, Saurabh Chaudhary, Lakshman Peri
Publikováno v:
Physical Review Applied. 14
Exchange-bias effect is a widely investigated topic for spintronic applications in magnetic data storage read heads and spin-valve sensors. This effect is observed in bilayers of magnetic materials comprising of a soft ferromagnet (FM) and an antifer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1f2367f93d55a8e0985031948d77022
https://doi.org/10.1103/physrevapplied.14.024095
https://doi.org/10.1103/physrevapplied.14.024095