Zobrazeno 1 - 10
of 1 126
pro vyhledávání: '"Arbiol, J."'
Autor:
Wuetz, B. Paquelet, Esposti, D. Degli, Zwerver, A. M. J., Amitonov, S. V., Botifoll, M., Arbiol, J., Sammak, A., Vandersypen, L. M. K., Russ, M., Scappucci, G.
Publikováno v:
Nature Communications, 14, 1385 (2023)
Charge noise in the host semiconductor degrades the performance of spin-qubits and poses an obstacle to control large quantum processors. However, it is challenging to engineer the heterogeneous material stack of gate-defined quantum dots to improve
Externí odkaz:
http://arxiv.org/abs/2209.07242
Autor:
Morante, J. R., Cornet, A., Peiró, F., Arbiol, J., Rossinyol, E., Brinzari, V., Korotcenkov, G., Golovanov, V.
Publikováno v:
Boletín de la Sociedad Española de Cerámica y Vidrio, Vol 43, Iss 2, Pp 510-513 (2004)
Nanostructural characteristics of polycrystalline SnO2 thin films determine their psychical and chemical properties as semiconductor gas sensor. Tin oxide thin films obtained by spray pyrolysis deposition on glass substrates have been studied (35nm -
Externí odkaz:
https://doaj.org/article/5cd3b6f2f43e42fbac4a9bef9bdee7f0
Autor:
Luo, Lu, Assali, Simone, Atalla, Mahmoud R. M., Koelling, Sebastian, Attiaoui, Anis, Daligou, Gérard, Martí, Sara, Arbiol, J., Moutanabbir, Oussama
Group IV Ge1-xSnx semiconductors hold the premise of enabling broadband silicon-integrated infrared optoelectronics due to their tunable bandgap energy and directness. Herein, we exploit these attributes along with the enhanced lattice strain relaxat
Externí odkaz:
http://arxiv.org/abs/2111.05994
Autor:
Vaitiekėnas, S., Whiticar, A. M., Deng, M. T., Krizek, F., Sestoft, J. E., Palmstrøm, C. J., Marti-Sanchez, S., Arbiol, J., Krogstrup, P., Casparis, L., Marcus, C. M.
Publikováno v:
Phys. Rev. Lett. 121, 147701 (2018)
We introduce selective area grown hybrid InAs/Al nanowires based on molecular beam epitaxy, allowing arbitrary semiconductor-superconductor networks containing loops and branches. Transport reveals a hard induced gap and unpoisoned 2e-periodic Coulom
Externí odkaz:
http://arxiv.org/abs/1802.04210
Autor:
Beeler, M., Lim, C. B., Hille, P., Bleuse, J., Schörmann, J., de la Mata, M., Arbiol, J., Eickhoff, M., Monroy, E.
Publikováno v:
Phys. Rev. B 91, 205440 (2015)
GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay times on the order of microseconds that persist up to room temperature. Doping the GaN nanodisk insertions with Ge can reduce these PL decay times by two orders of magnitude.
Externí odkaz:
http://arxiv.org/abs/1412.7720
Autor:
Merkoçi, F., Patarroyo, J., Russo, L., Piella, J., Genç, A., Arbiol, J., Bastús, N.G., Puntes, V.
Publikováno v:
In Materials Today Advances March 2020 5
Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by Germanium doping
Autor:
Hille, P., Müßener, J., Becker, P., de la Mata, M., Rosemann, N., Magén, C., Arbiol, J., Teubert, J., Chatterjee, S., Schörmann, J., Eickhoff, M.
Publikováno v:
Appl. Phys. Lett. 104, 102104 (2014)
We report on electrostatic screening of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures with Germanium-doped GaN nanodiscs embedded between AlN barriers. The incorporation of Germanium at concentrations above $10^{2
Externí odkaz:
http://arxiv.org/abs/1402.3081
Autor:
Furtmayr, F., Teubert, J., Becker, P., Conesa-Boj, S., Morante, J. R., Arbiol, J., Chernikov, A., Schäfer, S., Chatterjee, S., Eickhoff, M.
Publikováno v:
Phys. Rev. B 84, 205303 (2011)
The three dimensional carrier confinement in GaN nanodiscs embedded in GaN/AlGaN nanowires and its effect on their photoluminescence properties is analyzed for Al concentrations between x = 0.08 and 1. Structural analysis by high resolution transmiss
Externí odkaz:
http://arxiv.org/abs/1109.3394
Autor:
Zardo, I., Conesa-Boj, S., Peiro, F., Morante, J. R., Arbiol, J., Uccelli, E., Abstreiter, G., Morral, A. Fontcuberta i
Publikováno v:
Phys. Rev. B 80, 245324 (2009)
Polarization dependent Raman scattering experiments realized on single GaAs nanowires with different percentages of zinc-blende and wurtzite structure are presented. The selection rules for the special case of nanowires are found and discussed. In th
Externí odkaz:
http://arxiv.org/abs/0910.5266
Autor:
Spirkoska, D., Arbiol, J., Gustafsson, A., Conesa-Boj, S., Glas, F., Zardo, I., Heigoldt, M., Gass, M. H., Bleloch, A. L., Estrade, S., Kaniber, M., Rossler, J., Peiro, F., Morante, J. R., Samuelson, L., Abstreiter, G., Morral, A. Fontcuberta i
Publikováno v:
Phys. Rev. B 80, 245325 (2009)
The structural and optical properties of 3 different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal phases
Externí odkaz:
http://arxiv.org/abs/0907.1444