Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Aravindan Gurusamy"'
Autor:
Anbu Gopalakrishnan, Thiyagarajan Madhu, Aravindan Gurusamy, Srinivasan Manickam, Ramasamy Perumalsamy
Publikováno v:
Silicon. 15:2185-2197
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4309bc565474db6c040aea6b88c19312
https://doi.org/10.1007/s12633-022-02162-z
https://doi.org/10.1007/s12633-022-02162-z
Publikováno v:
Silicon.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e1157b0f6caa77a7093d384de9fa2c6
https://doi.org/10.1007/s12633-023-02350-5
https://doi.org/10.1007/s12633-023-02350-5
Publikováno v:
Silicon.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4e026f45082ae4836fdd008cd912e75
https://doi.org/10.1007/s12633-022-02259-5
https://doi.org/10.1007/s12633-022-02259-5
Autor:
Nagarajan Somi Ganesan, Ramasamy Perumalsamy, Sanmugavel Sundaramahalingam, Kesavan Venkatachalam, Aravindan Gurusamy
Publikováno v:
Silicon. 13:2569-2580
A two-dimensional, numerical simulation using finite volume method has been made on directional solidification of multi-crystalline silicon ingot. Two identical simulations have been carried out to grow silicon ingots in which one of them was maintai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5d7b7780290782e35b1e7b749986a3f
https://doi.org/10.1007/s12633-020-00604-0
https://doi.org/10.1007/s12633-020-00604-0
Publikováno v:
Journal of Crystal Growth. 592:126720
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00fb5c5833e0b02184c2e93053f15cb4
https://doi.org/10.1016/j.jcrysgro.2022.126720
https://doi.org/10.1016/j.jcrysgro.2022.126720
Autor:
S. G. Nagarajan, Manickam Srinivasan, S. Sanmugavel, V. Kesavan, Aravindan Gurusamy, P. Ramasamy
The boron doped multi-crystalline silicon (mc-Si) ingot was grown using the directional solidification process. Grown ingots were converted into bricks and then to wafers. We have fabricated silicon solar cells from the multi-crystalline silicon wafe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43ffaae98b0b5c53512509a615627e9f
https://doi.org/10.21203/rs.3.rs-248748/v1
https://doi.org/10.21203/rs.3.rs-248748/v1
Publikováno v:
Crystal Research and Technology. 56:2100018
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a270db33dba324b5f5d98b774d4dc9d2
https://doi.org/10.1002/crat.202100018
https://doi.org/10.1002/crat.202100018
Publikováno v:
Silicon. 10:1021-1033
A multi-crystalline silicon (mc-Si) ingot was grown by the directional solidification (DS) process for photovoltaic (PV) application. We have numerically investigated shear stress and thermal stress for different annealing time and temperature of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1963edbe485fa27b05688d4220874756
https://doi.org/10.1007/s12633-017-9565-6
https://doi.org/10.1007/s12633-017-9565-6