Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Arastoo Khalili"'
Autor:
Claudio Somaschini, Stefano Vichi, Patrick Rauter, Luca Esposito, Alexey V. Fedorov, Shiro Tsukamoto, Stefano Sanguinetti, Arastoo Khalili, Sergio Bietti, Federica Cappelluti, Matteo Costanzo
Publikováno v:
Nanotechnology (Bristol. Print) 31 (2020). doi:10.1088/1361-6528/ab7aa6
info:cnr-pdr/source/autori:Vichi S.; Bietti S.; Khalili A.; Costanzo M.; Cappelluti F.; Esposito L.; Somaschini C.; Fedorov A.; Tsukamoto S.; Rauter P.; Sanguinetti S./titolo:Droplet epitaxy quantum dot based infrared photodetectors/doi:10.1088%2F1361-6528%2Fab7aa6/rivista:Nanotechnology (Bristol. Print)/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:31
info:cnr-pdr/source/autori:Vichi S.; Bietti S.; Khalili A.; Costanzo M.; Cappelluti F.; Esposito L.; Somaschini C.; Fedorov A.; Tsukamoto S.; Rauter P.; Sanguinetti S./titolo:Droplet epitaxy quantum dot based infrared photodetectors/doi:10.1088%2F1361-6528%2Fab7aa6/rivista:Nanotechnology (Bristol. Print)/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:31
The fabrication and characterization of an infrared photodetector based on GaAs droplet epitaxy quantum dots embedded in Al0.3Ga0.7As barrier is reported. The high control over dot electronic properties and the high achievable number density allowed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::97b8611656afafef113047328330d9a2
http://hdl.handle.net/11583/2810621
http://hdl.handle.net/11583/2810621
Autor:
Gerard Bauhuis, Peter Mulder, Natasha Gruginskie, Alberto Tibaldi, Mircea Guina, G.M.M.W. Bissels, Arastoo Khalili, Federica Cappelluti, Elias Vlieg, Timo Aho, John J. Schermer, Antti Tukiainen, Farid Elsehrawy, M.G.R. van Eerden
Publikováno v:
Lecture Notes in Nanoscale Science and Technology
Lecture Notes in Nanoscale Science and Technology-Quantum Dot Optoelectronic Devices
Quantum Dot Optoelectronic Devices ISBN: 9783030358129
Quantum Dot Optoelectronic Devices
Lecture Notes in Nanoscale Science and Technology-Quantum Dot Optoelectronic Devices
Quantum Dot Optoelectronic Devices ISBN: 9783030358129
Quantum Dot Optoelectronic Devices
In this work, we report our recent results in the development of thin-film III–V solar cells fabricated by epitaxial lift-off (ELO) combining quantum dots (QD) and light management structures. Possible paths to overcome two of the most relevant iss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fe084a70ab84d8171850e908fd3e67a8
https://trepo.tuni.fi/handle/10024/140101
https://trepo.tuni.fi/handle/10024/140101
Autor:
Arastoo Khalili, Federica Cappelluti
Publikováno v:
2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).
Novel solar cell concepts relying on the use of nanostructures requires ad hoc device modeling tools able to cope with carrier transport and charge transfer mechanisms involving the host bulk material and the quantum confined states. In this work we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::395f4417b195495f5ae4d295c3573f2d
https://doi.org/10.1109/nusod.2018.8570264
https://doi.org/10.1109/nusod.2018.8570264
Autor:
Federica Cappelluti, M. Tang, Jiang Wu, Alberto Tibaldi, Dongyoung Kim, Arastoo Khalili, Huiyun Liu, Ariel Pablo Cedola
Publikováno v:
International Journal of Photoenergy
(2018).
info:cnr-pdr/source/autori:Ariel Cedola; Dongyoung Kim; Alberto Tibaldi; Mingchu Tang; Arastoo Khalili; Jiang Wu; Huiyun Liu; Federica Cappelluti/titolo:Physics-based modeling and experimental study of Si-doped InAs%2FGaAs quantum dot solar cells/doi:/rivista:International Journal of Photoenergy (Print)/anno:2018/pagina_da:/pagina_a:/intervallo_pagine:/volume
International Journal of Photoenergy, Vol 2018 (2018)
(2018).
info:cnr-pdr/source/autori:Ariel Cedola; Dongyoung Kim; Alberto Tibaldi; Mingchu Tang; Arastoo Khalili; Jiang Wu; Huiyun Liu; Federica Cappelluti/titolo:Physics-based modeling and experimental study of Si-doped InAs%2FGaAs quantum dot solar cells/doi:/rivista:International Journal of Photoenergy (Print)/anno:2018/pagina_da:/pagina_a:/intervallo_pagine:/volume
International Journal of Photoenergy, Vol 2018 (2018)
This paper presents an experimental and theoretical study on the impact of doping and recombination mechanisms on quantum dot solar cells based on the InAs/GaAs system. Numerical simulations are built on a hybrid approach that includes the quantum fe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ef32e1d436ac49079fcb6951687cfd01
Autor:
Huiyun Liu, Federica Cappelluti, Mircea Guina, Jiang Wu, Peter Mulder, Farid Elsehrawy, Ariel Pablo Cedola, Timo Aho, Gerard Bauhuis, G.M.M.W. Bissels, J.J. Schermer, Tapio Niemi, Arastoo Khalili, Dongyoung Kim
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), June 25-30, 2017, Washington DC, 1189-1192. New York : IEEE
STARTPAGE=1189;ENDPAGE=1192;TITLE=2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), June 25-30, 2017, Washington DC
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), June 25-30, 2017, Washington DC, pp. 1189-1192
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)
STARTPAGE=1189;ENDPAGE=1192;TITLE=2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), June 25-30, 2017, Washington DC
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), June 25-30, 2017, Washington DC, pp. 1189-1192
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)
We report thin-film InAs/GaAs QD solar cells fabricated by epitaxial lift-off of 3-inch wafers containing QD epi-structures with high in-plane QD density. External quantum efficiency measurements demonstrate enhanced QD harvesting in the thin-film co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::75b21c30c2a30ed1b85e068dcbfc8d3d
https://hdl.handle.net/2066/246084
https://hdl.handle.net/2066/246084
The authors present a numerical study on the influence of wetting layer states and doping on the photovoltage loss of InAs/GaAs quantum dot solar cells. Quantum-mechanical simulations are used to analyse how the reduction of wetting layer by Al(Ga)As
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f1ea9ff6d3ac190e74733b4ce85e9e1d
http://hdl.handle.net/11583/2655933
http://hdl.handle.net/11583/2655933
Publikováno v:
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).
We present an extensive study of the influence of selective doping on the behavior of quantum dot solar cells, considering both modulation and direct doping approaches. A combined analysis of photoluminescence and photovoltaic behavior at short-circu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d8c2144be0575595b0217f7dd1031e5
https://doi.org/10.1109/iciprm.2016.7528628
https://doi.org/10.1109/iciprm.2016.7528628
Publikováno v:
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)
We study InAs/GaAs quantum dot solar cells exploiting light trapping approaches to enhance the interband light harvesting efficiency of quantum dots. A realistic thin-film structure including a nanostructured anti-reflection coating and a planar refl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d32a674bd34bf6dbe33bd0dc10f8ad2
https://doi.org/10.1109/iciprm.2016.7528629
https://doi.org/10.1109/iciprm.2016.7528629
Publikováno v:
Solar Energy Materials and Solar Cells. :209-220
We investigate the effect of doping on quantum dot (QD) solar cells by analysing their behavior in terms of photovoltaic characteristic, external quantum efficiency, and photoluminescence (PL) at room temperature. The analysis addresses the two most
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f886d7c37e20f979e708e8402025890d