Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Arash Salahvarzi"'
Autor:
Arash Salahvarzi, Mohsen Khosroanjam, Amir Mahdi Hosseini Monazzah, Hakem Beitollahi, Umit Y. Ogras, Mahdi Fazeli
Publikováno v:
IEEE Transactions on Emerging Topics in Computing. 11:43-55
Publikováno v:
IEEE Transactions on Computers. 70:414-427
The stochastic switching feature of Spin-Transfer Torque Magnetic RAM (STT-MRAM) provides an attractive knob to trade quality for energy consumption in approximate computing applications. Indeed, the quality of STT-MRAM functionalities (mainly write
Publikováno v:
IEEE Transactions on Computers. :1-1
STT-MRAM is regarded as an extremely promising NVM technology for replacing SRAM-based on-chip memories. While STT-MRAM memories benefit from ultra-low leakage power and high density, they suffer from some reliability challenges, namely, read disturb