Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Ararat Khachatryan"'
Publikováno v:
2019 IEEE 39th International Conference on Electronics and Nanotechnology (ELNANO).
In applications with high voltage inputs traditional circuits of sense amplifiers can't achieve required speeds. An approach of stable Conventional Voltage Mode Sense Amplifier is presented. Both existing and new approaches have been used to fix the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a26f3b98bc61c2864115fdb39bfc2f7
https://doi.org/10.1109/elnano.2019.8783427
https://doi.org/10.1109/elnano.2019.8783427
Autor:
Ararat Khachatryan
Publikováno v:
EWDTS
From year to year there are lot of new requirements regarding to the lifetime and reliability of integrated circuits (IC) especially in automotive applications. In align with technology scaling the amount of device's reliability issues are increasing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bba2f51ca80bb9c6330bfee667a2e521
https://doi.org/10.1109/ewdts.2017.8110097
https://doi.org/10.1109/ewdts.2017.8110097
Autor:
Ararat Khachatryan
Publikováno v:
EWDTS
In this paper is presented characterization and modeling of the self-heating effect (SHE) for multifinger MOSFET transistors. The mechanism of self heating effect has been analyzed based on simulator which supporting 2D device model. By using Verilog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cd529dcabf9439c031f528317f4488c
https://doi.org/10.1109/ewdts.2017.8110098
https://doi.org/10.1109/ewdts.2017.8110098
Autor:
Davit Mirzoyan, Ararat Khachatryan
Publikováno v:
EWDTS
A novel process corner detection circuit has been proposed in current work. The circuit uses only metal-oxide-semiconductor (MOS) transistors to precisely detect process corner. Such approach allows reducing circuit's area and current consumption. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba8793a725e50679d63a94bc69d2601e
https://doi.org/10.1109/ewdts.2016.7807725
https://doi.org/10.1109/ewdts.2016.7807725
Autor:
Ararat Khachatryan, Davit Mirzoyan
Publikováno v:
EWDTS
Modern VLSI designs experience significant temperature change due to variations in workload and ambient conditions. The change in temperature can cause variation in other performance parameters such as power and reliability. Modern chips use complex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a774f11acad268340d4a528d7df4230
https://doi.org/10.1109/ewdts.2016.7807715
https://doi.org/10.1109/ewdts.2016.7807715
Autor:
Davit Mirzoyan, Ararat Khachatryan
Publikováno v:
ISVLSI
A new process variation monitoring circuit (PVMC) has been proposed in the paper. The goal is to generate a digital signal/code which (code value) will characterize the process corner. The circuit uses only metal-oxide-semiconductor (MOS) transistors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a809a3ad1961fd560c8dc953b47b8079
https://doi.org/10.1109/isvlsi.2016.26
https://doi.org/10.1109/isvlsi.2016.26
Publikováno v:
2016 IEEE 36th International Conference on Electronics and Nanotechnology (ELNANO).
A novel approach for process variation detection (PVD) is proposed. Named "dynamic measurement", the proposed method is able to detect process corner type. Information on process variability is represented in digital signal (code). Use of such approa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::304abfcddf1a3c4438606b2e5a1ff6f1
https://doi.org/10.1109/elnano.2016.7493088
https://doi.org/10.1109/elnano.2016.7493088
Publikováno v:
2016 IEEE 36th International Conference on Electronics and Nanotechnology (ELNANO).
In this paper a new approach for on chip compensation of resistor value which can change due to process and temperature variations is presented. There is a special circuit which generates three bits for compensation corresponding to the variation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6326cd0b8f181a4c9fa027db5b832f2f
https://doi.org/10.1109/elnano.2016.7493089
https://doi.org/10.1109/elnano.2016.7493089
Publikováno v:
EWDTS
This paper addresses a new approach for low jitter, low power phase locked loop design. Effects of process-voltage-temperature variation on PLL are studied. A self compensating PLL solution using process-voltage-temperature variation effects compensa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f844362ffe70601ba9874b449e8e5ea
https://doi.org/10.1109/ewdts.2013.6673187
https://doi.org/10.1109/ewdts.2013.6673187