Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Aranya Goswami"'
Autor:
Brian Markman, Simone Tommaso Suran Brunelli, Aranya Goswami, Matthew Guidry, Mark J. W. Rodwell
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 930-934 (2020)
In0.53Ga0.47As/InAs composite channel MOS-HEMT exhibiting peak fτ = 511 GHz and peak fmax = 285 GHz is demonstrated. Additionally, another device exhibiting peak fτ = 286 GHz and peak fmax = 460 GHz is reported. The devices have a 1 nm / 3 nm AlxOy
Externí odkaz:
https://doaj.org/article/fd3b191274754695beecbd4aa67f475b
Autor:
Aidan A. Taylor, Bei Shi, Aranya Goswami, Jonathan Klamkin, Chris Palmstrom, Simone Tommaso Suran Brunelli
Publikováno v:
Crystal Growth & Design. 20:7761-7770
Heteroepitaxy of III–V compound semiconductors on silicon (Si) or silicon-on-insulator (SOI) substrates is of great interest for photonics and electronics applications. In this work, antiphase-boun...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77f7aa17cdc6caddde0846fca9a158aa
https://doi.org/10.1021/acs.cgd.0c00988
https://doi.org/10.1021/acs.cgd.0c00988
Autor:
Simone Tommaso Suran Brunelli, Aranya Goswami, Matthew Guidry, Mark J. W. Rodwell, Brian Markman
Publikováno v:
IEEE Journal of the Electron Devices Society. 8:930-934
An In 0.53 Ga 0.47 As/InAs composite channel MOS-HEMT exhibiting peak $f_{\tau } = 511$ GHz and peak ${f} _{\max }= 285$ GHz is demonstrated. Additionally, another device exhibiting peak $f_{\tau } = 286$ GHz and peak ${f} _{\max }= 460$ GHz is repor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0797494a254c95f1b5f804ece0fddab
https://doi.org/10.1109/jeds.2020.3017141
https://doi.org/10.1109/jeds.2020.3017141
Autor:
Jonathan Klamkin, Aranya Goswami, Hsin-Ying Tseng, Simone Tommaso Suran Brunelli, Mark J. W. Rodwell, Brian Markman, Chris Palmstrom
Publikováno v:
Crystal Growth & Design. 19:7030-7035
We report on the successful integration of multiple atomically thin horizontal heterojunctions (HJs) epitaxially grown via metal organic chemical vapor deposition inside a confined template of diel...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d5f0651c74296e8969e3caad88d4dd1
https://doi.org/10.1021/acs.cgd.9b00843
https://doi.org/10.1021/acs.cgd.9b00843
Autor:
Chris Palmstrom, Aranya Goswami, Jonathan Klamkin, Kunal Mukherjee, Hsin-Ying Tseng, Brian Markman, Simone Tommaso Suran Brunelli, Aidan A. Taylor, Mark J. W. Rodwell
Publikováno v:
Physical Review Materials. 4
The selective area growth technique, confined epitaxial lateral overgrowth (CELO), enables the growth of lateral III-V heterojunctions integrated on mismatched substrates. In CELO, effective control of facet shapes, as well as defect-free growths are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01c08aa3a7392a51a0a707eac71d30a4
https://doi.org/10.1103/physrevmaterials.4.123403
https://doi.org/10.1103/physrevmaterials.4.123403
Autor:
Chris Palmstrom, Aranya Goswami, Michael Seas, David P. Pappas, Ruichen Zhao, Corey Rae McRae, Anthony P. McFadden
Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III–V semiconductor/Al structures are grown by molecular beam epitaxy on III–V semicond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::67dc620f8338ef79b585b28869942e50
Autor:
Shouvik Chatterjee, Felipe Crasto de Lima, John A. Logan, Yuan Fang, Hadass Inbar, Aranya Goswami, Connor Dempsey, Jason Dong, Shoaib Khalid, Tobias Brown-Heft, Yu-Hao Chang, Taozhi Guo, Daniel J. Pennachio, Nathaniel Wilson, Shalinee Chikara, Alexey Suslov, Alexei V. Fedorov, Dan Read, Jennifer Cano, Anderson Janotti, Christopher J. Palmstrøm
Publikováno v:
Physical Review Materials, vol 5, iss 12
Topological materials often exhibit remarkably linear, non-saturating magnetoresistance (LMR), which is both of scientific and technological importance. However, the role of topologically non-trivial states in the emergence of such a behaviour has el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2faec490ae011de33858f58643764972
Autor:
Chris Palmstrom, Alexei V. Fedorov, Shouvik Chatterjee, Shoaib Khalid, Elliot Young, Taozhi Guo, Aranya Goswami, Hadass Inbar, Yu-Hao Chang, Anderson Janotti, Daniel Read
Publikováno v:
Science advances, vol 7, iss 16
Science Advances
Science Advances
Controlling the electronic properties via bandstructure engineering is at the heart of modern semiconductor devices. Here, we extend this concept to semimetals where, utilizing LuSb as a model system, we show that quantum confinement lifts carrier co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1bb201c055c30904d79dfd1dff34e6db
Autor:
Chris Palmstrom, Brian Markman, Mark J. W. Rodwell, Aranya Goswami, Shouvik Chatterjee, Simone Tommaso Suran Brunelli, Jonathan Klamkin
Publikováno v:
Journal of Applied Physics. 130:085302
Template-assisted selective area growth techniques have gained popularity for their ability to grow epitaxial materials in prefabricated dielectric templates. Confined epitaxial lateral overgrowth (CELO) is one such technique that uses dielectric tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::613e6d787cf411c644ef4a5bc0273f77
https://doi.org/10.1063/5.0050802
https://doi.org/10.1063/5.0050802
Autor:
Felipe Crasto de Lima, Tobias Brown-Heft, Shouvik Chatterjee, Abhishek Sharan, Shoaib Khalid, Yu-Hao Chang, Fernando P. Sabino, Aranya Goswami, Hadass Inbar, Anderson Janotti, Chris Palmstrom, Daniel Read, Alexei V. Fedorov
Publikováno v:
Physical Review B, vol 99, iss 12
Observation of large non-saturating magnetoresistance in rare-earth monopnictides has raised enormous interest in understanding the role of its electronic structure. Here, by a combination of molecular-beam epitaxy, low-temperature transport, angle-r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a1364ab1950dc2cef1c867da3079b21
https://escholarship.org/uc/item/97b3n2zr
https://escholarship.org/uc/item/97b3n2zr