Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Arantxa Maestre Caro"'
Autor:
Gustaaf Borghs, Guido Maes, Caroline Whelan, Olivier Richard, Arantxa Maestre Caro, Silvia Armini, Youssef Travaly
Publikováno v:
Advanced Functional Materials. 20:1125-1131
A 3-aminopropyltrimethoxysilane-derived self-assembled monolayer (NH 2 SAM) is investigated as a barrier against copper diffusion for application in back-end-of-line (BEOL) technology. The essential characteristics studied include thermal stability t
Autor:
Jessica M. Torres, David J. Michalak, Arantxa Maestre Caro, Christopher J. Jezewski, James S. Clarke, Christopher B. George
Publikováno v:
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.
The RC delay and power restrictions imposed by the interconnect system can contribute to poor circuit performance in an increasingly severe manner as dimensions shrink. Resistances are increasing faster than the scale factor of the technology and cap
Autor:
Zakaria Moktadir, Jun Ogi, Shunri Oda, Yoshishige Tsuchiya, Hiroshi Mizuta, Vladimir Cherman, Silvia Armini, Mohammad Adel Ghiass, Arantxa Maestre Caro, Marta Carli
The effects of suspension and functionalisation on electrical conduction of silicon nanowires (SiNWs) are experimentally investigated towards highly sensitive chemical and biological detection applications. The conductance is found to be affected by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c05b780785feafa6359a9e42ced50f9
http://hdl.handle.net/11577/2836602
http://hdl.handle.net/11577/2836602
Autor:
Silvia Armini, Arantxa Maestre Caro, Gerald Beyer, Zsolt Tőkei, Larry Zhao, Guido Maes, Gustaaf Borghs, Youssef Travaly
Publikováno v:
MRS Proceedings. 1249
The trend for future integrated circuits (IC) is decreasing in size beyond the conventional limits. The recent transition from aluminum to copper as the interconnect material for IC is due to copper's higher resistance to electromigration and its low
Publikováno v:
2007 Digest of papers Microprocesses and Nanotechnology.
This paper investigates a selective self-assembly process for formation of a self-assembled monolayers (SAM) barrier to Cu diffusion in dual damascene integration. In selecting a barrier, trichlorosilanes are promising due to their high thermal stabi