Výsledky vyhledávání - "Arango, Isabel C"

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Quantification of spin-charge interconversion in highly resistive sputtered Bi$_x$Se$_{1-x}$ with non-local spin valves

Autor: Arango, Isabel C., Choi, Won Young, Pham, Van Tuong, Groen, Inge, Vaz, Diogo C., Debashis, Punyashloka, Li, Hai, DC, Mahendra, Oguz, Kaan, Chuvilin, Andrey, Hueso, Luis E., Young, Ian A., Casanova, Fèlix

Publikováno v: Physical Review B 108, 104425 (2023)

The development of spin-orbitronic devices, such as magneto-electric spin-orbit logic devices, calls for materials with a high resistivity and a high spin-charge interconversion efficiency. One of the most promising candidates in this regard is sputt

Externí odkaz: http://arxiv.org/abs/2311.03598

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Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices

With the deceleration of dimensional and voltage scaling in CMOS technologies, the demand for novel logic devices has never been greater. While spin-based devices present a major opportunity towards favorable scaling, switching energies are still ord

Externí odkaz: http://arxiv.org/abs/2302.12162

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Spin-to-charge conversion by spin pumping in sputtered polycrystalline Bi$_x$Se$_{1-x}$

Autor: Arango, Isabel C, Anadón, Alberto, Novoa, Silvestre, Pham, Van Tuong, Choi, Won Young, Alegre, Junior, Badie, Laurent, Chuvilin, Andrey, Petit-Watelot, Sébastien, Hueso, Luis E, Casanova, Fèlix, Rojas-Sánchez, Juan-Carlos

Topological materials are of high interest due to the promise to obtain low power and fast memory devices based on efficient spin-orbit torque switching or spin-orbit magnetic state read-out. In particular, sputtered polycrystalline Bi$_x$Se$_{1-x}$

Externí odkaz: http://arxiv.org/abs/2212.12697

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Emergence of large spin-charge interconversion at an oxidized Cu/W interface

Autor: Groen, Inge, Pham, Van Tuong, Ilić, Stefan, Choi, Won Young, Chuvilin, Andrey, Sagasta, Edurne, Vaz, Diogo C., Arango, Isabel C., Ontoso, Nerea, Bergeret, F. Sebastian, Hueso, Luis E., Tokatly, Ilya V., Casanova, Fèlix

Publikováno v: Phys. Rev. B 107, 184438 (2023)

Spin-orbitronic devices can integrate memory and logic by exploiting spin-charge interconversion (SCI), which is optimized by design and materials selection. In these devices, such as the magnetoelectric spin-orbit (MESO) logic, interfaces are crucia

Externí odkaz: http://arxiv.org/abs/2211.09250

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All-electrical spin-to-charge conversion in sputtered Bi$_x$Se$_{1-x}$

Autor: Choi, Won Young, Arango, Isabel C., Pham, Van Tuong, Vaz, Diogo C., Yang, Haozhe, Groen, Inge, Lin, Chia-Ching, Kabir, Emily S., Oguz, Kaan, Debashis, Punyashloka, Plombon, John J., Li, Hai, Nikonov, Dmitri E., Chuvilin, Andrey, Hueso, Luis E., Young, Ian A., Casanova, Fèlix

Publikováno v: Nano Lett. 22, 7992-7999 (2022)

One of the major obstacles to realizing spintronic devices such as MESO logic devices is the small signal magnitude used for magnetization readout, making it important to find materials with high spin-to-charge conversion efficiency. Although intermi

Externí odkaz: http://arxiv.org/abs/2210.09792

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