Výsledky vyhledávání

Report

Influence of ferroelastic domain walls on thermal conductivity

Autor: Limelette, P., Kamily, M. El, Aramberri, H., Giovannelli, F., Royo, M., Rurali, R., Monot-Laffez, I., Íñiguez, J., Nataf, G. F.

Publikováno v: Phys. Rev. B 108, 144104 (2023)

Enabling on-demand control of heat flow is key for the development of next-generation electronic devices, solid-state heat pumps, and thermal logic. However, precise and agile tuning of the relevant microscopic material parameters for adjusting therm

Externí odkaz: http://arxiv.org/abs/2310.13305

Zobrazit plný text záznamu

Report

Ferroelectricity in epitaxially strained rhombohedral ZrO2 thin films

Autor: Silva, J. P. B., Negrea, R. F., Istrate, M. C., Dutta, S., Aramberri, H., Íñiguez, J., Figueiras, F. G., Ghica, C., Sekhar, K. C., Kholkin, A. L.

Zirconia and hafnia based thin films have attracted tremendous attention in the last decade due to their unexpected ferroelectric behavior at the nanoscale, which facilitates the downscaling of ferroelectric devices. The present work reports a novel

Externí odkaz: http://arxiv.org/abs/2011.02728

Zobrazit plný text záznamu

Report

Spontaneous polarization induced doping in quasi-free standing epitaxial graphene on silicon carbide from density functional theory

Autor: Slawinska, J., Aramberri, H., Cerdà, J. I.

By means of density functional theory (DFT) calculations we have quantitatively estimated the impact of the spontaneous polarization (SP) of the SiC(0001) substrate on the electronic properties of quasi-freestanding graphene (QFG) decoupled from the

Externí odkaz: http://arxiv.org/abs/1501.06486

Zobrazit plný text záznamu

Akademický článek

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

Report

Ab initio study of the relationship between spontaneous polarization and p-type doping in quasi-freestanding graphene on H-passivated SiC surfaces

Autor: Slawinska, J., Aramberri, H., Muñoz, M. C., Cerdá, J. I.

Publikováno v: Carbon 93, 88-104, 2015

Quasi-free standing graphene (QFG) obtained by the intercalation of a hydrogen layer between a SiC surface and the graphene is recognized as an excellent candidate for the development of graphene based technology. In addition, the recent proposal of

Externí odkaz: http://arxiv.org/abs/1410.4551

Zobrazit plný text záznamu