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Publikováno v:
Journal of Non-Crystalline Solids. 354:2160-2163
Using three electrode vacuum system for glow discharge of 5% SiH 4 + 95% Ar gas mixture together with thermal evaporation of phosphorus or boric aced, the n- and p-type a-Si:H layers have been deposited. By co-evaporation of phosphorus or boric aced