Zobrazeno 1 - 10
of 84
pro vyhledávání: '"Arūnas, Šetkus"'
Publikováno v:
Materials, Vol 16, Iss 18, p 6107 (2023)
Recently, the development of tandem devices has become one of the main strategies for further improving the efficiency of photovoltaic modules. In this regard, combining well-established Si technology with thin film technology is one of the most prom
Externí odkaz:
https://doaj.org/article/9d81f3a8ec324143ab85392c97b150d8
Autor:
Algimantas Lukša, Virginijus Bukauskas, Viktorija Nargelienė, Marius Treideris, Martynas Talaikis, Algirdas Selskis, Artūras Suchodolskis, Arūnas Šetkus
Publikováno v:
Crystals, Vol 13, Iss 8, p 1243 (2023)
Unique electronic properties of graphene offer highly interesting ways to manipulate the functional properties of surfaces and develop novel structures which are sensitive to physical and chemical interactions. Nano-crystalline graphene is frequently
Externí odkaz:
https://doaj.org/article/ec42e572b40447488fb2c82b6b38eb4d
Autor:
Matas Rudzikas, Jolanta Donėlienė, Ernesta Bužavaitė-Vertelienė, Zigmas Balevičius, Cedric Leuvrey, Arūnas Šetkus
Publikováno v:
Solar Energy. 250:285-294
Autor:
Agnė Zdaniauskienė, Ilja Ignatjev, Tatjana Charkova, Martynas Talaikis, Algimantas Lukša, Arūnas Šetkus, Gediminas Niaura
Publikováno v:
Materials, Vol 15, Iss 5, p 1636 (2022)
Graphene research and technology development requires to reveal adsorption processes and understand how the defects change the physicochemical properties of the graphene-based systems. In this study, shell-isolated nanoparticle-enhanced Raman spectro
Externí odkaz:
https://doaj.org/article/13777182f53242cd8f1517fc13a7917e
Autor:
Marius Treideris, Virginijus Bukauskas, Alfonsas Rėza, Irena Šimkienė, Arūnas Šetkus, Andrius Maneikis, Viktorija Strazdienė
Publikováno v:
Medžiagotyra, Vol 21, Iss 1, Pp 3-6 (2015)
Macroporous silicon light trapping layers on the surface of p-type substrates were manufactured by using electrochemical etching. Optical measurements have shown the decreased optical reflection as compared to bulk silicon. The p-n junction was forme
Externí odkaz:
https://doaj.org/article/e13a78ab93d446e59379336e4b7e7947
Autor:
Simona Povilonienė, Vida Časaitė, Virginijus Bukauskas, Arūnas Šetkus, Juozas Staniulis, Rolandas Meškys
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 6, Iss 1, Pp 124-133 (2015)
The propensity of peptides and proteins to form self-assembled structures has very promising applications in the development of novel nanomaterials. Under certain conditions, amyloid protein α-synuclein forms well-ordered structures – fibrils, whi
Externí odkaz:
https://doaj.org/article/7b5f067ddaef43b1b75992584a04721b
Publikováno v:
Journal of Physics D: Applied Physics. 56:345305
Metal–graphene–metal (M–G–M) stacks have provided new specific methods for the integration of two-dimensional (2D) materials into three-dimensional (3D) electronic devices, such as transistors, supercapacitors, memristors and others. Intentio
Autor:
Algimantas Lukša, Vladimir Astachov, Saulius Balakauskas, Virginijus Bukauskas, Mindaugas Kamarauskas, Artūras Suchodolskis, Marius Treideris, Martynas Talaikis, Arūnas Šetkus
Publikováno v:
Surfaces and Interfaces. 36:102508
Autor:
Marius TREIDERIS, Virginijus BUKAUSKAS, Alfonsas RĖZA, Irena ŠIMKIENĖ, Arūnas ŠETKUS, Andrius MANEIKIS
Publikováno v:
Medžiagotyra, Vol 20, Iss 2, Pp 144-146 (2014)
Porous silicon light trapping layers (por-Si LTL) were manufactured using electrochemical etching. Optical measurements have shown the improved por-Si LTL optical properties versus bulk silicon. The p-n junction was formed by boron diffusion from bor
Externí odkaz:
https://doaj.org/article/a074ad7f44144b74b05c54203154259e
Autor:
Arturas SUCHODOLSKIS, Alfonsas RĖZA, Virginijus BUKAUSKAS, Audružis MIRONAS, Arūnas ŠETKUS, Irena ŠIMKIENĖ
Publikováno v:
Medžiagotyra, Vol 20, Iss 2, Pp 150-152 (2014)
TiO2 ultrathin films of thickness below 20 nm were deposited by reactive RF magnetron sputtering. The optical properties of TiO2 films were investigated by various optical techniques including UV-VIS-NIR spectroscopic ellipsometry. The Scanning Probe
Externí odkaz:
https://doaj.org/article/93bf61b558e7426696059dbc90ed1af6