Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Apurva Chaudhari"'
Autor:
Kalyan Banerjee, Ajay Kakkar, Kashif Ahmed Shamsi, Deepak Bansal, Priyesh Mathur, Nitin Madan Potode, Pankaj Pagariya, Sha Perveez Azher, Apurva Chaudhari, Ritu Mandal, Archana S. Karadkhele, Neeraj Markandeywar, Shruti Dharmadhikari, Chintan Khandhedia, Amey Mane, Suyog Mehta, Sadhna Joglekar
Publikováno v:
Drugs - Real World Outcomes, Vol 11, Iss 1, Pp 53-68 (2023)
Abstract Background Despite multiple antibiotics being available to manage dental infections (DI), there is lack of data comparing commonly prescribed antibiotics in India. Objectives The aim of this study was to evaluate the real-world effectiveness
Externí odkaz:
https://doaj.org/article/ce79639744b84100bb09a69cec12fff5
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789811984761
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4a61822e3aba160949f5da79d8fe239
https://doi.org/10.1007/978-981-19-8477-8_7
https://doi.org/10.1007/978-981-19-8477-8_7
Publikováno v:
2018 Fourth International Conference on Computing Communication Control and Automation (ICCUBEA).
In this paper, a detailed and effective usage of checking residential conditions at low price is presented. IoT consists of internet enabled objects which acts on data collected from environment. IoT has been used for observing and detecting natural
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a55341b72475813fad8d8aa4cbc33c08
https://doi.org/10.1109/iccubea.2018.8697481
https://doi.org/10.1109/iccubea.2018.8697481
Publikováno v:
2008 IEEE Radio Frequency Integrated Circuits Symposium.
The design and performance of a 0.1 to 5 GHz medium power distributed amplifier is described. The circuit is realized using a low-cost GaN-on-silicon MMIC process featuring 0.5 mum gate length GaN HFETs on a 150 mum thick high resistivity silicon sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2826e432c54fc88404abf03d8a61c4c8
https://doi.org/10.1109/rfic.2008.4561492
https://doi.org/10.1109/rfic.2008.4561492
Autor:
Edwin L. Piner, Sameer Singhal, Andrew Edwards, Robert Joseph Therrien, Apurva Chaudhari, Wayne Johnson, Kevin J. Linthicum, W. Nagy, Allen W. Hanson, John Roberts, Isik C. Kizilyalli, Pradeep Rajagopal, Quinn Martin, Todd Nichols
Publikováno v:
MRS Proceedings. 1068
In the last decade, GaN-on-Si has progressed from fundamental crystal growth studies to product realization and reliability demonstration. GaN-on-Si HEMTs addressing cellular, WiMAX, and broadband RF applications are now commercially available and of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f347da0ac6b31c9f3de8842c39963ce9
https://doi.org/10.1557/proc-1068-c04-01
https://doi.org/10.1557/proc-1068-c04-01
A Comparison of AlGaN/GaN HFETs on Si Substrates in Ceramic Air Cavity and Plastic Overmold Packages
Autor:
Apurva Chaudhari, Sameer Singhal, Jerry W. Johnson, Andrew Edwards, C. Park, C. Snow, Kevin J. Linthicum, Robert Joseph Therrien, W. Nagy, Allen W. Hanson, Isik C. Kizilyalli
Publikováno v:
2007 IEEE/MTT-S International Microwave Symposium.
AlGaN/GaN HFETs on Si substrates have been assembled in ceramic air cavity and plastic overmold packages. Thermal, DC, small and large signal RF and reliability characterization have been performed on both types of devices. Thermal characterization s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab38c43f3d937578f58e233433511bd6
https://doi.org/10.1109/mwsym.2007.379981
https://doi.org/10.1109/mwsym.2007.379981