Zobrazeno 1 - 10
of 94
pro vyhledávání: '"Apostolos T. Voutsas"'
Autor:
Dimitrios N. Kouvatsos, N. A. Hastas, Christoforos G. Theodorou, A. Tsormpatzoglou, Charalabos A. Dimitriadis, Apostolos T. Voutsas, Despina Moschou
Publikováno v:
Journal of Display Technology. 9:747-754
Double-gate (DG) polysilicon thin-film transistors (TFTs) are considered very important for future large area electronics, due to their capability to electrically control TFT characteristics. The scope of this paper is to study how high performance D
Autor:
Dimitrios N. Kouvatsos, Giannis P. Kontogiannopoulos, Despina Moschou, Filippos Farmakis, Apostolos T. Voutsas
Publikováno v:
Facta universitatis - series: Electronics and Energetics. 26:247-280
Low temperature polycrystalline silicon thin film transistors (LTPS poly-Si TFTs) are essential for large area electronics and high performance flat panel displays. In recent years, LTPS TFT performance has substantially increased due to the importan
Autor:
Matroni Koutsoureli, Dimitrios N. Kouvatsos, Apostolos T. Voutsas, Loukas Michalas, George J. Papaioannou
Publikováno v:
Microelectronic Engineering. 90:72-75
The field effect mobility is sufficiently and impressively improved by increasing the passivation time from 15min to 50min, denoting that SLS films allow quite efficient passivation of defects. The present work investigates the effects of hydrogen pa
Publikováno v:
Microelectronics Reliability. 50:1848-1851
The degradation mechanism of poly-Si TFTs due to alpha particles irradiation is investigated. The tested devices exhibit increase in the density of interface states and grain boundaries traps proportional to the radiation fluence, Δ N / N 0 = K ∗
Autor:
George J. Papaioannou, Apostolos T. Voutsas, Giannis P. Kontogiannopoulos, Dimitrios N. Kouvatsos, Filippos Farmakis
Publikováno v:
IEEE Transactions on Electron Devices. 57:1390-1398
Degradation phenomena under the application of a variety of hot-carrier stress conditions were investigated in n-channel top-gate polysilicon thin-film transistors of various channel widths, fabricated by sequential lateral solidification excimer las
Publikováno v:
Microelectronics Reliability. 50:190-194
In this work we point out the importance of the device parameter Vg,max–Vth (the difference between the gate voltage at maximum transconductance and the threshold voltage obtained from linear extrapolation method) for LTPS TFTs under dc stress. The
Autor:
Despina Moschou, Dimitrios N. Kouvatsos, Apostolos T. Voutsas, George J. Papaioannou, M. A. Exarchos, A. Arapoyanni
Publikováno v:
Thin Solid Films. 517:6375-6378
The electrical characterization, in terms of drain current, of SLS ELA p-channel polysilicon TFTs is investigated. The study was based on the DLTS technique. It was found that drain current is governed by trapping/detrapping mechanisms associated to
Autor:
George J. Papaioannou, Dimitrios N. Kouvatsos, Despina Moschou, M. A. Exarchos, Apostolos T. Voutsas
Publikováno v:
physica status solidi c. 5:3634-3637
The performance of Excimer Laser Annealed (ELA) Thin-Film Transistors (TFTs), in terms of drain current behaviour in unstressed as well as in DC stressed devices, is presented. The transistors studied were fabricated under different irradiation schem
Publikováno v:
physica status solidi c. 5:3630-3633
Polysilicon TFTs were fabricated using solid phase crystallization (SPC) and also two different excimer laser annealing techniques (ELA) for polysilicon crystallization. Moreover, we tried two different gate oxide deposition methods, using PECVD or T
Publikováno v:
physica status solidi c. 5:3613-3616
The present work presents, for the first time, a simultaneous analysis of the overshoot and undershoots effects in polycrystalline silicon Thin Film Transistors fabricated on SLS-ELA films, as a function of temperature. The results suggest the presen