Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Apo Sezginer"'
Publikováno v:
SPIE Proceedings.
Mask Process Compensation (MPC) corrects proximity effects arising from e-beam lithography and plasma etch processes that are used in the photomask manufacturing. Accurate compensation of the mask process requires accurate, predictive models of the m
Publikováno v:
SPIE Proceedings.
We present a model-based method of generating and optimizing sub-resolution assist features. Assist feature generation is based on a focus sensitivity map derived from a cost function that minimizes the variations in the printed pattern with respect
Publikováno v:
SPIE Proceedings.
We quantify the OPC accuracy improvement obtained by including the stepper signatures in the OPC model. The analysis takes into account the complete cycle of OPC model calibration, OPC execution, and image verification of the OPCed photomask. We use
Autor:
Justin Ghan, Apo Sezginer
Publikováno v:
SPIE Proceedings.
An algorithm is presented which performs a model-based colouring of a given layout for double patterning. The algorithm searches the space of patterns which can be printed with a particular wavelength and numerical aperture, and seeks to find a pair
Autor:
Michiel Victor Paul Kruger, Vishnu Kamat, Marc D. Himel, Bayram Yenikaya, Jared D. Stack, Apo Sezginer, Tamer H. Coskun, James Carriere
Publikováno v:
SPIE Proceedings.
We present a method for optimizing a free-form illuminator implemented using a diffractive optical element (DOE). The method, which co-optimizes the source and mask taking entire images of circuit clips into account, improves the common process-windo
Autor:
Jesus Carrero, Alan Zhu, Katsuyuki Miyoko, Yoshimitsu Okuda, Gökhan Perçin, Apo Sezginer, Kiyoshi Kageyama, Anwei Liu
Publikováno v:
SPIE Proceedings.
In recent years, mask critical dimension (CD) linearity and uniformity has become increasingly important. The ITRS roadmap shows the mask CD control requirements exceeding those of the wafer side beyond the 45nm node. Measurements show that there are
Publikováno v:
SPIE Proceedings.
We consider a memory device that is printed by double patterning (litho-etch-litho-etch) technology wherein positive images of 1/4-pitch lines are printed in each patterning step. We analyze the errors that affect the width of the spaces. We propose
Autor:
Apo Sezginer, Bayram Yenikaya
Publikováno v:
SPIE Proceedings.
We present a necessary condition for an arbitrary 2-dimensional pattern to be printable by optical projection lithography. We call a pattern printable if it satisfies a given set of edge-placement tolerances for a given lithography model and process-
Autor:
Apo Sezginer, Bayram Yenikaya
Publikováno v:
SPIE Proceedings.
Autor:
Vishnu Kamat, Hsu-Ting Huang, Apo Sezginer, Ali Mokhberi, Jesus Carrero, Gökhan Perçin, Franz X. Zach
Publikováno v:
SPIE Proceedings.
We present a methodology for building through-process, physics-based litho and etch models which result in accurate and predictive models. The litho model parameters are inverted using resist SEM data collected on a set of test-structures for a set o