Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Anya Curran"'
Autor:
Anya Curran, Farzan Gity, Agnieszka Gocalinska, Enrica Mura, Roger E. Nagle, Michael Schmidt, Brendan Sheehan, Emanuele Pelucchi, Colm O’Dwyer, Paul K. Hurley
Publikováno v:
Crystals, Vol 11, Iss 11, p 1348 (2021)
In this paper, we report on the structural and electronic properties of polycrystalline gallium antimonide (poly-GaSb) films (50–250 nm) deposited on p+ Si/SiO2 by metalorganic vapour phase epitaxy at 475 °C. GaSb films grown on semi-insulating Ga
Externí odkaz:
https://doaj.org/article/e1a788fbc76d4c60a486dfc8daf77050
Autor:
Anya Curran, Agnieszka Gocalinska, Andrea Pescaglini, Eleonora Secco, Enrica Mura, Kevin Thomas, Roger E. Nagle, Brendan Sheehan, Ian M. Povey, Emanuele Pelucchi, Colm O’Dwyer, Paul K. Hurley, Farzan Gity
Publikováno v:
Crystals, Vol 11, Iss 2, p 160 (2021)
Polycrystalline indium arsenide (poly InAs) thin films grown at 475 °C by metal organic vapor phase epitaxy (MOVPE) are explored as possible candidates for low-temperature-grown semiconducting materials. Structural and transport properties of the fi
Externí odkaz:
https://doaj.org/article/b4687f6106c14ab2a814c4d1d2f9e4d7
Autor:
Brendan Sheehan, Ian M. Povey, Emanuele Pelucchi, Enrica E. Mura, Roger Nagle, Anya Curran, Eleonora Secco, Farzan Gity, Kevin Thomas, Agnieszka Gocalinska, Andrea Pescaglini, Colm O'Dwyer, Paul K. Hurley
Publikováno v:
Crystals
Volume 11
Issue 2
Crystals, Vol 11, Iss 160, p 160 (2021)
Volume 11
Issue 2
Crystals, Vol 11, Iss 160, p 160 (2021)
Polycrystalline indium arsenide (poly InAs) thin films grown at 475 °C by metal organic vapor phase epitaxy (MOVPE) are explored as possible candidates for low-temperature-grown semiconducting materials. Structural and transport properties of the fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6a516321fb10734ea7065a5495a392fe
Autor:
Fintan Meaney, Paul K. Hurley, Lida Ansari, Farzan Gity, Ray Duffy, Anya Curran, Stephen Fahy
This paper is selected as Featured This paper presents comprehensive density functional theory-based simulations to understand the characteristics of dopant atoms in the core and on the surface of ultra-thin sub-5 nm Si films. Quantum confinement-ind
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb540de4fec4d2937a3720891b021323
https://hdl.handle.net/10468/10864
https://hdl.handle.net/10468/10864
Autor:
Paul K. Hurley, Brendan Sheehan, Enrica E. Mura, Anya Curran, Colm O'Dwyer, Agnieszka Gocalinska, Roger Nagle, Emanuele Pelucchi, Farzan Gity, Michael Schmidt
Publikováno v:
Crystals, Vol 11, Iss 1348, p 1348 (2021)
Crystals
Volume 11
Issue 11
Crystals
Volume 11
Issue 11
In this paper, we report on the structural and electronic properties of polycrystalline gallium antimonide (poly-GaSb) films (50–250 nm) deposited on p+ Si/SiO2 by metalorganic vapour phase epitaxy at 475 °C. GaSb films grown on semi-insulating Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b4b67e25d71a08c247fefd3f784838f
https://doi.org/10.3390/cryst11111348
https://doi.org/10.3390/cryst11111348
Autor:
K. Thomas, Ian M. Povey, Anya Curran, Agnieszka Gocalinska, Paul K. Hurley, Paweł P Michałowski, Roger Nagle, Michael Schmidt, Farzan Gity, Eleonora Secco, Emanuele Pelucchi, Andrea Pescaglini, Enrica E. Mura
Publikováno v:
Journal of Physics: Photonics. 2:025003
We report on the growth and electronic properties of polycrystalline III–V semiconductors, which to date have not been discussed in depth in the literature. III–V polycrystalline semiconductor thin films were grown by metalorganic vapour phase ep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8f010e92e0de51e6ae3d785c57a3c69
https://doi.org/10.1088/2515-7647/ab7557
https://doi.org/10.1088/2515-7647/ab7557
Autor:
Anya Curran, Eleonora Secco, Andrea Pescaglini, Agnieszka Gocalinska, Enrica Mura, Kevin Thomas, Ian M Povey, Emanuele Pelucchi, Colm O'Dwyer, P. K. Hurley, Farzan Gity
Publikováno v:
ECS Meeting Abstracts. :1165-1165
As conventional semiconductor devices approach the limit of dimensional scaling, the hardware underpinning Information and Communication Technologies is entering an exciting new phase where further increases in integration density will depart from co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21cf10f56670933ec311f3d885b8a882
https://doi.org/10.1149/ma2018-02/34/1165
https://doi.org/10.1149/ma2018-02/34/1165