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Autor:
B. K. Sehgal, Somna S. Mahajan, Robert Laishram, Sonalee Kapoor, Anushree Tomar, Amit Mailk, Seema Vinayak, A. A. Naik
Publikováno v:
Physics of Semiconductor Devices ISBN: 9783319030012
Ni/Au Schottky contacts to AlGaN/GaN HEMT were formed by E-beam evaporation technique and lift-off process. The contacts were Rapid thermal annealed at 300 °C for duration of 2–10 min. A significant suppression in gate leakage current was observed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0447b070260cdcc0b6a99495960fe0ea
https://doi.org/10.1007/978-3-319-03002-9_37
https://doi.org/10.1007/978-3-319-03002-9_37
