Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Anushka, Bansal"'
Autor:
Anushka Bansal, Nadire Nayir, Ke Wang, Patrick Rondomanski, Shruti Subramanian, Shalini Kumari, Joshua A. Robinson, Adri C. T. van Duin, Joan M. Redwing
Publikováno v:
ACS Nano. 17:230-239
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cf522b2dbad4bbf3a10f0fa72bbbce6
https://doi.org/10.1021/acsnano.2c07091
https://doi.org/10.1021/acsnano.2c07091
Publikováno v:
Journal of Materials Research. 36:4678-4687
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6502bbfeab9f6ea5271c6f51c50e451d
https://doi.org/10.1557/s43578-021-00446-5
https://doi.org/10.1557/s43578-021-00446-5
Autor:
Ke Wang, Azimkhan Kozhakhmetov, Maria Hilse, Anushka Bansal, Ji Hyun Kim, Roman Engel-Herbert, Saiphaneendra Bachu, Nasim Alem, Joshua A. Robinson, Benjamin Huet, Ramon Collazo, Joan M. Redwing
Publikováno v:
ACS Applied Materials & Interfaces. 13:54516-54526
A comparison of hexagonal boron nitride (hBN) layers grown by chemical vapor deposition on C-plane (0001) versus A-plane (1120) sapphire (α-Al2O3) substrate is reported. The high deposition temperature (>1200 °C) and hydrogen ambient used for hBN d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::daae30cd428788a9d9ed736fb5330391
https://doi.org/10.1021/acsami.1c14591
https://doi.org/10.1021/acsami.1c14591
Publikováno v:
2D Materials for Electronics, Sensors and Devices ISBN: 9780128215050
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c14453e6610b921f2e615c7fafda7b93
https://doi.org/10.1016/b978-0-12-821505-0.00003-4
https://doi.org/10.1016/b978-0-12-821505-0.00003-4
Autor:
Pallavi Aggarwal, Anushka Bansal, Tanushree H. Choudhury, Tejendra K Gupta, Weida Hu, Benjamin Huet, Deep Jariwala, Jie Jiang, Baisali Kundu, Saurabh Lodha, Jinshui Miao, Himanshu Mishra, Prachi Mohanty, Suyash Rai, Joan M. Redwing, Prasana Kumar Sahoo, Madan Sharma, Aditya Singh, Rajendra Singh, Vijay K Singh, Sahin Sorifi, Anchal Srivastava, Jingya Su, Kartikey Thakar, Zhen Wang, Xiaotian Zhang
Publikováno v:
2D Materials for Electronics, Sensors and Devices ISBN: 9780128215050
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d688d29be984a6d85bc7e888a8486fb
https://doi.org/10.1016/b978-0-12-821505-0.00099-x
https://doi.org/10.1016/b978-0-12-821505-0.00099-x
Autor:
Anushka, Bansal, Nadire, Nayir, Ke, Wang, Patrick, Rondomanski, Shruti, Subramanian, Shalini, Kumari, Joshua A, Robinson, Adri C T, van Duin, Joan M, Redwing
Publikováno v:
ACS nano.
Ultrathin 2D-GaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::879e2f0d4d6e06d7fd029a00a86ff1ad
https://pubmed.ncbi.nlm.nih.gov/36580283
https://pubmed.ncbi.nlm.nih.gov/36580283
Autor:
Haoyue Zhu, Nadire nayir, Tanushree Choudhury, Anushka Bansal, Benjamin Huet, Kunyan Zhang, Alexander Puretzky, Saiphaneendra Bachu, Krystal York, Thomas Mc Knight, Nicholas Trainor, Ke Wang, Robert Makin, Steven Durbin, Shengxi Huang, Nasim Alem, Vincent Crespi, Adri Van Duin, Joan Redwing
Epitaxial growth of 2D transition metal dichalcogenides (TMDs) on sapphire has emerged as a promising route to wafer-scale single crystal films. Steps on the sapphire act as sites for TMD nucleation and can impart a preferred domain orientation resul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f53dd40bc2b216c741506ad15bc5c41
https://doi.org/10.21203/rs.3.rs-2180223/v1
https://doi.org/10.21203/rs.3.rs-2180223/v1
Autor:
Nicholas Trainor, Mikhail Chubarov, Tanushree H. Choudhury, Saptarshi Das, Anushka Bansal, Joan M. Redwing, Amritanand Sebastian, Tianyi Zhang, Saiphaneendra Bachu, Nasim Alem, Mauricio Terrones, Haoyue Zhu, Danielle Reifsnyder Hickey
Publikováno v:
ACS Nano. 15:2532-2541
Realization of wafer-scale single-crystal films of transition metal dichalcogenides (TMDs) such as WS2 requires epitaxial growth and coalescence of oriented domains to form a continuous monolayer. The domains must be oriented in the same crystallogra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ef90539134a7440d01e43349773f055
https://doi.org/10.1021/acsnano.0c06750
https://doi.org/10.1021/acsnano.0c06750
Autor:
Eric R. Heller, Asegun Henry, Andrew A. Allerman, Alexej Pogrebnyakov, Venkatraman Gopalan, Disha Talreja, Yiwen Song, Daniel Shoemaker, Hamid Reza Seyf, Joan M. Redwing, Sukwon Choi, Bikramjit Chatterjee, James Spencer Lundh, Robert Kaplar, Christopher B. Saltonstall, Albert G. Baca, Thomas E. Beechem, Andrew M. Armstrong, Brian M. Foley, Brianna Klein, Anushka Bansal
Publikováno v:
IEEE Electron Device Letters. 41:461-464
Aluminum gallium nitride (AlGaN) high electron mobility transistors (HEMTs) are candidates for next-generation power conversion and radio frequency (RF) applications. AlxGa1-xN channel HEMT devices (x = 0.3, x = 0.7) were investigated using multiple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53910c5aad50b0eec80dff04938e9fbf
https://doi.org/10.1109/led.2020.2969515
https://doi.org/10.1109/led.2020.2969515
Publikováno v:
Journal of Electronic Materials. 48:3355-3362
The metalorganic chemical vapor deposition growth of GaN on strained Si/Si1−xGex epilayers on (111) Si substrates was investigated. A multi-beam optical stress sensor (MOSS) was used for in situ stress measurements during growth of the entire heter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e77275aac9ea57ad7e4663bd480380b
https://doi.org/10.1007/s11664-019-07031-x
https://doi.org/10.1007/s11664-019-07031-x