Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Anuradha Dhaul"'
Autor:
A. Moitra, N. Sivai Bharasi, U. Kamachi Mudali, Anuradha Dhaul, S. Chandramouli, C. Mallika, M. G. Pujar, M. Nandagopal, K. K. Rajan, K. Thyagarajan
Publikováno v:
Metallurgical and Materials Transactions A. 46:6065-6080
AISI Type 316LN stainless steel (SS) and modified 9Cr-1Mo steel were exposed to flowing sodium at 798 K (525 °C) for 30000 hours in a bi-metallic sodium loop. The changes in microchemical, microstructural, and mechanical properties were evaluated an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::563774f9b7795d3dee8b811acee0e0d2
https://doi.org/10.1007/s11661-015-3147-2
https://doi.org/10.1007/s11661-015-3147-2
Autor:
B. K. Sehgal, Anuradha Dhaul, Somna S. Mahajan, Robert Laishram, Seema Vinayak, Sonalee Kapoor
Publikováno v:
Materials Science and Engineering: B. 183:47-53
In this work, ohmic contacts were formed by varying the Ti/Al thickness ratio in the metal stack of Ti/Al/Ni/Au on Al .28 Ga .72 N/GaN HEMT epistructure followed by annealing in the temperature range 740–860 °C by rapid thermal processor (RTP). Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ca1a51c996a40870d7105b31b32e91d
https://doi.org/10.1016/j.mseb.2013.12.005
https://doi.org/10.1016/j.mseb.2013.12.005
Autor:
Shankar Dutta, R. Raman, Ratnamala Chatterjee, Ramjay Pal, Anuradha Dhaul, G. Saxena, Akhilesh Pandey
Publikováno v:
Journal of Materials Science: Materials in Electronics. 23:1569-1574
In recent years the boron impurity-based dissolved wafer process has been repeatedly demonstrated as a powerful tool for forming single crystal Si microstructures. However, there is very little report on detailed characterization of the deep boron di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b9618811e84aae23b41a6bd073ba318
https://doi.org/10.1007/s10854-012-0630-z
https://doi.org/10.1007/s10854-012-0630-z
Publikováno v:
Defence Science Journal. 59:342-350
Secondary ion mass spectrometry (SIMS) is an analytical technique that can be used to characterise the surface and near-surface region of solids. The instrument operation and data analysis have been discussed to obtain meaningful results. The paper d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93824b1914f6b6e64fc4400b694876b6
https://doi.org/10.14429/dsj.59.1532
https://doi.org/10.14429/dsj.59.1532
Publikováno v:
Physics of Semiconductor Devices ISBN: 9783319030012
Cd/Hg Interdiffusion in CdTe passivation layers on HgCdTe epilayer by heat treatment under different annealing conditions have been studied using Secondary Ion Mass Spectrometry (SIMS). Cdmium and Mercury composition profiles have been generated from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db64f616990b80dac606b5eff875ef3e
https://doi.org/10.1007/978-3-319-03002-9_225
https://doi.org/10.1007/978-3-319-03002-9_225
Publikováno v:
Semiconductor Science and Technology. 8:1679-1681
29Si+ implantation in InP:Fe was performed at room temperature with an energy of 150 keV at 1*1014 cm-2. Face-to-face proximity furnace annealing was done at 750 degrees C for 15 min in flowing N2 and H2. Investigations were made by measuring differe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21565ef8a2f8c735f3b8e3498117c4aa
https://doi.org/10.1088/0268-1242/8/8/032
https://doi.org/10.1088/0268-1242/8/8/032
Autor:
Rachna Manchanda, O. P. Thakur, P. K. Basu, Anuradha Dhaul, A. Malik, M. B. Dutt, R. K. Sharma, R. Pal
Publikováno v:
Journal of Applied Physics. 101:116102
Be ion implantation/irradiation in HgCdTe has been explored from the point of view of fabricating n region on p-type structures. Be implantation was carried out in vacancy doped p-type bulk HgCdTe crystals at 200KeV ion energy and a fluence of 1×101
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fef69845853965ed04e1d8d558e638c
https://doi.org/10.1063/1.2736645
https://doi.org/10.1063/1.2736645
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Conference
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