Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Anup Phatak"'
Publikováno v:
Solar Energy Materials and Solar Cells. 94:1512-1515
Hot wire chemical vapor deposition (HWCVD) provides a low cost fabrication technology for hyrdogenated amorphous silicon (a-Si:H) based thin film single junction and tandem solar cells. In this paper, we report our results on the high deposition rate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43043c329d13c02b7be039776cf4bb31
https://doi.org/10.1016/j.solmat.2010.01.027
https://doi.org/10.1016/j.solmat.2010.01.027
Autor:
Kathy Barla, Farid Sebaai, Anup Phatak, D. Fried, William F. Clark, Dan Mocuta, Naoto Horiguchi, Morin Dehan, H. Dekkers, Adam Brand, Z. Tao, Tom Schram, L.-A. Ragnarsson, S. Van Elshocht, Naomi Yoshida, Christina Baerts, Katia Devriendt, Bertrand Parvais, Christopher Lazik, S. A. Chew, Aaron Thean
Publikováno v:
2015 Symposium on VLSI Technology (VLSI Technology).
A novel RMG process in which the n-type work function metal (nWFM) is deposited first and then selectively removed from the pMOS devices is presented for the first time. The key benefit of this nMOS 1st process lies in increased gate-fill space which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7cc3a61b3a7b7b9fd935ef1aa37b46d
https://doi.org/10.1109/vlsit.2015.7223656
https://doi.org/10.1109/vlsit.2015.7223656
Autor:
Aaron Thean, K. Han, A. De Keersgieter, Anup Phatak, Bertrand Parvais, H. Dekkers, Adam Brand, S. A. Chew, Katia Devriendt, Tom Schram, L.-A. Ragnarsson, Naoto Horiguchi, Naomi Yoshida, Benjamin Colombeau, M. Toledano Luque, A. Van Ammel
Publikováno v:
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.
A scalable multi-V T enabled RMG CMOS integration process with highly conformal ALD TiN/TiAl/TiN is described. The multi-V T is implemented by metal gate tuning using two different options. The first relies on bottom-barrier thickness control, the se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19b2d1ce62d6d0375f2135011268ce1a
https://doi.org/10.1109/vlsit.2014.6894359
https://doi.org/10.1109/vlsit.2014.6894359
Autor:
Matthew Beach, Raymond Hung, Miao Jin, Keping Han, Daxin Mao, Shiyu Sun, Xinliang Lu, S. Hassan, Peng-Fu Hsu, Yu Lei, Anup Phatak, Adam Brand, Naomi Yoshida, Hao Chen, Kun Xu, Srinivas Gandikota, Jing Zhou, Atif Noori, Wei Tang, Chorng-Ping Chang
Publikováno v:
Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
This paper describes a novel scheme of metal gate integration to achieve precise threshold voltage (VTH) control and multiple VTH, by using metal composition and ion implantation (I/I) into work function metal (WFM). Moreover, WFM full fill is demons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::835fdf737360372728425f4579ffaa81
https://doi.org/10.1109/vlsi-tsa.2014.6839647
https://doi.org/10.1109/vlsi-tsa.2014.6839647
Autor:
Harold Dekkers, H. Tielens, Geert Eneman, Hugo Bender, A. Van Ammel, J. Geypen, Luigi Pantisano, Naoto Horiguchi, Thomas Witters, L. Carbonell, Anabela Veloso, K. Devriendt, S. Brus, L.-A. Ragnarsson, S. A. Chew, Higuchi Yuichi, Aaron Thean, Anup Phatak, Olivier Richard, Nancy Heylen, Tom Schram, Farid Sebaai, Paola Favia
Publikováno v:
Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e220b067b2b171f9d8be404c186c8f56
https://doi.org/10.7567/ssdm.2012.d-7-2
https://doi.org/10.7567/ssdm.2012.d-7-2
Autor:
Farid Sebaai, Anup Phatak, S. A. Chew, H. Tielens, Xinliang Lu, Harold Dekkers, Adam Brand, A. Van Ammel, Thomas Witters, Aaron Thean, Yu Lei, Atif Noori, Wei Tang, Srinivas Gandikota, J. Geypen, Seshadri Ganguli, Xinyu Fu, Naoto Horiguchi, K. Devriendt, L.-A. Ragnarsson, Michael S. Chen, S. Brus, Higuchi Yuichi, Naomi Yoshida, Anabela Veloso, Hugo Bender, Nancy Heylen, Eddy Simoen, Paola Favia, Tom Schram
Publikováno v:
Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f42681e8f484fcb9d22d4b42ab8434c3
https://doi.org/10.7567/ssdm.2012.d-1-2
https://doi.org/10.7567/ssdm.2012.d-1-2
Autor:
Hugo Bender, W. S. Yoo, T. Xu, C. Liu, E. Vecchio, Hilde Tielens, E. Rohr, Stephan Brus, Anabela Veloso, H. Dekkers, A. Van Ammel, Anup Phatak, S. A. Chew, Geert Eneman, J. del Agua Borniquel, Vasile Paraschiv, Lars-Ake Ragnarsson, Naoto Horiguchi, Moon Ju Cho, Katia Devriendt, Aaron Thean, Kristof Kellens, Y. Crabbe, Eddy Simoen, Tom Schram, Higuchi Yuichi, X. Shi, Kun Xu, J. Geypen, M. Allen, Farid Sebaai, Paola Favia
Publikováno v:
2012 Symposium on VLSI Technology (VLSIT).
We report on aggressively scaled RMG-HKL devices, with tight low-V T distributions [σ(V Tsat ) ∼ 29mV (PMOS), ∼ 49mV (NMOS) at L gate ∼35nm] achieved through controlled EWF-metal alloying for NMOS, and providing an in-depth overview of its ena
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db996fa6ccc399cb2c3ab0093ed510b3
https://doi.org/10.1109/vlsit.2012.6242447
https://doi.org/10.1109/vlsit.2012.6242447
Autor:
Zheng Yuan, Yong Kee Chae, Michel Frei, L. Zhao, Anup Phatak, Dapeng Wang, Hui W. Chen, Anna Bezryadina, Glenn Alers
Publikováno v:
2011 37th IEEE Photovoltaic Specialists Conference.
We developed new hydrogenated boron doped amorphous silicon oxide window p layer for thin film solar device on the commercial SnO 2 :F TCO. With improved optical band gap (OBG), low refraction index and low defect density, the tandem junction top cel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::313bd7ff759beb2f8cbef5358cdb2f87
https://doi.org/10.1109/pvsc.2011.6186047
https://doi.org/10.1109/pvsc.2011.6186047
Autor:
Anabela Veloso, Atif Noori, Wei Tang, Naoto Horiguchi, Xinyu Fu, Hilde Tielens, Nancy Heylen, Harold Dekkers, Seshadri Ganguli, Eddy Simoen, Anup Phatak, Katia Devriendt, Thomas Witters, Aaron Thean, J. Geypen, Annemie Van Ammel, Yu Lei, Soon Aik Chew, Srinivas Gandikota, Naomi Yoshida, Lars-Ake Ragnarsson, Tom Schram, Xinliang Lu, Paola Favia, Stephan Brus, Hugo Bender, Michael S. Chen, Farid Sebaai, Adam Brand, Higuchi Yuichi
Publikováno v:
Japanese Journal of Applied Physics. 52:04CA02
This work reports on aggressively scaled replacement metal gate, high-k last devices (RMG-HKL), exploring several options for effective work function (EWF) engineering, and targeting logic high-performance and low-power applications. Tight low-thresh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a5f2be302572414135787354e4b5a9f
https://doi.org/10.7567/jjap.52.04ca02
https://doi.org/10.7567/jjap.52.04ca02