Zobrazeno 1 - 9 of 9 pro vyhledávání: '"Anumita Sengupta"'
3
Dual-gate β-Ga2O3 nanomembrane transistors: device operation and analytical modelling
Autor: Tarun Kanti Bhattacharyya, Gourab Dutta, Anumita Sengupta
Publikováno v: Journal of Physics D: Applied Physics. 54:405103
Physical operation and performance of a dual gate β-Gallium Oxide nanomembrane field effect transistor (NM-FET) with asymmetric top and back gate oxide thicknesses are investigated for different modes of operation. A physics-based device simulator c
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9cbbee9c85847b48412b22c1f62fc9df
https://doi.org/10.1088/1361-6463/ac0de4
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4
Study of Al0.22Ga0.78As/In0.18Ga0.82As/GaAs PHEMT with delta doping and lower Al mole fraction
Autor: Anumita Sengupta, Manisha Guduri, Aminul Islam, Kumar Ankit, Om Prakash, Rohan Kumar
Publikováno v: 2017 International Conference on Multimedia, Signal Processing and Communication Technologies (IMPACT).
In this paper, DC and RF performance of a pseudomorphic high electron mobility transistor (PHEMT) with an Al 0.22 Ga 0.78 As supply layer, In 0.18 Ga 0.82 As channel layer built on a p-type GaAs, with a delta doping of thickness 1 nm has been analyze
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ff82837f940164867e88300a5e42c59a
https://doi.org/10.1109/mspct.2017.8363987
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5
Analysis of AlGaN/GaN high electron mobility transistor for high frequency application
Autor: Aminul Islam, Sudip Kundu, Anumita Sengupta, Subrangshu Chatterjee
Publikováno v: 2017 Devices for Integrated Circuit (DevIC).
This paper presents an AlGaN/GaN High Electron Mobility Transistor (HEMT) structure with SiNx surface passivation layer. A T-shaped gate is formed at the top of GaN cap layer. The structure is simulated with Sapphire substrate. Output characteristics
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3d3c8c90237b4b810e9a4fcaebff3520
https://doi.org/10.1109/devic.2017.8073935
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6
Performance comparison of AlGaN/GaN HFET with sapphire and 4H-SiC substrate
Autor: Anumita Sengupta, Aminul Islam
Publikováno v: 2017 Devices for Integrated Circuit (DevIC).
Characteristics of two AlGaN/GaN Heterojunction Field Effect Transistor (HFET) structures are studied in this paper. The structures are simulated with Sapphire and 4H-SiC substrates respectively. Output characteristics curve (Id-Ids), threshold volta
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8abe43a4fa31e7a40e3bebcffa5b3a02
https://doi.org/10.1109/devic.2017.8073934
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7
Analysis of Al0.22Ga0.78As/In0.18Ga0.82As/GaAs Pseudomorphic HEMT device with higher conductivity
Autor: Anumita Sengupta, Santashraya Prasad, Aminul Islam, Akshat Chitransh, Anushruti Priya, Shreya Moonka
Publikováno v: 2017 Devices for Integrated Circuit (DevIC).
In this paper, we have analyzed the DC & RF performance of a Pseudomorphic high electron mobility transistor (PHEMT) with an Al 0.22 Ga 0.78 As supply layer, In 0.18 Ga 0.82 As channel layer built on a p-type GaAs. Output characteristics curve (I d -
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7e3607a7b8cccaf3057cd19673213fcc
https://doi.org/10.1109/devic.2017.8073969
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8
Analysis of breakdown voltage of a field plated High Electron Mobility Transistor
Autor: Anumita Sengupta, Shreya Moonka, Aminul Islam, Anushruti Priya, Santashraya Prasad, Akshat Chitransh
Publikováno v: 2017 Devices for Integrated Circuit (DevIC).
This paper proposes a High Electron Mobility Transistor (HEMT) which analyzed using Silvaco ATLASTM Tools. The proposed device is an AlGaN/GaN HEMT with AlN acting as a spacer layer. The design also includes a field plated gate to increase the breakd
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b792e0b3f568b161ef89a38422975243
https://doi.org/10.1109/devic.2017.8073929
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9
Development of HEMT device with surface passivation for a low leakage current and steep subthreshold slope
Autor: Anumita Sengupta, Shreya Moonka, Santashraya Prasad, Anushruti Priya, Aminul Islam, Akshat Chitransh
Publikováno v: 2017 Devices for Integrated Circuit (DevIC).
A structure of AlGaN/AlN/GaN High Electron Mobility Transistor with surface passivation is proposed in this paper. AlN layer in the proposed structure acts as spacer layer in order to improve the Two Dimensional electron gas mobility formed at the Al
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0d7fa5787012c99ebca118d46a61e972
https://doi.org/10.1109/devic.2017.8073970
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