Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Anuj Madan"'
Autor:
Cor Claeys, Marc Meuris, Ronald D. Schrimpf, Anuj Madan, Shrinivas R. Kulkarni, B.K. Choi, John D. Cressler, Kenneth F. Galloway, Eddy Simoen, Daniel M. Fleetwood, Rajan Arora, En Xia Zhang, Jerome Mitard
Publikováno v:
IEEE Transactions on Nuclear Science. 57:1933-1939
The total-dose response of Ge p-MOSFETs and p+-n junction diodes is reported for devices fabricated with several process variations. Radiation-induced reduction of the on-off current ratio increases with halo-doping density. Increasing the number of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25f68c961d5495819e717ea68707848e
https://doi.org/10.1109/tns.2010.2043745
https://doi.org/10.1109/tns.2010.2043745
Autor:
Anuj Madan, Peter F. Cheng, Paul W. Marshall, R. Verma, L. Del Castillo, Ronald D. Schrimpf, Gregory G. Freeman, Edward P. Wilcox, Qingqing Liang, John D. Cressler, Rajan Arora
Publikováno v:
IEEE Transactions on Nuclear Science. 56:3256-3261
The mechanism for ionizing radiation damage in multi-finger SOI CMOS devices is presented for the first time. We analyzed the effects of shallow-trench isolation on ionizing radiation response of 65 nm Silicon-On-Insulator (SOI) CMOS technology. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1561f00b3c6672f271446f826ccb499a
https://doi.org/10.1109/tns.2009.2033998
https://doi.org/10.1109/tns.2009.2033998
Autor:
S.D. Phillips, Gregory G. Freeman, Qingqing Liang, John D. Cressler, Anuj Madan, Paul W. Marshall
Publikováno v:
IEEE Transactions on Nuclear Science. 56:1914-1919
The effects of 63 MeV proton irradiation on 65nm Silicon-On-Insulator (SOI) CMOS technology are presented for the first time. The radiation response of the CMOS devices was investigated up to an equivalent total gamma dose of 4.1 Mrad (SiO2). We anal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e7f5e296eea48c145db59624f0fecd18
https://doi.org/10.1109/tns.2009.2014064
https://doi.org/10.1109/tns.2009.2014064
Publikováno v:
Solid-State Electronics. 53:901-904
The low-frequency noise and its spatial origin in strained Si/SiGe n-MODFETs with f MAX > 200 GHz is investigated for high-performance analog and mixed-signal applications. The dependence of the low-frequency noise response on two major device design
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07235622b3da3812c323390ea2f3e83f
https://doi.org/10.1016/j.sse.2009.04.024
https://doi.org/10.1016/j.sse.2009.04.024
Autor:
R.M. Diestelhorst, John R. Williams, Steven J. Koester, John D. Cressler, Daniel M. Fleetwood, A. Appaswamy, Paul W. Marshall, Tamara Isaacs-Smith, Bongim Jun, Anuj Madan, Ronald D. Schrimpf
Publikováno v:
IEEE Transactions on Nuclear Science. 54:2251-2256
The radiation tolerance of strained Si/SiGe n-MODFETs is investigated, using 10 keV X-rays, 63 MeV high energy protons, and 4 MeV low energy protons. The effects of radiation exposure on two major device design parameters (LSD and LG) in T-gate Si/Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01e198e34257abc885af0db1eb76237f
https://doi.org/10.1109/tns.2007.907871
https://doi.org/10.1109/tns.2007.907871
Autor:
N. Balasubramanian, Lai-Yin Wong, King-Jien Chui, Kah-Wee Ang, Ming-Fu Li, Yee-Chia Yeo, Anuj Madan, Ganesh S. Samudra, Chih-Hang Tung
Publikováno v:
IEEE Electron Device Letters. 28:509-512
Strained p-MOSFETs with silicon-germanium (SiGe) source and drain (S/D) stressors were fabricated on thin-body silicon-on-insulator (SOI) substrate using a novel local oxidation or Ge condensation technique. By directly growing SiGe on the S/D region
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::693623ea0db2f974589a2dacc18be846
https://doi.org/10.1109/led.2007.896802
https://doi.org/10.1109/led.2007.896802
Autor:
G. Vizkelethy, Robert Eddy, John D. Cressler, Cheryl J. Marshall, Kirby Kruckmeyer, Jeff A. Babcock, Greg Cestra, Benyong Zhang, Edward P. Wilcox, Peng Cheng, Anuj Madan, S.D. Phillips, Tushar Thrivikraman, Paul W. Marshall
Publikováno v:
IEEE Transactions on Nuclear Science.
We report heavy-ion microbeam and total dose data for a new complementary (npn + pnp) SiGe on thick-film SOI technology. Measured transient waveforms from heavy-ion strikes indicate a significantly shortened single-event-induced transient current, wh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e65fbf655e067c4996bdd66942c6b917
https://doi.org/10.1109/tns.2010.2085014
https://doi.org/10.1109/tns.2010.2085014
Publikováno v:
2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
The utilization of inverse-mode operation of the SiGe HBT in a single-pole, single-throw RF switch designed for high-linearity and high-power handling applications is investigated for the first time. By swapping the base-emitter junction with base-co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1039ef1eb7d74a92de323e896aafb96f
https://doi.org/10.1109/bipol.2010.5667960
https://doi.org/10.1109/bipol.2010.5667960
Autor:
Anuj Madan, Akil K. Sutton, Rajan Arora, John D. Cressler, Kurt A. Moen, Ronald D. Schrimpf, En Xia Zhang, Hasan M. Nayfeh, Daniel M. Fleetwood
Publikováno v:
2010 IEEE International Integrated Reliability Workshop Final Report.
We report the hot carrier reliability (HCR) of 45-nm SOI CMOS technology. Body contacted devices are shown to be more reliable than floating-body devices. Two different body-contacting schemes are investigated (T-body and notched T- body). The effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3228c9ccab758d895dd2996ac9263f2f
https://doi.org/10.1109/iirw.2010.5706486
https://doi.org/10.1109/iirw.2010.5706486
Publikováno v:
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).
We present measured results and analysis from high-power testing of three different X-band SiGe HBT LNAs. The custom measurement setup allowed high RF power (up to 32 dBm) to be applied to the input of the LNAs for 400 sec. During the stressing, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19173878ea24dd706f2e3306323d4a73
https://doi.org/10.1109/smic.2010.5422968
https://doi.org/10.1109/smic.2010.5422968