Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Antti Rahtu"'
Publikováno v:
ECS Transactions. 1:131-135
Niobium nitride NbN and niobium silicon nitride Nb(Si)N were deposited by Atomic Layer Deposition (ALD) from niobium pentachloride NbCl5, silicon tetrachloride SiCl4, and ammonia NH3. It was shown that low resistivity NbN can be more readily processe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f522e2ac5b92882abec3a19062f2d65
https://doi.org/10.1149/1.2209338
https://doi.org/10.1149/1.2209338
Autor:
Antti Rahtu, Markku Leskelä, Timo Hatanpää, Mikko Ritala, Marko Vehkamäki, Raija Matero, Suvi Haukka, Marko Tuominen
Publikováno v:
ECS Transactions. 1:137-141
BaTiO3 films were deposited onto 200 mm silicon wafers by Atomic Layer Deposition (ALD) from barium bis(tris(tert-butyl) cyclopentadienyl) Ba(tBu3CpH2)2, titanium methoxide Ti(OMe)4 and water H2O. The films were characterized for thickness uniformity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae85e412c57dd833cd87542deec44906
https://doi.org/10.1149/1.2209339
https://doi.org/10.1149/1.2209339
Autor:
Antti Rahtu, Kaupo Kukli, Markku Leskelä, Paul R. Chalker, Mikko Ritala, Helen C. Aspinall, Richard J. Potter, Anthony C. Jones
Publikováno v:
Materials Science and Engineering: B. 118:97-104
Lanthanide, or rare-earth oxides are currently being investigated as alternatives to SiO 2 as the dielectric insulating layer in sub-0.1 μm CMOS technology. Metalorganic chemical vapour deposition (MOCVD) and atomic layer deposition (ALD) are promis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8eaf1292c17d38ca56e103f8c6b7c5d1
https://doi.org/10.1016/j.mseb.2004.12.081
https://doi.org/10.1016/j.mseb.2004.12.081
In Situ Reaction Mechanism Studies on the Atomic Layer Deposition of Al2O3 from (CH3)2AlCl and Water
Publikováno v:
Langmuir. 21:3498-3502
Reaction mechanisms between dimethylaluminum chloride and deuterated water in the atomic layer deposition (ALD) of Al2O3 were studied at 150-400 degrees C using a quartz crystal microbalance (QCM) and a quadrupole mass spectrometer (QMS). The observe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f9d0a0cbe18cc94be4acefb1909355d5
https://doi.org/10.1021/la047153a
https://doi.org/10.1021/la047153a
Publikováno v:
Chemical Vapor Deposition. 10:143-148
Titanium dioxide thin films were grown by atomic layer deposition (ALD) at 200–400 °C from a new titanium precursor, titanium tetramethoxide, and water. As compared with other titanium alkoxides studied earlier, titanium methoxide shows the highes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de524ba130d9b6c5c164d40810e6a643
https://doi.org/10.1002/cvde.200306289
https://doi.org/10.1002/cvde.200306289
Autor:
Anthony C. Jones, Antti Rahtu, Mikko Ritala, Markku Leskelä, Helen C. Aspinall, Kaupo Kukli, Paul R. Chalker, Richard J. Potter
Publikováno v:
J. Mater. Chem.. 14:3101-3112
A range of high-permittivity (κ) dielectric oxides are currently being investigated as alternatives to SiO2 as the dielectric insulating layer in sub-0.1 μm CMOS technology. Metalorganic chemical vapour deposition (MOCVD) and atomic layer depositio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7efc01791932cd58ea48d42488ee77e0
https://doi.org/10.1039/b405525j
https://doi.org/10.1039/b405525j
Autor:
Antti Rahtu, Mikko Ritala
Publikováno v:
Journal of Materials Chemistry. 12:1484-1489
Reaction mechanisms in the zirconium chloride–water atomic layer deposition (ALD) process have been studied with a quartz crystal microbalance (QCM) and quadrupole mass spectrometer (QMS) at 250–500 °C. The only observed reaction byproduct was H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0bdadfedda7054ee8d24f0077cf5156
https://doi.org/10.1039/b109846b
https://doi.org/10.1039/b109846b
Publikováno v:
Chemistry of Materials. 14:281-287
Surface reactions in the atomic layer deposition (ALD) of TiN and Ti(Al)N films from titanium tetrachloride (TiCl4), trimethylaluminum (Al(CH3)3), and deuterated ammonia (ND3) were studied by using a mass spectrometer to determine the amounts of reac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71985b76c94471c222ce7c36075375c1
https://doi.org/10.1021/cm011150r
https://doi.org/10.1021/cm011150r
Publikováno v:
Chemistry of Materials. 13:4506-4511
The atomic layer deposition (ALD) of TiO2 from TiCl4 and D2O at 150−400 °C was studied in situ with a quadrupole mass spectrometer (QMS) and a quartz crystal microbalance (QCM). The ALD growth proceeds via exchange reactions on the film surface. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31c9c217706341e72494a7e9590b8614
https://doi.org/10.1021/cm011046+
https://doi.org/10.1021/cm011046+
Publikováno v:
Langmuir. 17:6506-6509
Reaction mechanisms in the atomic layer deposition of Al2O3 from Al(CH3)3 and water were studied with a quartz crystal microbalance at 150−350 °C and with a quadrupole mass spectrometer at 150−400 °C. The growth rate was the highest at 250 °C.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd018df3f6eaab22e87764e61eaadfff
https://doi.org/10.1021/la010103a
https://doi.org/10.1021/la010103a