Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Antoon M. H. Tombeur"'
Autor:
H. Pohlmann, M. Dumling, W. Schnitt, Antoon M. H. Tombeur, Henricus G. R. Maas, J.-H. Fock, J.R. Haartsen, Ronald Dekker, Theodorus Martinus Michielsen
Publikováno v:
2006 Bipolar/BiCMOS Circuits and Technology Meeting.
A simple and robust technology for the transfer of circuits, processed on normal silicon wafers, to alternative substrates is presented. Substrate transfer technology (STT) is a post-processing technology based on adhesive bonding using a UV curing a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ec89b883fb268699472790836c4b98d
https://doi.org/10.1109/bipol.2006.311141
https://doi.org/10.1109/bipol.2006.311141
Autor:
Theodorus Martinus Michielsen, J.-H. Fock, M. Dumling, W. Schnitt, C. Jonville, Antoon M. H. Tombeur, H. Pohlmann, Ronald Dekker, O. Gourhant
Publikováno v:
Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005..
In CIRCONFLEX technology, circuits fabricated on SOI wafers are transferred to a 10 /spl mu/m thick polyimide carrier. The highly flexible circuits remain defect free even after bending to radii of less than 1 mm, making them attractive for chip-in-p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08c61f1731e404840bb25606d0384527
https://doi.org/10.1109/bipol.2005.1555192
https://doi.org/10.1109/bipol.2005.1555192
Autor:
Antoon M. H. Tombeur, M. Bernard, Francois J. Seneschal, V. Fillatre, M. Notten, J. van Sinderen, Hans Brekelmans, E. Stikvoort, O. Crand, F. Mounaim, F. Singh
Publikováno v:
2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC..
A single-chip digital cable tuner with an active splitter for cable data modems and set-top boxes is realized in a 0.5/spl mu/m, 30GHz BiCMOS technology. The IC employs a single down-conversion, low-IF architecture and can receive signals in the 48-8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2d7ec11b6a87b3c593abab90750c8a8
https://doi.org/10.1109/isscc.2003.1234379
https://doi.org/10.1109/isscc.2003.1234379
Autor:
Antonius G. Wagemans, J. van Sinderen, A. Hoogstraate, Henricus G. R. Maas, Antoon M. H. Tombeur, Peter Baltus, Ronald Dekker
Publikováno v:
IEEE Journal of Solid-State Circuits, 33(12), 2074-2079. Institute of Electrical and Electronics Engineers
In this paper, first results of radio-frequency (RF) circuits processed in a novel silicon bipolar technology called silicon on anything (SOA) are presented. This technology was developed with the application of low-power, high-frequency circuits in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c294d26fed6109a33fc0a56b17f9225
https://research.tue.nl/nl/publications/56f4f411-826a-47da-84f9-eeed6421861d
https://research.tue.nl/nl/publications/56f4f411-826a-47da-84f9-eeed6421861d
