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pro vyhledávání: '"Antonius G. Wagemans"'
Autor:
Antonius G. Wagemans, J. van Sinderen, A. Hoogstraate, Henricus G. R. Maas, Antoon M. H. Tombeur, Peter Baltus, Ronald Dekker
Publikováno v:
IEEE Journal of Solid-State Circuits, 33(12), 2074-2079. Institute of Electrical and Electronics Engineers
In this paper, first results of radio-frequency (RF) circuits processed in a novel silicon bipolar technology called silicon on anything (SOA) are presented. This technology was developed with the application of low-power, high-frequency circuits in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c294d26fed6109a33fc0a56b17f9225
https://research.tue.nl/nl/publications/56f4f411-826a-47da-84f9-eeed6421861d
https://research.tue.nl/nl/publications/56f4f411-826a-47da-84f9-eeed6421861d
