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Autor:
Roman Baburske, Antonio Vellei, F. Pfirsch, H.-J. Schulze, Haybat Itani, Alexander Philippou, Franz Josef Niedernostheide, Christian Jaeger, Johannes Georg Laven
Publikováno v:
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
A failure mechanism in the edge termination of a 1200V IGBT during overcurrent turn-off is studied with simulations and verified by experiments. The position of the destruction in the experiment can be correlated to the formation of a critical filame