Výsledky vyhledávání - "Antonio T. Lucero"

Akademický článek

Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Autor: Yong Chan Jung, Su Min Hwang, Dan N. Le, Aswin L. N. Kondusamy, Jaidah Mohan, Sang Woo Kim, Jin Hyun Kim, Antonio T. Lucero, Arul Ravichandran, Harrison Sejoon Kim, Si Joon Kim, Rino Choi, Jinho Ahn, Daniel Alvarez, Jeff Spiegelman, Jiyoung Kim

Publikováno v: Materials, Vol 13, Iss 15, p 3387 (2020)

Aluminum nitride (AlN) thin films were grown using thermal atomic layer deposition in the temperature range of 175–350 °C. The thin films were deposited using trimethyl aluminum (TMA) and hydrazine (N2H4) as a metal precursor and nitrogen source,

Externí odkaz: https://doaj.org/article/7beaa3f9330b4b4da0d7e2dc2ef582cf

Zobrazit plný text záznamu

Akademický článek

Atomic Layer Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks

Autor: Xin Meng, Young-Chul Byun, Harrison S. Kim, Joy S. Lee, Antonio T. Lucero, Lanxia Cheng, Jiyoung Kim

Publikováno v: Materials, Vol 9, Iss 12, p 1007 (2016)

With the continued miniaturization of devices in the semiconductor industry, atomic layer deposition (ALD) of silicon nitride thin films (SiNx) has attracted great interest due to the inherent benefits of this process compared to other silicon nitrid

Externí odkaz: https://doaj.org/article/d76035ab71fa49ca8cd48c91dd258dc7

Zobrazit plný text záznamu

Ambipolar Gate Modulation Technique for the Reduction of Offset and Flicker Noise in Graphene Hall-Effect Sensors

Autor: Arup Polley, Antonio T. Lucero, Varun Kumar, Archana Venugopal, Jiyoung Kim, Lanxia Cheng, Arul Vigneswar Ravichandran, Luigi Colombo, Robert R. Doering

Publikováno v: IEEE Sensors Journal. 21:25675-25686

There is a constant need for Hall-effect magnetic sensors with lower noise and lower offset for the high accuracy analog applications driven primarily by industrial and automotive markets, for example, high dynamic range current sensing for battery m

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d075ef5b47b56d492ea8957e0c1940b8
https://doi.org/10.1109/jsen.2021.3115996

Zobrazit plný text záznamu

Extremely Low Leakage Threshold Switch with Enhanced Characteristics via Ag Doping on Polycrystalline ZnO Fabricated by Facile Electrochemical Deposition for an X-Point Selector

Autor: Jaidah Mohan, Akshay Sahota, Si Joon Kim, Jang-Sik Lee, Harrison Sejoon Kim, Min-Ji Kim, Yong Chan Jung, Antonio T. Lucero, Jiyoung Kim, Rino Choi

Publikováno v: ACS Applied Electronic Materials. 3:2309-2316

Leakage current, that causes interferences in the read/write operation, arising from neighboring unselected or half-selected memory cells is considered as one of the main hurdles to be overcome to ...

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2c670b86dd70cf72d7431292f666d4e0
https://doi.org/10.1021/acsaelm.1c00197

Zobrazit plný text záznamu

Atomic Layer Deposition of Layered Boron Nitride for Large-Area 2D Electronics

Autor: Moon J. Kim, Arul Vigneswar Ravichandran, Antonio T. Lucero, Woong Choi, Hui Zhu, Jaebeom Lee, Zifan Che, Jiyoung Kim, Archana Venugopal, Lanxia Cheng, Robert M. Wallace, Luigi Colombo, Jaidah Mohan, Massimo Catalano

Publikováno v: ACS Applied Materials & Interfaces. 12:36688-36694

Hexagonal boron nitride (h-BN) has been considered a promising dielectric for two-dimensional (2D) material-based electronics due to its atomically smooth and charge-free interface with an in-plane lattice constant similar to that of graphene. Here,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6934698ed2cd4820027ad44722337a45
https://doi.org/10.1021/acsami.0c07548

Zobrazit plný text záznamu

Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper

Autor: Byung Keun Hwang, Gary Goodman, Lanxia Cheng, Harrison Sejoon Kim, Aswin L. N. Kondusamy, Xin Meng, Antonio T. Lucero, Si Joon Kim, Jiyoung Kim, Alan S. Wan, Su Min Hwang, Young-Chul Byun, Telgenhoff Michael D, Joy S. Lee, Robert M. Wallace

Publikováno v: ACS Applied Materials & Interfaces. 10:44825-44833

Correlations between physical properties linking film quality with wet etch rate (WER), one of the leading figures of merit, in plasma-enhanced atomic layer deposition (PEALD) grown silicon nitride (SiNx) films remain largely unresearched. Achieving

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::23472c32f3fe282a6779bcd299a81952
https://doi.org/10.1021/acsami.8b15291

Zobrazit plný text záznamu

Robust SiNx/GaN MIS-HEMTs With Crystalline Interfacial Layer Using Hollow Cathode PEALD

Autor: Young-Chul Byun, Arul Vigneswar Ravichandran, Jae-Gil Lee, Jiyoung Kim, Chadwin D. Young, Min-Woo Ha, Si Joon Kim, Antonio T. Lucero, Jaebeom Lee, Xin Meng

Publikováno v: IEEE Electron Device Letters. 39:1195-1198

In this letter, we report gallium nitride-based metal-insulator-semiconductor high-electron-mobility transistors (GaN MIS-HEMTs) with a 16-nm-thick silicon nitride (SiN x ) gate insulator and surface passivation layer grown using low-temperature (300

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e587262816288bb1b9eb11b8d1a0f795
https://doi.org/10.1109/led.2018.2849100

Zobrazit plný text záznamu

Wafer Scale Graphene Field Effect Transistors on Thin Thermal Oxide

Autor: Jiyoung Kim, Luigi Colombo, Arul Vigneswar Ravichandran, Jaebeom Lee, Archana Venugopal, Arup Polley, Antonio T. Lucero, Lanxia Cheng, Chadwin D. Young

Publikováno v: ECS Transactions. 86:51-57

Graphene, an allotrope of carbon, shows ambipolar transfer characteristics with a linear dispersion relation where the conduction and valence band meets at the Dirac point 1. Owing to an absence of bandgap, it is not feasible to use graphene in logic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cdf487083f0219184f79cde60f9b36b9
https://doi.org/10.1149/08602.0051ecst

Zobrazit plný text záznamu

Hollow Cathode Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using Pentachlorodisilane

Autor: Jiyoung Kim, Jeanette Young, Su Min Hwang, Young-Chul Byun, Telgenhoff Michael D, Xiaobing Zhou, Joy S. Lee, Byung Keun Hwang, Xin Meng, Harrison Sejoon Kim, Antonio T. Lucero

Publikováno v: ACS Applied Materials & Interfaces. 10:14116-14123

In this work, a novel chlorodisilane precursor, pentachlorodisilane (PCDS, HSi2Cl5), was investigated for the growth of silicon nitride (SiNx) via hollow cathode plasma-enhanced atomic layer deposition (PEALD). A well-defined self-limiting growth beh

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de3fb5ad171b2a8c77318cc4789c6c5c
https://doi.org/10.1021/acsami.8b00723

Zobrazit plný text záznamu

Performance Enhancement via Incorporation of ZnO Nanolayers in Energetic Al/CuO Multilayers

Autor: Yves J. Chabal, Antonio T. Lucero, Iman Abdallah, Carole Rossi, Lorena Marín, Yuzhi Gao, Jiyoung Kim, Maxime Vallet, Christophe Tenailleau, Alain Estève, Bénédicte Warot-Fonrose

Publikováno v: Langmuir
Langmuir, 2017, 33 (41), pp.11086-11093. ⟨10.1021/acs.langmuir.7b02964⟩
Langmuir, American Chemical Society, 2017, 33 (41), pp.11086-11093. ⟨10.1021/acs.langmuir.7b02964⟩

International audience; Al/CuO energetic structure are attractive materials due to their high thermal output and propensity to produce gas. They are widely used to bond components or as next generation of MEMS igniters. In such systems, the reaction

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ed5c28c4142b60200442ea791e810bba
https://doi.org/10.1021/acs.langmuir.7b02964

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání