Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Antonio J. García‐Loureiro"'
Autor:
Celia Outes, Eduardo F. Fernández, Natalia Seoane, Florencia Almonacid, Antonio J. García‐Loureiro
Publikováno v:
IET Renewable Power Generation, Vol 16, Iss 8, Pp 1577-1588 (2022)
Abstract Modelling the current–voltage (I–V) characteristics of photovoltaic (PV) devices is important for understanding their behaviour and potential. Typically, the single exponential model (SEM) is used because of its simplicity and accuracy.
Externí odkaz:
https://doaj.org/article/98089dc952324fc19f34ed35d11475da
Publikováno v:
Minerva. Repositorio Institucional de la Universidad de Santiago de Compostela
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In the current technology node, purely classical numerical simulators lack the precision needed to obtain valid results. At the same time, the simulation of fully quantum models can be a cumbersome task in certain studies such as device variability a
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 469-475 (2021)
The gate-all-around nanowire FET (GAA NW FET) is one of the most promising architectures for the next generation of transistors as it provides better performance than current mass-produced FinFETs, but it has been proven to be strongly affected by va
Externí odkaz:
https://doaj.org/article/2c8d9fa3f5d749119a32eb57395a7c4a
Autor:
Daniel Nagy, Gabriel Espineira, Guillermo Indalecio, Antonio J. Garcia-Loureiro, Karol Kalna, Natalia Seoane
Publikováno v:
IEEE Access, Vol 8, Pp 53196-53202 (2020)
Nanosheet (NS) and nanowire (NW) FET architectures scaled to a gate length (LG) of 16 nm and below are benchmarked against equivalent FinFETs. The device performance is predicted using a 3D finite element drift-diffusion/Monte Carlo simulation toolbo
Externí odkaz:
https://doaj.org/article/a31dac95596644cb9af7c7247f5ee306
Autor:
Daniel Nagy, Guillermo Indalecio, Antonio J. Garcia-Loureiro, Gabriel Espineira, Muhammad A. Elmessary, Karol Kalna, Natalia Seoane
Publikováno v:
IEEE Access, Vol 7, Pp 12790-12797 (2019)
Variability of semiconductor devices is seriously limiting their performance at nanoscale. The impact of variability can be accurately and effectively predicted by computer-aided simulations in order to aid future device designs. Quantum corrected (Q
Externí odkaz:
https://doaj.org/article/333d34e54e304286a6e662d115e50c35
Autor:
Daniel Nagy, Guillermo Indalecio, Antonio J. Garcia-Loureiro, Muhammad A. Elmessary, Karol Kalna, Natalia Seoane
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 332-340 (2018)
Performance, scalability, and resilience to variability of Si SOI FinFETs and gate-all-around (GAA) nanowires (NWs) are studied using in-house-built 3-D simulation tools. Two experimentally based devices, a 25-nm gate length FinFET and a 22-nm GAA NW
Externí odkaz:
https://doaj.org/article/edf10bca70f14f7dbb5c1f513b0fb80b
Autor:
Guillermo Indalecio, Antonio J. Garcia-Loureiro, Muhammad A. Elmessary, Karol Kalna, Natalia Seoane
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 601-610 (2018)
Standard analysis of variability sources in nanodevices lacks information about the spatial influence of the variability. However, this spatial information is paramount for the industry and academia to improve the design of variability-resistant arch
Externí odkaz:
https://doaj.org/article/caf875cd78c84318ad4d4b5049fe85a8
Autor:
Daniel Nagy, Manuel Aldegunde, Muhammad A Elmessary, Antonio J García-Loureiro, Natalia Seoane, Karol Kalna
Publikováno v:
Journal of Physics: Condensed Matter; 4/11/2018, Vol. 30 Issue 14, p1-1, 1p