Zobrazeno 1 - 10
of 405
pro vyhledávání: '"Antoniadis, Dimitri"'
Scaling down of the CMOS technology requires thinner gate dielectric to maintain high performance. However, due to the depletion of poly-Si gate, it is difficult to reduce the gate thickness further especially for sub-65 nm CMOS generation. Fully sil
Externí odkaz:
http://hdl.handle.net/1721.1/7371
Autor:
Jin, Lijuan, Pey, Kin Leong, Choi, Wee Kiong, Fitzgerald, Eugene A., Antoniadis, Dimitri A., Chi, D.Z.
The effect of Ni and Ni(Pt) alloy with ~5 and 10 at. % Pt on the agglomeration and Ge out-diffusion in Nickel germanosilicide formed on Si₀.₇₅Ge₀.₂₅(100) has been studied. A remarkable improvement in the agglomeration behavior with increa
Externí odkaz:
http://hdl.handle.net/1721.1/3825
Autor:
Teo, L.W., Ho, Van Tai, Tay, M.S., Choi, Wee Kiong, Chim, Wai Kin, Antoniadis, Dimitri A., Fitzgerald, Eugene A.
The effect of germanium (Ge) concentration and the rapid thermal oxide (RTO) layer thickness on the nanocrystal formation and charge storage/retention capability of a trilayer metal-insulator-semiconductor device was studied. We found that the RTO an
Externí odkaz:
http://hdl.handle.net/1721.1/3799
Autor:
Kan, Eric Win Hong, Choi, Wee Kiong, Chim, Wai Kin, Antoniadis, Dimitri A., Fitzgerald, Eugene A.
Wet thermal oxidations of polycrystalline Si₀.₅₄Ge₀.₄₆ films at 600°C for 30 and 50 min were carried out. A stable mixed oxide was obtained for films that were oxidized for 50 min. For film oxidized for 30 min, however, a mixed oxide wit
Externí odkaz:
http://hdl.handle.net/1721.1/3798
Autor:
Kan, Eric Win Hong, Leoy, C.C., Choi, Wee Kiong, Chim, Wai Kin, Antoniadis, Dimitri A., Fitzgerald, Eugene A.
In this work, we studied the possibility of synthesizing nanocrystalline germanium (Ge) via dry and wet oxidation of both amorphous and polycrystalline Si₀.₅₄Ge₀.₄₆ films. In dry oxidation, Ge was rejected from the growing SiO₂ forming
Externí odkaz:
http://hdl.handle.net/1721.1/3722
Autor:
Jin, Lijuan, Pey, Kin Leong, Choi, Wee Kiong, Fitzgerald, Eugene A., Antoniadis, Dimitri A., Pitera, Arthur J., Lee, Minjoo L., Chi, D.Z.
The interfacial reaction of Ni with Si, Si₀.₇₅Ge₀.₂₅, and Ge at 400°C has been investigated. A uniform epitaxial NiSi film was obtained at 400°C for Ni-Silicidation on Si using rapid thermal annealing method. Similarly, uniform film of
Externí odkaz:
http://hdl.handle.net/1721.1/3724
Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future generations of CMOS technology due to the lack of performance increase with scaling. Compressively strained Ge-rich alloys with high hole mobilities can als
Externí odkaz:
http://hdl.handle.net/1721.1/3726
Autor:
Teo, L.W., Ho, Van Tai, Tay, M.S., Lei, Y., Choi, Wee Kiong, Chim, Wai Kin, Antoniadis, Dimitri A., Fitzgerald, Eugene A.
A method of synthesizing and controlling the size of germanium nanocrystals is developed. A tri-layer metal-insulator-semiconductor (MIS) memory device structure comprising of a thin (~5nm) silicon dioxide (SiO₂) layer grown using rapid thermal oxi
Externí odkaz:
http://hdl.handle.net/1721.1/3712
Autor:
Cheng, Zhiyuan, Jung, Jongwan, Lee, Minjoo L., Nayfeh, Hasan, Pitera, Arthur J., Hoyt, Judy L., Fitzgerald, Eugene A., Antoniadis, Dimitri A.
Two SiGe-on-insulator (SGOI) structures for CMOS application are presented: surface-channel strained-Si on SGOI (SSOI) and dual-channel SGOI structures. Comparisons between two structures are made from both device performance and CMOS process point o
Externí odkaz:
http://hdl.handle.net/1721.1/3671
Autor:
Lee, Minjoo L., Leitz, Christopher W., Cheng, Zhiyuan, Antoniadis, Dimitri A., Fitzgerald, Eugene A.
We have fabricated strained Ge channel p-type metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Siâ.âGeâ.â virtual substrates. The poor interface between silicon dioxide (SiOâ) and the Ge channel was eliminate
Externí odkaz:
http://hdl.handle.net/1721.1/3989