Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Anton van Oosten"'
Publikováno v:
2022 International Workshop on Advanced Patterning Solutions (IWAPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::570cdbc775e467ef0941f1104eb7bc4d
https://doi.org/10.1109/iwaps57146.2022.9972242
https://doi.org/10.1109/iwaps57146.2022.9972242
Autor:
Bartosz Bilski, Anton van Oosten, Paul Graeupner, Jan van Schoot, Claire van Lare, Joerg Zimmermann, Eelco van Setten, Friso Wittebrood, Jo Finders, Natalia Davydova, Gerardo Bottiglieri, John McNamara, Gijsbert Rispens
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2021.
To enable cost-effective shrink of future devices, a new High-NA EUV platform is being developed. The High-NA EUV scanner employs a novel POB design concept with 0.55NA that enables 8nm HP resolution and a high throughput. In this paper we will discu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7638bfaebd488519aaee4a93a959efc8
https://doi.org/10.1117/12.2600965
https://doi.org/10.1117/12.2600965
Autor:
Anton van Oosten, Timon Fliervoet, Eelco van Setten, Joern-Holger Franke, Gerardo Bottiglieri, Rene Carpaij, Dong-Seok Nam, Fei Liu, Natalia Davydova, Vincent Wiaux, Joseph Zekry, John McNamara, Patrick P. Naulleau, Markus P. Benk, Ken Goldberg
Publikováno v:
Extreme Ultraviolet Lithography 2020.
The next-generation high-NA EUV scanner is being developed to enable patterning beyond the 3-nm technology node. Design and development of the scanner are based on rigorous litho-simulations. It is important to verify key imaging simulation findings
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52b7865a00d92bb9a6d496972edee69d
https://doi.org/10.1117/12.2572846
https://doi.org/10.1117/12.2572846
Autor:
Junwei Wei, Patrick Wong, Roy Anunciado, Yongjun Wang, Fuming Wang, Hung Yu Tien, Stefan Hunsche, Peng Tang, Anton van Oosten, Bram Slachter, Koen van Ingen Schenau, Fang Wei, Antonio Corradi
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXII.
We present an experimental study of pattern variability and defectivity, based on a large data set with more than 112 million SEM measurements from an HMI high-throughput e-beam tool. The test case is a 10nm node SRAM via array patterned with a DUV i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f015501d0b352076031852b91b73a25d
https://doi.org/10.1117/12.2297603
https://doi.org/10.1117/12.2297603
Autor:
Jo Finders, Yasin Ekinci, Marieke Meeuwissen, Gijsbert Rispens, Paul Derks, Sander Frederik Wuister, Oktay Yildirim, Michaela Vockenhuber, Anton van Oosten, Elizabeth Buitrago, Rik Hoefnagels
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet (EUV) lithography with 13.5 nm wavelength is the main option for sub-10nm patterning in the semiconductor industry. We report improvements in resist performance towards EUV high volume manufacturing. A local CD uniformity (LCDU) m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cb47a3abf776abd23cb15e22fa436c2
https://doi.org/10.1117/12.2257415
https://doi.org/10.1117/12.2257415
Autor:
Lieve Van Look, Vicky Philipsen, Eric Hendrickx, Natalia Davydova, Friso Wittebrood, Robert de Kruif, Anton van Oosten, Junji Miyazaki, Timon Fliervoet, Jan van Schoot, Jens Timo Neumann
Publikováno v:
SPIE Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67c146b1d6cb778f07f10793a77a76a9
https://doi.org/10.1117/12.2203124
https://doi.org/10.1117/12.2203124
Autor:
Timon Fliervoet, Eric Hendrickx, Jan van Schoot, Vicky Philipsen, Junji Miyazaki, Natalia Davydova, Robert de Kruif, Friso Wittebrood, Lieve Van Look, Jens Timo Neumann, Anton van Oosten
Publikováno v:
SPIE Proceedings.
Traditional EUV masks, with absorber on top of the multi-layer (ML) mirror, generally suffer from mask 3D effects: H/V shadowing, best focus shifts through pitch and pattern shifts through focus. These effects reduce the overlapping process window, c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad988ad3bae432c281208831575490ba
https://doi.org/10.1117/12.2195329
https://doi.org/10.1117/12.2195329
Autor:
Jens Timo Neumann, Natalia Davydova, Geert Vandenberghe, Friso Wittebrood, Lieve Van Look, Vicky Philipsen, Junji Miyazaki, Robert de Kruif, Eric Hendrickx, Anton van Oosten, Jan van Schoot, Timon Fliervoet
Publikováno v:
Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII.
Traditional EUV masks, with absorber on top of the multi-layer (ML) mirror, generally suffer from mask 3D effects: H/V shadowing, best focus shifts through pitch and pattern shifts through focus. These effects reduce the overlapping process window, c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ccd4cc7cf9c9c939a77df1249c87d8b
https://doi.org/10.1117/12.2197213
https://doi.org/10.1117/12.2197213
Autor:
Anton van Oosten, Noreen Harned, Wei Liu, Mark van de Kerkhof, Mircea Dusa, Jiong Jiang, Youri van Dommelen, Natalia Davydova, Hua-yu Liu, Frank A. J. M. Driessen, John Zimmerman, Hoyoung Kang, Robert de Kruif, Eelco van Setten, Sang-In Han, Brid Connolly, Dorothe Oorschot, Ad Lammers
Publikováno v:
SPIE Proceedings.
EUVL requires the use of reflective optics including a reflective mask. The mask consists of an absorber layer pattern on top of a reflecting multilayer, tuned for 13.53 nm. The EUVL mask is a complex optical element with many parameters contributing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::806aac4ad5e0ea104664af1fefa905c9
https://doi.org/10.1117/12.896816
https://doi.org/10.1117/12.896816
Autor:
Anton van Oosten, Peter Nikolsky, Robert John Socha, Luoqi Chen, Stephen Hsu, Alek C. Chen, Hong Chen, Tsann-Bim Chiou
Publikováno v:
Optical Microlithography XXI.
When using the most advanced water-based immersion scanner at the 32nm node half-pitch, the image resolution will be below the k1 limit of 0.25. If EUV technology is not ready for mass production, double patterning technology (DPT) is one of the solu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71573f1dc4e16bd767fc348eb7991050
https://doi.org/10.1117/12.773107
https://doi.org/10.1117/12.773107