Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Anton V. Golovanov"'
Publikováno v:
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII KHIMIYA KHIMICHESKAYA TEKHNOLOGIYA. 63:49-56
An influence of the conventional planar technology of the semiconductor surface treatment operations (photolithography, plasma-chemical surface cleaning in radio frequency low-pressure oxygen discharge, and thin metal films growth) on monocrystalline
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::852f60bc3a12ff89348b462b533f3164
https://doi.org/10.6060/ivkkt.20206311.6232
https://doi.org/10.6060/ivkkt.20206311.6232
Autor:
N. V. Kornilov, V. S. Bormashov, Nikolay V. Luparev, M.S. Kuznetsov, Sergei G. Buga, A. P. Volkov, Vladimir Blank, S. A. Terent’ev, Anton V. Golovanov, S. A. Tarelkin, D. V. Teteruk
Publikováno v:
Inorganic Materials. 54:1469-1476
The temperature dependences of the specific resistance and Hall coefficient of high-quality synthetic boron-doped diamond single crystals grown via a high-pressure high-temperature method are studied. The concentration of acceptors in the (001) cut p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50d5f8789af85a8fcbcf3a9e45c3c60e
https://doi.org/10.1134/s0020168518150037
https://doi.org/10.1134/s0020168518150037
Autor:
N. V. Kornilov, S.A. Terentiev, Vladimir Blank, S. Yu. Troschiev, M.S. Kuznetsov, A. P. Volkov, S. A. Tarelkin, D. V. Teteruk, V. S. Bormashov, Anton V. Golovanov
Publikováno v:
Diamond and Related Materials. 84:41-47
We report here for the first time a fabrication of betavoltaic battery prototype consisting of 200 single conversion cells based on Schottky barrier diamond diodes which have been vertically stacked with ~24% 63Ni radioactive isotope. The maximum ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f33c4edd9ac1365d08c7405f9d820c0
https://doi.org/10.1016/j.diamond.2018.03.006
https://doi.org/10.1016/j.diamond.2018.03.006
Autor:
A. P. Volkov, N. V. Kornilov, M.S. Kuznetsov, D. D. Prikhodko, A. Buga, V. S. Bormashov, Anton V. Golovanov, S. A. Tarelkin, D. V. Teteruk
Thermal conductivity of single-crystal boron-doped diamonds (BDD) with ~ 2∙10¹⁹ cm⁻³ (~ 120 ppm) and 5∙10¹⁹ cm⁻³ (~ 300 ppm) boron content was studied by a steady-state method in a temperature range of 20–400. K. The obtained data w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::acbbb8a65d698bd260b2be3357167c50
http://dspace.nbuv.gov.ua/handle/123456789/167288
http://dspace.nbuv.gov.ua/handle/123456789/167288
Autor:
S.A. Terentiev, M.S. Kuznetsov, Anton V. Golovanov, S. A. Tarelkin, V. S. Bormashov, Sergei G. Buga, V.D. Blank, D. D. Prikhodko
Publikováno v:
Journal of Superhard Materials. 38:412-416
The heat capacity, Cp, of boron-doped single-crystal diamonds grown by the temperature gradient method was studied. The boron contents were < 1016, ~ 1018, and ~ 1020 cm–3. The heat capacity data for all tested crystals match well (within the measu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0163dd3c48839246a747a4119f90aca9
https://doi.org/10.3103/s1063457616060058
https://doi.org/10.3103/s1063457616060058
Autor:
A. P. Volkov, M.S. Kuznetsov, Anton V. Golovanov, D. D. Prikhodko, S. A. Tarelkin, D. V. Teteruk, Sergei G. Buga, V. S. Bormashov
Publikováno v:
MRS Communications. 6:71-76
Thermal conductivity of single-crystal boron-doped diamond (BDD) was studied in comparison with high-quality pure I la-type diamond in the temperature range from 20 to 400 K. Boron content in BDD was about 1019 cnr3 that is a typical value of p+ subs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab622e05e1e4d6a849898a541fb8a41e
https://doi.org/10.1557/mrc.2016.12
https://doi.org/10.1557/mrc.2016.12
Autor:
Anton V. Golovanov, Eugeniy Korostylev, M.S. Kuznetsov, S. A. Tarelkin, Sergey Yu. Troschiev, N. V. Kornilov, D. V. Teteruk, Sergei G. Buga, A. P. Volkov, D. D. Prikhodko, V. S. Bormashov
Publikováno v:
physica status solidi (a). 213:2492-2497
In order to improve the performance of betavoltaic converters based on synthetic IIb diamond Schottky structure, we performed comparative studies of converters with Al, Hf, Pt, and Au metals forming the Schottky barrier by means of the electron beam-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::967efc9634fde5bda82f0e9803df4c91
https://doi.org/10.1002/pssa.201533060
https://doi.org/10.1002/pssa.201533060
Autor:
Sergei A. Tarelkin, Anton V. Golovanov, V. S. Bormashov, Nikolay V. Luparev, Sergey Yu. Troschiev, Viktoriia S. Shcherbakova
Publikováno v:
physica status solidi (a). 218:2000206
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9d7d7881accb711758bc5462655d723
https://doi.org/10.1002/pssa.202000206
https://doi.org/10.1002/pssa.202000206
Autor:
S. A. Tarelkin, V. S. Bormashov, Nikolay S. Kukin, Sergei G. Buga, A. S. Gusev, Sergey Yu. Troshchiev, Dmitrii D. Prikhodko, Yuri V. Balakshin, Andrey A. Shemukhin, Stepan V. Bolshedvorskii, Anton V. Golovanov, Nikolai V. Luparev, Sergei D. Trofimov, N. I. Kargin, Vladimir Blank, Kirill N. Boldyrev, Alexey V. Akimov, S.A. Terentiev
Publikováno v:
Optical Materials Express. 10:198
Single NV centers in HPHT IIa diamond are fabricated by helium implantation through lithographic masks. The concentrations of created NV centers in different growth sectors of HPHT are compared quantitatively. It is shown that the purest {001} growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::156a4d99ba736e25b4f2f5954c5d4e75
https://doi.org/10.1364/ome.10.000198
https://doi.org/10.1364/ome.10.000198
Autor:
Sergei G. Buga, N. V. Kornilov, M.S. Kuznetsov, Anton V. Golovanov, S.A. Terentiev, V. S. Bormashov, Vladimir Blank, A. P. Volkov, S. A. Tarelkin, D. V. Teteruk
Publikováno v:
physica status solidi (a). 212:2621-2627
We developed and investigated the vertical diamond Schottky barrier diodes on large area IIb HPHT high quality substrates. The drift CVD layers with boron content of 1016 and 2 × 1017 cm−3 were made. The diodes possess an integral forward current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44ba0e67d79ea021788f1b80d9e437b0
https://doi.org/10.1002/pssa.201532213
https://doi.org/10.1002/pssa.201532213