Zobrazeno 1 - 10
of 51
pro vyhledávání: '"Anton Pershin"'
Autor:
Jakub Iwański, Krzysztof P. Korona, Mateusz Tokarczyk, Grzegorz Kowalski, Aleksandra K. Dąbrowska, Piotr Tatarczak, Izabela Rogala, Marta Bilska, Maciej Wójcik, Sławomir Kret, Anna Reszka, Bogdan J. Kowalski, Song Li, Anton Pershin, Adam Gali, Johannes Binder, Andrzej Wysmołek
Publikováno v:
npj 2D Materials and Applications, Vol 8, Iss 1, Pp 1-9 (2024)
Abstract Boron nitride exhibits various crystal structures. The subgroup of layered boron nitrides includes several polytypes such as hexagonal (hBN), Bernal (bBN), and rhombohedral (rBN) BN. The latter two are non-centrosymmetric, potentially leadin
Externí odkaz:
https://doaj.org/article/f162df4fb221428a8d4f08b6bb9c69ad
Autor:
Rohit Babar, Gergely Barcza, Anton Pershin, Hyoju Park, Oscar Bulancea Lindvall, Gergő Thiering, Örs Legeza, Jamie H. Warner, Igor A. Abrikosov, Adam Gali, Viktor Ivády
Publikováno v:
npj Computational Materials, Vol 10, Iss 1, Pp 1-9 (2024)
Abstract Point defect qubits in semiconductors have demonstrated their outstanding capabilities for high spatial resolution sensing generating broad multidisciplinary interest. Hexagonal boron nitride (hBN) hosting point defect qubits have recently o
Externí odkaz:
https://doaj.org/article/52cafc4b34d04b9fabd93afa7a69da86
Publikováno v:
npj 2D Materials and Applications, Vol 8, Iss 1, Pp 1-8 (2024)
Abstract Van der Waals structures present a unique opportunity for tailoring material interfaces and integrating photonic functionalities. By precisely manipulating the twist angle and stacking sequences, it is possible to elegantly tune and function
Externí odkaz:
https://doaj.org/article/483a6fc9c9144f0d821f3fab52844945
Publikováno v:
npj Computational Materials, Vol 8, Iss 1, Pp 1-6 (2022)
Abstract Fluorescent centres in silicon have recently attracted great interest, owing to their remarkable properties for quantum technology. Here, we demonstrate that the C-centre in silicon can realise an optically readable quantum register in the L
Externí odkaz:
https://doaj.org/article/9fd08e5687eb42eaa60167bd792d15e1
Publikováno v:
npj Quantum Information, Vol 7, Iss 1, Pp 1-5 (2021)
Abstract Defect quantum bits (qubits) constitute an important emerging technology. However, it is necessary to explore new types of defects to enable large-scale applications. In this article, we examine the potential of magnesium-vacancy (MgV) in di
Externí odkaz:
https://doaj.org/article/1e6711d3cd9441e1962b21706eb5a184
Autor:
Anton Pershin, David Hall, Vincent Lemaur, Juan-Carlos Sancho-Garcia, Luca Muccioli, Eli Zysman-Colman, David Beljonne, Yoann Olivier
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-5 (2019)
Thermally activated delayed fluorescence is a mechanism for enhancing the efficiency of organic light emitting diodes by harvesting triplet excitons, but there is still a need to design more efficient materials. Here, the authors rationally design an
Externí odkaz:
https://doaj.org/article/3b9146bba2db487caca83116e8bd5508
Autor:
Jeffrey Neethi Neethirajan, Toni Hache, Domenico Paone, Dinesh Pinto, Andrej Denisenko, Rainer Stöhr, Péter Udvarhelyi, Anton Pershin, Adam Gali, Joerg Wrachtrup, Klaus Kern, Aparajita Singha
Publikováno v:
Nano Letters. 23:2563-2569
Publikováno v:
ACS Applied Electronic Materials. 5:1660-1669
Autor:
Fabian A. Freire-Moschovitis, Roberto Rizzato, Anton Pershin, Moritz R. Schepp, Robin D. Allert, Lina M. Todenhagen, Martin S. Brandt, Adam Gali, Dominik B. Bucher
Publikováno v:
ACS Nano.
Quantum sensing with spin defects in diamond, such as the nitrogen-vacancy (NV) center, enables the detection of various chemical species on the nanoscale. Molecules or ions with unpaired electronic spins are typically probed by their influence on th
Autor:
David Hall, Juan Carlos Sancho-García, Anton Pershin, David Beljonne, Eli Zysman-Colman, Yoann Olivier
The importance of intermediate triplet states and the nature of excited states has gained interest in recent years for the thermally activated delayed fluorescence (TADF) mechanism. It is widely accepted that simple conversion between charge transfer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::249983ba3859c23cc258c000c2c5c103
https://hdl.handle.net/10045/134882
https://hdl.handle.net/10045/134882