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pro vyhledávání: '"Anton Mihailovich Shorin"'
Publikováno v:
IEEE Transactions on Power Electronics. 33:6211-6216
Modulation method and the device for thermal impedance measuring of power mosfet s and IGBT transistors, and measurement results are described. The measurements were performed by generic modulation method that implies heating a device under test by p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e789f56747b199d97730ad26bf16ba1
https://doi.org/10.1109/tpel.2017.2740961
https://doi.org/10.1109/tpel.2017.2740961
