Zobrazeno 1 - 10
of 206
pro vyhledávání: '"Anton J. Bauer"'
Publikováno v:
Materials Science Forum. 1004:1123-1128
In this work, the impact of channel implantations (IMP) on the electrical characteristics of SiC n-and p-MOSFETs and analog SiC-CMOS operational amplifiers (OpAmp) is investigated. For this purpose, MOSFETs and Miller OpAmps with and without IMP were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11768dc4abd19c1f570cb915adb9a24c
https://doi.org/10.4028/www.scientific.net/msf.1004.1123
https://doi.org/10.4028/www.scientific.net/msf.1004.1123
Publikováno v:
Materials Science Forum. 1004:718-724
In this work, pulsed-laser-based tempering was applied for post-implant annealing of n-type N-doped 4H-SiC in order to electrically activate the dopants and to rebuild the crystal structure. The annealing was performed by a frequency-tripled Nd:YVO4l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::613e92435bad56889469794df05ac819
https://doi.org/10.4028/www.scientific.net/msf.1004.718
https://doi.org/10.4028/www.scientific.net/msf.1004.718
Autor:
Anton J. Bauer, Min Who Lim, Hoon Kyu Shin, Mathias Rommel, Hong-Ki Kim, Tomasz Sledziewski, Tobias Erlbacher, Seongjun Kim
Publikováno v:
Materials Science Forum. 1004:535-540
In this work, the influence of pre-deposition interfacial oxidation or post-deposition interface nitridation on the performance of 4H-SiC MOS capacitors was investigated. The gate oxide was deposited by LPCVD using TEOS as a precursor. Interface brea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a55c516549f2b48ef0a1a977f85f4567
https://doi.org/10.4028/www.scientific.net/msf.1004.535
https://doi.org/10.4028/www.scientific.net/msf.1004.535
Autor:
Holger Schlichting, Tobias Erlbacher, Matthias Kocher, Mathias Rommel, Birgit Kallinger, Anton J. Bauer
Publikováno v:
Materials Science Forum. 1004:299-305
In this study, UV Photoluminescence (UVPL) and Differential Interference Contrast (DIC) mapping was applied for process control of a 1.2 kV 4H-SiC VDMOS fabrication process at different process stages in order to investigate the influence of shallow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e016228840a44defdbd694bc8cf1ae25
https://doi.org/10.4028/www.scientific.net/msf.1004.299
https://doi.org/10.4028/www.scientific.net/msf.1004.299
Autor:
Min-Sik Kang, Seongjun Kim, Anton J. Bauer, Hyun-Chul Kim, Tobias Erlbacher, Min-Jae Kang, Tran Viet Cuong, Nam-Suk Lee, Hong-Ki Kim, Hoon-Kyu Shin, Seonghoon Jeong, Minwho Lim
Publikováno v:
Journal of Nanomaterials, Vol 2019 (2019)
In this work, the ohmic contact mechanism of Ni electrodes on C-faced 4H-n-SiC was investigated by evaluating the electrical and microstructural properties in the contact interface as a function of annealing temperatures ranging from 950 to 1100°C.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e758119b6971ab5cdecacfa594a4777
https://doi.org/10.1155/2019/5231983
https://doi.org/10.1155/2019/5231983
Autor:
Julietta Weisse, Matthias Kocher, Anton J. Bauer, Zongwei Xu, Tobias Erlbacher, Mathias Rommel, B.T. Yao
Publikováno v:
Materials Science Forum. 963:445-448
The prediction of the compensation induced hole concentration reduction in implanted Al regions is a key parameter in developing high power SiC devices. Hall effect measurements are commonly used to determine the compensation ratio of Al implanted re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::97b8dd93a2da522484e170fa9ef02227
https://doi.org/10.4028/www.scientific.net/msf.963.445
https://doi.org/10.4028/www.scientific.net/msf.963.445
Publikováno v:
Materials Science Forum. 963:827-831
In this work, the impact of a shallow aluminum channel implantation on the channel properties of SiC p-MOSFETs and digital SiC CMOS devices is investigated. For this purpose, p-MOSFETs, CMOS inverters and ring oscillators with different channel impla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c734692b89ab3cebaeda14029246ee2
https://doi.org/10.4028/www.scientific.net/msf.963.827
https://doi.org/10.4028/www.scientific.net/msf.963.827
Publikováno v:
Materials Science Forum. 963:763-767
Production yield is a major factor for semiconductor device manufacturing. To produce high performance devices cost efficiently, it is important to know the process windows of the implemented production technology. This can influence the yield in dif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19f693b14a26eb4b10fd84b8b3f5790c
https://doi.org/10.4028/www.scientific.net/msf.963.763
https://doi.org/10.4028/www.scientific.net/msf.963.763
Autor:
Anton J. Bauer, Tobias Erlbacher, Seongjun Kim, Jonas Buettner, Nam-Suk Lee, Min Who Lim, Sang Mo Koo, Hoon Kyu Shin, Hong-Ki Kim
Publikováno v:
Materials Science Forum. 963:429-432
In this study, Al and N implantation effect on surface properties of 4H-SiC epitaxial layers were investigated before annealing process. AFM results indicated that all implanted samples indicated relatively low RMS roughness values. From UPS and XPS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ab0771b526419b36aa1aff017c85869
https://doi.org/10.4028/www.scientific.net/msf.963.429
https://doi.org/10.4028/www.scientific.net/msf.963.429
Autor:
Gian Domenico Licciardo, Tobias Erlbacher, Alfredo Rubino, Anton J. Bauer, Luigi Di Benedetto, Lothar Frey, Christian D. Matthus
Publikováno v:
Materials Science Forum. 963:572-575
In this paper we report on the performance of 4H-SiC bipolar diodes as temperature sensors far beyond 273K. The sensor is measured from 150K to 445K covering a temperature range of 295K. In this operating temperature range, the sensor characteristic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eaf40329ac3bf0b955500acd714b68a0
https://doi.org/10.4028/www.scientific.net/msf.963.572
https://doi.org/10.4028/www.scientific.net/msf.963.572