Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Antoine Reverdy"'
Publikováno v:
Microelectronics Reliability. :267-272
This work presents a Failure Analysis case study related to a scan chain integrity issue. By using Laser Voltage Imaging and Probing (LVx) approaches, we have been able to localize a defect that was inducing a transition failure, detected during scan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c93d963dba8eed74610a9fc28902f875
https://doi.org/10.1016/j.microrel.2018.07.073
https://doi.org/10.1016/j.microrel.2018.07.073
Publikováno v:
International Symposium for Testing and Failure Analysis.
This paper describes a novel flow using analog simulations for the failure analysis of digital, analog, and mixed signal devices. Although cell level diagnosis tools are available in the industry, it presents a solution through analog intra-cell simu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::856554baf65410d9daf4ff7edddf27c2
https://doi.org/10.31399/asm.cp.istfa2018p0183
https://doi.org/10.31399/asm.cp.istfa2018p0183
Autor:
Martin Igarashi, Allesandra Fudoli, Jesse Alton, V. Goubier, G. Gibbons, Morgan Cason, Antoine Reverdy, Alberto Pagani, M. Marchetti
Publikováno v:
Microelectronics Reliability. 54:2075-2080
Localizing defects (particularly, dead open and resistive open defects) at package level is becoming a critical challenge for Failure Analysis Laboratories due to package miniaturisation and increased complexity. One of the well-known approaches to a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a18aaf0003e0ee2054102f0aa3c047f
https://doi.org/10.1016/j.microrel.2014.07.036
https://doi.org/10.1016/j.microrel.2014.07.036
Autor:
Guillaume Celi, Sylvain Dudit, Thierry Parrassin, Emmanuel Bechet, Antoine Reverdy, Philippe Perdu, Michel Vallet, Dean Lewis
Publikováno v:
Microelectronics Reliability. 50:1499-1505
For very deep submicron technologies, 45 nm and less, bridge defects are getting more and more complex and critical. In order to find the exact root cause, accurate defect localization, precise understanding on the nature of the defect and its impact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::229374104bd328b8fb4d281cdb9e1c33
https://doi.org/10.1016/j.microrel.2010.07.115
https://doi.org/10.1016/j.microrel.2010.07.115
Publikováno v:
Microelectronics Reliability. 48:1689-1695
Thermal laser stimulation on sub-Micronics interconnection structures is well known. The usual approach is to consider them as a resistor, whatever the structure is. We experimentally showed the weaknesses of this assumption which has to be reconside
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3b74e58b1d58a412328c40940d243fa
https://doi.org/10.1016/j.microrel.2008.05.003
https://doi.org/10.1016/j.microrel.2008.05.003
Publikováno v:
Microelectronics Reliability. 48:1279-1284
Thermal time constant analysis (TTC) opens a wide range of applications: structure identification, 3D localization for very deep micron technologies. In this paper, we describe a new analysis methodology for TTC signatures induced by modulated therma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16ef737ccbc299f27bedf9ee017ac03f
https://doi.org/10.1016/j.microrel.2008.07.045
https://doi.org/10.1016/j.microrel.2008.07.045
Publikováno v:
International Symposium for Testing and Failure Analysis.
By adding a transmission grating into the optical path of our photon emission system and after calibration, we have completed several failure analysis case studies. In some cases, additional information on the emission sites is provided, as well as u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4b40109d268b5e27a0349747ee36635
https://doi.org/10.31399/asm.cp.istfa2014p0115
https://doi.org/10.31399/asm.cp.istfa2014p0115
Laser Voltage Imaging and Its Derivatives—Efficient Techniques to Address Defect on 28 nm Technology
Autor:
Sylvain Dudit, Guillaume Celi, Michel Vallet, Dean Lewis, Philippe Perdu, Thierry Parrassin, Antoine Reverdy
Publikováno v:
International Symposium for Testing and Failure Analysis.
The Laser Voltage Imaging (LVI) technique, introduced in 2007 [1][2], has been demonstrated as a successful defect localization technique to address problems on advanced technologies. In this paper, several 28nm case studies are described on which th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1ff61b7e87074aeb2b8a3c3b83a559d
https://doi.org/10.31399/asm.cp.istfa2013p0306
https://doi.org/10.31399/asm.cp.istfa2013p0306
Publikováno v:
International Symposium for Testing and Failure Analysis.
In semiconductor industries, development of new technologies and new products generally follows a phase of yield improvement where Failure Analysis expertise is used to locate and fix killer defects and for design debug. When process and design reach
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9498eab6d9d5d742a327da9516f36869
https://doi.org/10.31399/asm.cp.istfa2012p0232
https://doi.org/10.31399/asm.cp.istfa2012p0232
Autor:
Antoine Reverdy, Sylvain Dudit, Michel Vallet, Philippe Perdu, Dean Lewis, Guillaume Celi, Thierry Parrassin
Publikováno v:
International Symposium for Testing and Failure Analysis.
The Laser Voltage Imaging (LVI) technique [1], introduced in 2009, appears as a very promising approach for Failure Analysis application which allows mapping frequencies through the backside of integrated circuits. In this paper, we propose a new ran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b20d618967791d4351281c79fa05d096
https://doi.org/10.31399/asm.cp.istfa2012p0176
https://doi.org/10.31399/asm.cp.istfa2012p0176