Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Antoine Litty"'
Publikováno v:
Solid-State Electronics
Solid-State Electronics, Elsevier, 2016, 125, pp.133-141. ⟨10.1016/j.sse.2016.07.013⟩
Solid-State Electronics, Elsevier, 2016, 125, pp.133-141. ⟨10.1016/j.sse.2016.07.013⟩
International audience; The development of high-voltage MOSFET (HVMOS) is necessary for including power management or radiofrequency functionalities in CMOS technology. In this paper, we investigate the fabrication and optimization of an Extended Dra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3e5343eb389ec4fc532cff10ae48f5f
https://hal.archives-ouvertes.fr/hal-02003158
https://hal.archives-ouvertes.fr/hal-02003158
Autor:
Antoine Litty, Alexandres Dartigues, Dominique Golanski, Christian Dutto, Sorin Cristoloveanu, Sylvie Ortolland
Publikováno v:
International Journal of High Speed Electronics and Systems
International Journal of High Speed Electronics and Systems, World Scientific Publishing, 2016, 25 (1&2), pp.1640005. ⟨10.1142/S012915641640005X⟩
9th Workshop on Frontiers in Electronics 2015 (WOFE-15)
9th Workshop on Frontiers in Electronics 2015 (WOFE-15), Dec 2015, San Juan, Puerto Rico. ⟨10.1142/9789813220829_0005⟩
International Journal of High Speed Electronics and Systems, World Scientific Publishing, 2016, 25 (1&2), pp.1640005. ⟨10.1142/S012915641640005X⟩
9th Workshop on Frontiers in Electronics 2015 (WOFE-15)
9th Workshop on Frontiers in Electronics 2015 (WOFE-15), Dec 2015, San Juan, Puerto Rico. ⟨10.1142/9789813220829_0005⟩
High-Voltage MOSFETs are essential devices for complementing and extending the domains of application of any core technology including low-power, low-voltage CMOS. In this paper, we propose and describe advanced Extended-Drain MOSFETs, designed, proc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ffc81b29f5902f83a065633fc54b0b88
https://hal.archives-ouvertes.fr/hal-02008114
https://hal.archives-ouvertes.fr/hal-02008114
Publikováno v:
Solid-State Electronics
Solid-State Electronics, Elsevier, 2015, 113, pp.42-48. ⟨10.1016/j.sse.2015.05.011⟩
Solid-State Electronics, Elsevier, 2015, 113, pp.42-48. ⟨10.1016/j.sse.2015.05.011⟩
A promising high-voltage MOSFET (HVMOS) is experimentally demonstrated in 28 nm Ultra-Thin Body and Buried oxide Fully Depleted SOI technology (UTBB–FDSOI). The Dual Ground Plane Extended-Drain MOSFET (DGP EDMOS) architecture uses the back-gate bia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6287d2534f068a6d4cc85e02f2e3b829
https://hal.archives-ouvertes.fr/hal-02003105
https://hal.archives-ouvertes.fr/hal-02003105
Publikováno v:
2015 ESSDERC Proceedings
2015 ESSDERC-45th European Solid-State Device Research Conference
2015 ESSDERC-45th European Solid-State Device Research Conference, Sep 2015, Graz, Austria. pp.134-137, ⟨10.1109/ESSDERC.2015.7324731⟩
ESSDERC
2015 ESSDERC-45th European Solid-State Device Research Conference
2015 ESSDERC-45th European Solid-State Device Research Conference, Sep 2015, Graz, Austria. pp.134-137, ⟨10.1109/ESSDERC.2015.7324731⟩
ESSDERC
session A7L-F: Innovation Approaches for Opto and Power Devices; International audience; We have already demonstrated the fabrication of a Dual-Ground Plane Extended Drain MOSFET with 28nm FDSOI technology. The detrimental consequences of ultrathin S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b29cc22a44edcf3ed9b9d25fed1c805
https://hal.archives-ouvertes.fr/hal-02004187
https://hal.archives-ouvertes.fr/hal-02004187
Publikováno v:
2015 ISPSD Proceedings
2015 27th IEEE International Symposium on Power Semiconductor Devices & IC's (ISPSD)
2015 27th IEEE International Symposium on Power Semiconductor Devices & IC's (ISPSD), May 2015, Hong Kong, China. pp.73-76, ⟨10.1109/ISPSD.2015.7123392⟩
2015 27th IEEE International Symposium on Power Semiconductor Devices & IC's (ISPSD)
2015 27th IEEE International Symposium on Power Semiconductor Devices & IC's (ISPSD), May 2015, Hong Kong, China. pp.73-76, ⟨10.1109/ISPSD.2015.7123392⟩
We investigate a promising high-voltage MOSFET (HVMOS) fabricated in the leading edge 14nm Fully-Depleted Silicon-On-Insulator technology (FDSOI). We focus on a variant of the Extended-Drain MOSFET (EDMOS) on SOI which features Ultra-Thin Body and Bu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f1e6f1267270101eb8f22de02c836889
https://doi.org/10.1109/ispsd.2015.7123392
https://doi.org/10.1109/ispsd.2015.7123392
Publikováno v:
2014 ESSDERC Proceedings
2014 ESSDERC-44th European Solid-State Device Research Conference
2014 ESSDERC-44th European Solid-State Device Research Conference, Sep 2014, Venice, Italy. pp.134-137, ⟨10.1109/ESSDERC.2014.6948776⟩
ESSDERC
2014 ESSDERC-44th European Solid-State Device Research Conference
2014 ESSDERC-44th European Solid-State Device Research Conference, Sep 2014, Venice, Italy. pp.134-137, ⟨10.1109/ESSDERC.2014.6948776⟩
ESSDERC
session A7L-G: Avanced Devices from Si to Wide-Bandgap; International audience; A promising high-voltage MOSFET (HVMOS) in Ultra-Thin Body and Buried oxide Fully Depleted SOI technology (UTBB-FDSOI) is experimentally demonstrated. The Dual Ground Pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6246008e6929f1431b39058aeff83490
https://hal.archives-ouvertes.fr/hal-02003875
https://hal.archives-ouvertes.fr/hal-02003875
Publikováno v:
2014 EUROSOI Proceedings
Solid-State Electronics
Solid-State Electronics, Elsevier, 2015, 112, pp.7-12. ⟨10.1016/j.sse.2015.02.013⟩
Solid-State Electronics
Solid-State Electronics, Elsevier, 2015, 112, pp.7-12. ⟨10.1016/j.sse.2015.02.013⟩
International audience; For the first time, the investigation and fabrication of a high-voltage MOSFET (HVMOS) in Ultra-Thin Body and Buried oxide Fully Depleted technology (UTBB-FDSOI) is reported. Through TCAD simulations, the lateral electric fiel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c55f786038bbf1b6acb4dbdba6a6253
https://hal.archives-ouvertes.fr/hal-02008239
https://hal.archives-ouvertes.fr/hal-02008239
Autor:
Helene Beckrich Ros, Dominique Golanski, Sorin Cristoloveanu, Antoine Litty, Sylvie Ortolland
Publikováno v:
ICICDT 2013 (International Conference on IC Design and Technology
ICICDT 2013 (International Conference on IC Design and Technology, May 2013, Pavia, Italy. pp.25-28, ⟨10.1109/ICICDT.2013.6563295⟩
ICICDT
ICICDT 2013 (International Conference on IC Design and Technology, May 2013, Pavia, Italy. pp.25-28, ⟨10.1109/ICICDT.2013.6563295⟩
ICICDT
Based on systematic measurements in CMOS 40 nm bulk technology, we propose a new model for isolated Extended-Drain MOS (EDMOS) transistor. Our custom Spice macro-model includes main specific effects in high-voltage devices. In particular, the model a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b3a10ac1e003529ef0735ee34f7ee28
https://hal.archives-ouvertes.fr/hal-01022607
https://hal.archives-ouvertes.fr/hal-01022607