Výsledky vyhledávání - "Antoine Létoublon"

Akademický článek

Study of MoS2 Deposited by ALD on c-Si, Towards the Development of MoS2/c-Si Heterojunction Photovoltaics

Autor: Bienlo Flora Zerbo, Mircea Modreanu, Ian Povey, Jun Lin, Antoine Létoublon, Alain Rolland, Laurent Pédesseau, Jacky Even, Bruno Lépine, Pascal Turban, Philippe Schieffer, Alain Moréac, Olivier Durand

Publikováno v: Crystals, Vol 12, Iss 10, p 1363 (2022)

Silicon-based heterojunction (SHJ) solar cells demonstrate high efficiencies over their homojunction counterparts, revealing the potential of such technologies. We present here the first steps towards the development of molybdenum disulfide (MoS2)/c-

Externí odkaz: https://doaj.org/article/887267700e23466da84f3d01a9d76452

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Dual bandgap operation of a GaAs/Si photoelectrode

Autor: Mekan Piriyev, Gabriel Loget, Yoan Léger, Lipin Chen, Antoine Létoublon, Tony Rohel, Christophe Levallois, Julie Le Pouliquen, Bruno Fabre, Nicolas Bertru, Charles Cornet

Publikováno v: Solar Energy Materials and Solar Cells
Solar Energy Materials and Solar Cells, 2023, 251, pp.112138. ⟨10.1016/j.solmat.2022.112138⟩

International audience; The development of high-efficiency photoelectrodes at low manufacturing cost is of great interest for the production of renewable and green hydrogen through solar-driven water splitting. In this work, we use structural, optica

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a135eda2dd9f36fca29dce4fb64b9afe
https://doi.org/10.1016/j.solmat.2022.112138

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Towards the development of MoS2/c-Si heterojunction photovoltaics

Autor: Bienlo Flora Christine Zerbo, Mircea Modreanu, Antoine Létoublon, Alain Rolland, Laurent Pedesseau, Jacky Even, Bruno Lépine, Pascal Turban, Philippe Schieffer, Alain Moréac, Olivier Durand

Publikováno v: Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XI.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5034e19b27f1716df9b0445d28b4c80a
https://doi.org/10.1117/12.2608683

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Epitaxial growth of CIGSe layers on GaP/Si(001) pseudo-substrate for tandem CIGSe/Si solar cells

Autor: Polyxeni Tsoulka, Eugène Bertin, Eric Gautron, Daniel Lincot, Nicolas Barreau, Antoine Létoublon, Olivier Durand, Charles Cornet

Publikováno v: Solar Energy Materials and Solar Cells
Solar Energy Materials and Solar Cells, Elsevier, 2021, 233, pp.111385. ⟨10.1016/j.solmat.2021.111385⟩
Solar Energy Materials and Solar Cells, 2021, 233, pp.111385. ⟨10.1016/j.solmat.2021.111385⟩

International audience; In this study, the epitaxial growth of co-evaporated Cu(In,Ga)Se2 films (CIGSe) onto GaP/Si(001) pseudo-substrates, where the GaP thin layer is epitaxially grown by Molecular Beam Epitaxy (MBE), is investigated. Extensive stru

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c33fee53601ec63b921f7c1c0a92c78
https://hal.archives-ouvertes.fr/hal-03361009

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Optical and structural characterization of thin MoS2 layers on SiO2/Si substrates, towards the development of MoS2/Si heterojunction photovoltaics

Autor: Laurent Pedesseau, Mircea Modreanu, Philippe Schieffer, Antoine Létoublon, Jacky Even, Bruno Lépine, Pascal Turban, Alain Moréac, Olivier Durand, Bienlo Zerbo, Alain Rolland, Ian M. Povey

Publikováno v: IEEE Xplore
44th International Semiconductor Conference (CAS 2021)
44th International Semiconductor Conference (CAS 2021), Oct 2021, Online, Romania. ⟨10.1109/CAS52836.2021.9604140⟩

International audience; In this paper, we present the first steps of a process toward the development of MoS2/Si heterojunctions photovoltaics, using 2D 2H-MoS2, whose natural abundance and tunable bandgap make it suitable for such application. A foc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44cdbd3a51ecb8411b7e6218131982fb
https://hal.science/hal-03796793

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CIGS growth on a GaP/Si(001) platform: towards CIGS/Si tandem solar cells

Autor: Eric Gautron, Nicolas Barreau, Amelle Rebai, Jackson Lontchi, Antoine Létoublon, Alexandre Crossay, Eugène Bertin, Charles Cornet, Daniel Lincot, Olivier Durand

Publikováno v: Proc. SPIE
SPIE Photonics West-OPTO 2021
SPIE Photonics West-OPTO 2021, Mar 2021, Online Only, United States. pp.1168721, ⟨10.1117/12.2591986⟩

International audience; We propose to explore tandem junctions associating single crystalline silicon bottom cell (Eg = 1.12 eV) and wide bandgap (1.7 eV) CIGS top cell, using GaP intermediate layer. Our purpose is to grow CIGS films under epitaxial

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cfa4103bc6e61f0ee4e5b08841ea327e
https://hal.science/hal-03392186

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Assessment of GaPSb/Si tandem material association properties for photoelectrochemical cells

Autor: Lipin Chen, Rozenn Bernard, Charles Cornet, Soline Boyer-Richard, Yoan Léger, Tony Rohel, Christophe Levallois, Jean-Marc Jancu, Nicolas Bertru, Jiang Wu, Julie Stervinou, Antoine Létoublon, Mahdi Alqahtani, Ivan P. Parkin, Rozenn Piron

Publikováno v: Solar Energy Materials and Solar Cells
Solar Energy Materials and Solar Cells, Elsevier, 2021, 221, pp.110888. ⟨10.1016/j.solmat.2020.110888⟩
Solar Energy Materials and Solar Cells, 2021, 221, pp.110888. ⟨10.1016/j.solmat.2020.110888⟩

International audience; Here, the structural, electronic and optical properties of the GaP 1-x Sb x /Si tandem materials association are determined in view of its use for solar water splitting applications. The GaPSb crystalline layer is grown on Si

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::048efb92fe2b38272454a6d503c4377a
https://hal.archives-ouvertes.fr/hal-03031939

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Strong Electron–Phonon Interaction in 2D Vertical Homovalent III–V Singularities

Autor: Christophe Levallois, Jacky Even, Nicolas Bertru, Antoine Létoublon, Rozenn Piron, Alain Moréac, Olivier Durand, Lipin Chen, Thomas Schroeder, Mathieu Perrin, Rozenn Bernard, Yoan Léger, Charles Cornet, Julie Stervinou, Markus Andreas Schubert, Oliver Skibitzki, Laurent Pedesseau

Publikováno v: ACS Nano
ACS Nano, 2020, 14 (10), pp.13127-13136. ⟨10.1021/acsnano.0c04702⟩
ACS Nano, American Chemical Society, 2020, 14 (10), pp.13127-13136. ⟨10.1021/acsnano.0c04702⟩

International audience; Highly polar materials are usually preferred over weakly polar ones to study strong electron–phonon interactions and its fascinating properties. Here, we report on the achievement of simultaneous confinement of charge carrie

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::04d461da13cd80bd9f5edde01b7bd2bc
https://hal.science/hal-03032030

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Zinc-blende group III-V/group IV epitaxy: Importance of the miscut

Autor: Simon Charbonnier, Gilles Patriarche, Mounib Bahri, Antoine Létoublon, Eric Tournié, Anne Ponchet, Tony Rohel, Angela Alvarez, Laurent Cerutti, Nicolas Bertru, Lipin Chen, Pascal Turban, Ida Lucci, Yoan Léger, Rozenn Bernard, Charles Cornet, Karine Tavernier, Jean-Baptiste Rodriguez, Ludovic Largeau

Publikováno v: Physical Review Materials
Physical Review Materials, 2020, 4 (5), pp.053401. ⟨10.1103/PhysRevMaterials.4.053401⟩
Physical Review Materials, American Physical Society, 2020, 4 (5), pp.053401. ⟨10.1103/PhysRevMaterials.4.053401⟩

International audience; Here we clarify the central role of the miscut during group III-V/group IV crystal growth. We show that the miscut impacts the initial antiphase domain distribution, with two distinct nucleation-driven (miscut typically >1°)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc0520e96bd2efcbf7c85b1691d455f2
https://hal.science/hal-02878985/document

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