Zobrazeno 1 - 10
of 68
pro vyhledávání: '"Antoine Brimont"'
Autor:
Konstantinos Papatryfonos, Todora Angelova, Antoine Brimont, Barry Reid, Stefan Guldin, Peter Raymond Smith, Mingchu Tang, Keshuang Li, Alwyn J. Seeds, Huiyun Liu, David R. Selviah
Publikováno v:
AIP Advances, Vol 11, Iss 2, Pp 025327-025327-10 (2021)
A series of AlxGa(1−x)As ternary alloys were grown by molecular beam epitaxy (MBE) at the technologically relevant composition range, x < 0.45, and characterized using spectroscopic ellipsometry to provide accurate refractive index values in the wa
Externí odkaz:
https://doaj.org/article/4302ce65de9147b58ba1f8d188b2949e
Autor:
Konstantinos Papatryfonos, David R. Selviah, Avi Maman, Kobi Hasharoni, Antoine Brimont, Andrea Zanzi, Jochen Kraft, Victor Sidorov, Marc Seifried, Yannick Baumgartner, Folkert Horst, Bert Jan Offrein, Katarzyna Lawniczuk, Ronald G. Broeke, Nikos Terzenidis, George Mourgias-Alexandris, Mingchu Tang, Alwyn J. Seeds, Huiyun Liu, Pablo Sanchis, Miltiadis Moralis-Pegios, Thanasis Manolis, Nikos Pleros, Konstantinos Vyrsokinos, Bogdan Sirbu, Yann Eichhammer, Hermann Oppermann, Tolga Tekin
Publikováno v:
Applied Sciences, Vol 11, Iss 13, p 6098 (2021)
We report recent advances in photonic–electronic integration developed in the European research project L3MATRIX. The aim of the project was to demonstrate the basic building blocks of a co-packaged optical system. Two-dimensional silicon photonics
Externí odkaz:
https://doaj.org/article/1c46f3b4a51c43c5a902a66e3b5fc500
Autor:
Antoine Brimont, Ana M. Gutierrez, Mariam Aamer, David J. Thomson, Frederic Y. Gardes, Jean-Marc Fedeli, Graham T. Reed, Javier Marti, Pablo Sanchis
Publikováno v:
IEEE Photonics Journal, Vol 4, Iss 5, Pp 1306-1315 (2012)
The integration of nanophotonics components with advanced complementary metal-oxide-semiconductor (CMOS) electronics requires drive voltages as low as 1 V for enabling next-generation CMOS electrophotonics transceivers. Slow-light propagation has bee
Externí odkaz:
https://doaj.org/article/8f1123135e1d4fa3b579e810030e8f88
Publikováno v:
RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
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[EN] Switches are essential components in several optical applications, in which reduced footprints are highly desirable for mass production of densely integrated circuits at low cost. However, most conventional solutions rely on making long switchin
Autor:
M. Aamer, Ariane Jacquemin, Anton Stroganov, Davide Sacchetto, Antoine Brimont, Michael Geiselmann, Tatiana Buriakova, Fingal Persoud
Publikováno v:
OSA Advanced Photonics Congress 2021.
We report a simple implementation of integrated polarization rotator for thick-film SiN platform for S-/C-/L- bands operation. The fabricated devices show high polarization conversion efficiency above 90% and broadband operation.
Autor:
Pablo Sanchis, Christos Vagionas, M. Moralis Pegios, Konstantinos Vyrsokinos, Victor Sidorov, Bogdan Sirbu, Andrea Zanzi, Jochen Kraft, Nikos Pleros, Tolga Tekin, Antoine Brimont
Publikováno v:
ICTON
In this paper, we summarize the latest results on silicon electro-optical (E/O) modulators in the framework of the European project L3MATRIX. The (E/O) devices were fabricated in a $0.350\mu \mathrm{m}$ CMOS commercial production foundry (AMS AG) wit
Autor:
Tolga Tekin, Alvaro Rosa, Pablo Sanchis, Victor Sidorov, Bogdan Sirbu, Nikos Pleros, Konstantinos Vyrsokinos, S. Lechago, Andrea Zanzi, Amadeu Griol, Antoine Brimont, Miltiadis Moralis-Pegios, Christos Vagionas, Jochen Kraft
Publikováno v:
Optics express. 27(22)
In this paper, we present the design, fabrication and characterization of a carrier depletion silicon-photonic switch based on a highly doped vertical pn junction. The vertical nature of the pn junction enables the device to exhibit a modulation effi
Publikováno v:
2019 IEEE 16th International Conference on Group IV Photonics (GFP).
A 9.9-μm-long non-volatile silicon electro-optic switch is proposed based on the utilization of indium tin oxide (ITO) as a floating gate and by exploiting the ITO epsilon-near-zero (ENZ) regime in the telecom C-band.
Autor:
Pablo Sanchis, Elena Pinilla-Cienfuegos, Roger Sanchis-Gual, Irene Olivares, Jorge O. Parra, Antoine Brimont, Ramón Torres-Cavanillas
Publikováno v:
ICTON
Electro-optical bistability is a functionality which can be crucial for a wide range of applications as it can enable non-volatile and ultra-low power switching performance. We investigate the integration of a molecular-based material presenting a Sp
Publikováno v:
RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
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[EN] The magnitude and origin of the electro-optic measurements in strained silicon devices has been lately the object of a great controversy. Furthermore, recent works underline the importance of the masking effect of free carriers in strained waveg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b86abe42326e4539ecc0173b466b5140
http://hdl.handle.net/10251/143330
http://hdl.handle.net/10251/143330